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SMV2022-219

Variable Capacitance Diode, 22V, Silicon, Hyperabrupt

器件类别：分立半导体    二极管   

厂商名称：Alpha Industries

厂商官网：http://www.alphaind.com

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参数 预览 参数对比
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器件：SMV2022-219

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器件参数
参数名称
属性值
包装说明
S-XUUC-N1
Reach Compliance Code
unknown
ECCN代码
EAR99
最小击穿电压
22 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
VARIABLE CAPACITANCE DIODE
JESD-30 代码
S-XUUC-N1
元件数量
1
端子数量
1
封装主体材料
UNSPECIFIED
封装形状
SQUARE
封装形式
UNCASED CHIP
最大功率耗散
0.25 W
认证状态
Not Qualified
最小质量因数
400
表面贴装
YES
端子形式
NO LEAD
端子位置
UPPER
变容二极管分类
HYPERABRUPT
文档预览
Silicon Low Capacitance
Hyperabrupt Junction Varactor Diodes
SMV2019 to SMV2023
Features
Octave Frequency Tuning from 0 to 10 Volts
Good Linearity Tuning Ratio Without
Compensation Network
Offered in Package Styles Suitable for a Wide
Range of Applications
Description
Alpha microwave hyperabrupt diodes are designed
for wideband tuning of microwave filters, resonators,
and local oscillators. Linear tuning, not possible with
conventional abrupt–junction tuning diodes, is
accomplished by maintaining an accurate silicon
doping profile using ion–implantation precision
control techniques.
This series of hyperabrupt diodes offer wide
bandwidth tuning with low bias voltage. For example,
a 22 volt hyperabrupt diode can provide the same
tuning variation as a 90 volt abrupt–junction diode.
When capacitance and tuning ratio values are equal,
a hyperabrupt diode will have a Q (measured at –4
volts, 50 MHz) approximately 1/2 to 1/3 that of an
abrupt–junction diode.
Maximum Ratings
Reverse Voltage, V
R
:
Forward Current, I
F
:
Power Dissipation at 25°C:
Operating Temperature:
Storage Temperature:
22V
100 mA
250 mW
–55 to 150°C
–65 to 200°C
These diodes are available in many Alpha ceramic
packages. They can be supplied in chip form or
mounted on a variety of packages. All chips are
passivated with silicon dioxide for reliability and low
leakage current.
The specifications table indicates chip capacitance
measured at 1 MHz. For packaged varactors add
appropriate package capacitance, e.g., 0.22 pF for
package 210, to obtain total capacitance.
Electrical Specifications at 25°C
Square Passivated Silicon Chips
Part
Number
"
SMV2019–000
SMV2020–000
SMV2021–000
SMV2022–000
"
SMV2023–000
V
B
@ 10
µA
(V)
Min.
22
22
22
22
22
I
R
@ 17.6V
(nA)
Max.
50
50
50
50
50
Min.
0.68
1.13
1.58
2.48
4.28
C
J
@ 4V
(pF)
Max.
0.88
1.43
1.98
3.08
5.28
Min.
0.13
0.23
0.32
0.48
0.78
C
J
@ 20V
(pF)
Max.
0.23
0.33
0.44
0.68
1.08
Q
@ 4V
50 MHz
Min.
500
500
500
400
400
Chip
Outline
Number
N mber
149–801
149–801
149–801
149–801
149–801
"
Available through distribution.
2–10
Alpha Industries
•
[617] 935 5150
•
Fax
[617] 824 4579
•
E-mail
sales@alphaind.com
•
Visit our web site:
www.alphaind.com
Silicon Low Capacitance Hyperabrupt Junction Varactor Diodes
SMV2019 to SMV2023
Ordering Information
The following packages are also available. To order
part in a different package just replace the dash
number with a package style listed below. For
example, SMV2019–000 becomes SMV2019–210.
Available Package Outlines:
202, 203, 204, 210,
219, 230, 240
Refer to the Outline Drawings section in this catalog
for the total selection of outline (package)
dimensions.
2
202
203
204
210
219
230
240
Outline Dimensions
149–801
Alpha Industries
•
[617] 935 5150
•
Fax
[617] 824 4579
•
E-mail
sales@alphaind.com
•
Visit our web site:
www.alphaind.com
2–11
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参数对比
与SMV2022-219相近的元器件有：SMV2019-219、SMV2022-230、SMV2023-230、SMV2019-240、SMV2019-230、SMV2021-230、SMV2023-240、SMV2022-210。描述及对比如下：
型号 SMV2022-219 SMV2019-219 SMV2022-230 SMV2023-230 SMV2019-240 SMV2019-230 SMV2021-230 SMV2023-240 SMV2022-210
描述 Variable Capacitance Diode, 22V, Silicon, Hyperabrupt Variable Capacitance Diode, 22V, Silicon, Hyperabrupt Variable Capacitance Diode, 22V, Silicon, Hyperabrupt Variable Capacitance Diode, 22V, Silicon, Hyperabrupt Variable Capacitance Diode, 22V, Silicon, Hyperabrupt Variable Capacitance Diode, 22V, Silicon, Hyperabrupt Variable Capacitance Diode, 22V, Silicon, Hyperabrupt Variable Capacitance Diode, 22V, Silicon, Hyperabrupt Variable Capacitance Diode, 22V, Silicon, Hyperabrupt
包装说明 S-XUUC-N1 S-XUUC-N1 O-CRDB-F2 O-CRDB-F2 S-CDMW-F2 O-CRDB-F2 O-CRDB-F2 S-CDMW-F2 O-CEMW-N2
Reach Compliance Code unknown unknow unknow unknow unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最小击穿电压 22 V 22 V 22 V 22 V 22 V 22 V 22 V 22 V 22 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 代码 S-XUUC-N1 S-XUUC-N1 O-CRDB-F2 O-CRDB-F2 S-CDMW-F2 O-CRDB-F2 O-CRDB-F2 S-CDMW-F2 O-CEMW-N2
元件数量 1 1 1 1 1 1 1 1 1
端子数量 1 1 2 2 2 2 2 2 2
封装主体材料 UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 SQUARE SQUARE ROUND ROUND SQUARE ROUND ROUND SQUARE ROUND
封装形式 UNCASED CHIP UNCASED CHIP DISK BUTTON DISK BUTTON MICROWAVE DISK BUTTON DISK BUTTON MICROWAVE MICROWAVE
最大功率耗散 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最小质量因数 400 500 400 400 500 500 500 400 400
表面贴装 YES YES YES YES YES YES YES YES YES
端子形式 NO LEAD NO LEAD FLAT FLAT FLAT FLAT FLAT FLAT NO LEAD
端子位置 UPPER UPPER RADIAL RADIAL DUAL RADIAL RADIAL DUAL END
变容二极管分类 HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT
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器件捷径:
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