SP5768
SP5768
3.0GHz Low Phase Noise Frequency Synthesiser
DS5077
ISSUE 1.4
July 2001
Features
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Complete 3.0GHz single chip system
Optimised for low phase noise, with comparison
frequencies up to 4 MHz
No RF prescaler
Selectable reference division ratio
Reference frequency output
Selectable charge pump current
Integrated loop amplifier
Four switching ports
Low power replacement for SP5658 and 5668
Downwards software compatible with SP5658
ESD protection, (Normal ESD handling
procedures should be observed)
Ordering Information
SP5768/KG/MP1S (Tubes)
SP5768/KG/MP1T (Tape and Reel)
SP5768/KG/QP1S (Tubes)
SP5768/KG/QP1T (Tape and Reel)
Description
The SP5768 is a single chip frequency synthesiser
designed for tuning systems up to 3.0GHz and is
optimized for low phase noise with comparison
frequencies up to 4 MHz.
The RF programmable divider contains a front end dual
modulus 16/17 functioning over the full operating range
and allows for coarse tuning in the upconverter
application and fine tuning in the downconverter.
Comparison frequencies are obtained either from a
crystal controlled on-chip oscillator or from an external
source. A buffered reference frequency output is also
available to drive a second SP5768.
The device also contains 4 switching ports.
Applications
•
TV, VCR and Cable tuning systems
•
Communications systems
REF
13 BIT
COUNT
RF INPUT
16/17
4 BIT
COUNT
REFERENCE
DIVIDER
CRYSTAL CAP
CRYSTAL
CHARGE PUMP
DRIVE
17 BIT LATCH
6 BIT LATCH
DATA
CLOCK
ENABLE
DATA
INTERFACE
5 BIT
LATCH & PORT/
TEST MODE
INTERFACE
PORT P0/OP
PORT P1/OC
PORT P2
PORT P3
Figure 1 - SP5768 block diagram
1
SP5768
16
CHARGE PUMP
CRYSTAL CAP
CRYSTAL
ENABLE
DATA
CLOCK
PORT P1/OC
PORT P2
DRIVE
V
EE
RF INPUT
RF INPUT
V
CC
REF
PORT P0/OP
PORT P3
Figure 2 - Pin Connections Diagram
SPOT REF.
MP16
QP16
Electrical Characteristics
These characteristics are guaranteed by either production test or design. They apply within the specified ambient
temperature and supply voltage unless otherwise stated. T
AMB
= -40°C to 80°C, V
CC
= +4·5V to +5·5V
Characteristic
Pin
Min
Value
Typ
18
100
100
30
Max
25
3000
300
300
Units
Conditions
Supply current
RF input frequency range
RF input voltage
12
13,14
13,14
13, 14
mA
MHz
mV rms 100 - 200MHz
mVrms
See Figure 6
See Figure 3
RF input impedance
Data, clock & enable
input high voltage
input low voltage
input current
hysterysis
Clock rate
Bus timing -
data set up
data hold
enable set up
enable hold
clock to enable
13,14
5,6,4
3
0
-10
0.8
6
5,6,4
300
600
300
600
300
ns
ns
ns
ns
ns
Vcc
0.7
10
V
V
µA
V
500
All input conditions
kHz
2
SP5768
Electrical Characteristics (continued)
These characteristics are guaranteed by either production test or design. They apply within the specified ambient
temperature and supply voltage unless otherwise stated. Tamb = -40°C to 80°C, Vcc = +4·5V to +5·5V
Characteristic
Pin
Min
Charge pump output
current
Charge pump output
leakage
Charge pump drive
output current
Crystal frequency
External reference input
frequency
External reference drive
level
Buffered reference
frequency output
output amplitude
output impedance
Comparison frequency
Equivalent phase noise
at phase detector
-148
1
Value
Typ
Units
Max
See Table 1
Vpin1 = 2V
±3
±10
nA
Vpin1=2V, Vcc = +5.0V,
Tamb = 25°C
Vpin 16=0.7V
Conditions
1
16
0.5
mA
2,3
3
2
2
20
20
MHz
MHz
See Figure 5 for application
Sinewave coupled through
10F blocking capacitor
Sinewave coupled through
10nF blocking capacitor
AC coupled, See note 1
3
0.2
0.5
Vpp
11
0.35
250
4
Vpp
Ω
MHz
dBc/Hz
2-20MHz
At 10 kHz, SSB, with 2 MHz
comparison from 4 MHz
crystal reference
RF division ratio
Reference division ratio
Output ports P0-P3
sink current
leakage current
1
2
7,8,9,10
240
2
131071
320
See Table 2
See Note 2
Vport = 0.7V
Vport = Vcc
2
10
mA
µA
Reference output disabled by connecting to Vcc if not required
Output ports high impedance on power up, with data, clock and enable at logic 0
3
SP5768
Absolute Maximum Ratings
All voltages are referred to Vee at 0V
Characteristic
Supply voltage, Vcc
RF input voltage
RF input DC offset
Port voltage
Charge pump DC offset
Varactor drive DC offset
Crystal DC offset
Buffered ref output
Data, clock & enable
DC offset
Storage temperature
Junction temperature
MP16 thermal resistance,
chip to ambient
chip to case
Power consumption at
Vcc=5.5V
ESD protection
Pin
12
13,14
13,14
7,8,9,10
1
16
2,3
11
5,6,4
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-55
Min
-0.3
Typ
Max
7
2.5
V cc+0.3
V cc+0.3
V cc+0.3
V cc+0.3
V cc+0.3
V cc+0.3
V cc+0.3
+125
+150
80
20
138
2
Units
V
Vp-p
V
V
V
V
V
V
V
°C
°C
°C/W
°C/W
mW
kV
All ports off
Mil-std 883B latest revision
method 3015 cat.1.
