Microwave Motion Sensor
Description
The KMY 10 is a microwave rader motion sensor based
on the Doppler effect. It transmits a low energy
microwave radiation at 9.35 GHz which is reflected by
objects. If the object is moving relative to the sensor, a
Doppler shift occurs. The shifted wave is mixed with the
original wave, resulting in an output voltage.
Features
•
•
•
•
•
•
High sensitivity
Low power consumption
High reliability
Small size
Light weight
Low cost
Marking
KMY 10
(or SMX-1
1)
)
Ordering
Code
License No.
Special Package
KMY 10
Typ
KMY 10
Q62702-R309 Germany:
Switzerland:
Austria:
BZT B129549H
BAKOM 92.1340.H.P
GZ 104 091-ZB/96
1) Previous type designation SMX-1.
Pin Configuration
1
2
3
−
V
S
(GND)
V
D
(output voltage)
+
V
S
5V
Voltage Regulator
-
o/p
+
Notes:
1. The adjustment screw located on the top
EHA07119
Dual OP-Amp
1 2 3
face of the sensor housing is used to set
the oscillator frequency. This adjustment
is made and secured during production and to ensure the correct operation of the device it
must not be
tampered
with!
2. Only the pads marked 1; 2; 3, are predetermined solder pads and only these pads should be used to connect
the device. Soldering or otherwise interfering with any other parts of the AF-circuit board will immediately
invalidate any warranty on the device!
3. The KMY 10 is classified as an Electrostatic Discharge Sensitive Device.
Handling precautions for such devices must be adhered to!
4.
Regulations on the use of High frequency devices.
The use of high frequency devices is regulated in most countries and certain frequencies can be subject to
restrictions. The use of the KMY 10 should be clarified with the respective authorities in each country to ensure
compliance with the prevalent legislation.
Data Sheet
1
1999-04-01
KMY 10
Maximum Ratings
Parameter
Supply voltage
Symbol
Value
15
5
– 20 … + 60
– 50 … + 125
Unit
V
mA
°C
°C
V
IN
Output current
I
OUT
Operating temperature range
T
A
Storage temperature range
T
stg
Electrical Characteristics
at
T
A
= 25
°C
and
V
IN
= 12 V, unless otherwise specified.
Parameter
Supply voltage
Operating current
Power at
f
0
Frequency
Output voltage signal
DC output voltage (offset)
Output noise voltage
2)
Frequency drift vs.
temperature
3)
Symbol
min.
Limit Values
typ.
12
25
0
9.35
50
1)
2.5
10
±
6
±
0.1
920
2 - 750
4
–
+2
9.37
–
–
20
–
–
–
–
–
Hz
s
max.
15
V
mA
dBm
GHz
mV
V
mV
MHz
MHz
8
–
–
9.33
–
–
–
–
–
–
–
–
Unit
V
IN
I
IN
EIRP
1
f
0
V
out,0-peak
V
0
V
N,0-peak
d
f
T
Frequency drift vs. operating d
f
V
voltage
Preamp voltage gain
Preamp bandwidth
first detection
1) Person at 5 m distance
2) With no object detected
3) Defined over – 20
°C …
+ 60
°C
G
B
Time between power on until
t
p
Data Sheet
2
1999-04-01
KMY 10
LF-Circuit Diagram
+
V
3
+9V
100 nF
78L05
+5V
V
CC
V
CC
V
CC
+ 8
5
-
V
CC
+ 8
7
LM 358
1 MΩ
1 MΩ
3
-
B
- 4
INPUT
1 MΩ
1
33 k
Ω
+
150 pF
3.3
µF
33 k
Ω
+
3.3
µF
EHA07094
1
1
Application Example
20 k
Ω
+ 12 V
Microwave Sensor
+
V
IN
KMY 10 Outp.
GND
3
2
1
1 M
Ω
+
-
Setting of Detection Threshold (e.g.
V
= 6.5 V)
+ 12 V
10 k
Ω
-
+ 12 V
+ 12 V
+ 12 V
+ 8
2
3
A
- 4
LM 358
+ 8
B
- 4
6
1
1 kΩ
5
+
1 MΩ
150 pF
33 k
Ω
3.3
µF
+
330 kΩ
Preamplifier
(G
V
= 10)
2 MΩ
100 kΩ
7
DIS
2
TRG
6
THR
5
CTR
10 nF
555
8
4
3
1
4.7
µ
F
+
Monoflop (
f
p
= 0.5 sec. - 10 sec.)
Note: The influence of fluorescent light interference (100 Hz carrier) has to be reduced
by the installation of an additional 100 Hz notch filter.
Data Sheet
3
1999-04-01
+
3.3
µF
100 k
Ω
BCR 133
+ 12 V
+
1 MΩ
3.3
µF
+
6
2
2
A
- 4
1
LM 358
1 MΩ
150 pF
Pre-Amp
OUTPUT
+
+ 12 V
1 k
Ω
10 kΩ
LM 358
7
10 k
Ω
1N4148
V
CC
RES
Q
GND
1 kΩ
LED
EHA07092
KMY 10
Typical Radiation Pattern
0
20
40
60
Typical Radiation
Pattern
EHA07096
Package Outline
Special Package
SIEMENS
- % +
Pre-Amp Input
GND
+V
Pre-Amp Output
1.6
approx. 17
14
3.4
20
4
34
±0.1
42
3.4
EHA07098
26
1.6
1.5
11
Weight approx. 40 g
17
25
±0.1
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
Data Sheet
4
Dimensions in mm
1999-04-01
11
±
.8
Ø3
19
0.1
approx. 25
M8 x 0.5
R1