Differential
Conditions
Functional description
The SP5768 contains all the elements necessary, with
the exception of a frequency reference, loop filter and
external high voltage transistor, to control a varicap
tuned local oscillator, so forming a complete PLL
frequency synthesised source. The device allows for
operation with a high comparison frequency and is
fabricated in high speed logic, which enables the
generation of a loop with excellent phase noise
performance, even with high comparison frequencies.
The package and pin allocation is shown in Figure 1 and
the block diagram in Figure 2.
The SP5768 is controlled by a standard 3-wire bus
comprising data, clock and enable inputs. The
programming word contains 28 bits, four of which are
used for port selection, 17 to set the programmable
divider ratio, four bits to select the reference division
ratio, bits RD & R0-R2, see Table 2, two bits to set
charge pump current, bit C0 and C1, see Table 1, and
the remaining bit to access test modes, bit T0, see
Table 3. The programming format is shown in Figure 4.
The clock input is disabled by an enable low signal, data
is therefore only loaded into the internal shift registers
during an enable high and is clocked into the controlling
buffers by an enable high to low transition. This load is
also synchronised with the programmable divider so
giving smooth fine tuning.
The RF signal is fed to an internal preamplifier, which
provides gain and reverse isolation from the divider
signals. The output of the preamplifier is fed to the 17 bit
fully programmable counter, which is of MN+A
architecture. The M counter is 13 bit and the A counter
4
The output of the programmable counter is fed to the
phase comparator where it is compared in both phase
and frequency domain with the comparison frequency.
This frequency is derived either from the on board
crystal controlled oscillator or from an external reference
source. In both cases the reference frequency is divided
down to the comparison frequency by the reference
divider which is programmable into1 of 16 ratios as
descried in Table 2.
The output of the phase detector feeds the charge
pump and loop amplifier section, which when used with
an external high voltage transistor and loop filter
integrates the current pulses into the varactor line
voltage. The charge pump current setting is described
in Table 1,
A buffered crystal reference frequency suitable for
driving further synthesisers is available from Pin 11. If
not required this output can be disabled by connecting
to Vcc
The programmable divider output divided by 2, Fpd/2
and comparison frequency, Fcomp can be switched to
ports P0 and P1 respectively by switching the device
into test mode. The test modes are described in Table
3.
4
SP5768
+j1
+j0.5
+j2
+j0.2
+j5
0
1
-j0.2
S
11
:
Zo
= 50Ω
Normalised to 50Ω
-j0.5
-j1
4
3
2
-j5
Frequency Markers at 500MHz,
1GHz, 1.5GHz and 2.4GHz
-j2
Figure 3 - RF input impedance
CLOCK
ENABLE
DATA
2
27
P3
2
26
P2
2
25
P1
2
24
P0
2
23
T0
2
22
C1
2
21
C0
2
20
R2
2
19
R1
2
18
R0
2
17
RD
2
16
MSB
2
0
LSB
Frequency data
2^16 to 2^0
R2,R1,R0
RD
P3, P2, P1,P0
C1,C0
T0
:
:
:
:
:
:
Programmable divider ratio control bits
Reference divider control bits
Reference divider mode select
Port control bits
Charge pump current select
Test mode enable
Figure 4 - Data format
C1
0
0
1
1
C0
0
1
0
1
Current (in
µ
A)
230
1000
115
500
Table 1 - Charge pump current
5