SPN2326
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2326 is the N-Channel logic enhancement
mode power field effect transistor which is produced
using super high cell density DMOS trench
technology. The SPN2326 has been designed
specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast
switching speed.
APPLICATIONS
Powered System
DC/DC Converter
Load Switch
FEATURES
110V/1A,R
DS(ON)
= 310mΩ@V
GS
= 10V
High density cell design for extremely low RDS
(ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-6L package design
PIN CONFIGURATION(SOT-23-6L)
PART MARKING
2013/07/08
Ver.1
Page 1
SPN2326
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Symbol
D
D
G
S
D
D
Description
Drain
Drain
Gate
Source
Drain
Drain
ORDERING INFORMATION
Part Number
SPN2326S26RGB
Package
SOT-23-6L
Part
Marking
26YW
※
SPN2326S26RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
T
STG
R
θJA
Typical
110
±20
3.0
2.0
10
1.25
0.8
-55/150
-55/150
100
Unit
V
V
A
A
W
℃
℃
℃/W
2013/07/08
Ver.1
Page 2
SPN2326
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50V,R
L
=10Ω
I
D
=3A,V
GEN
=10V
R
G
=3.3Ω
V
DS
=80V,V
GS
=10V
I
D
= 5A
9
2
1.4
508
29
16.5
2
21.5
11.2
18.8
nS
pF
13
nC
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
V
DS
=0V,V
GS
=±20V
V
DS
=80V,V
GS
=0V
V
DS
=80V,V
GS
=0V
T
J
=125℃
V
DS
≥5V,V
GS
=10V
3.0
0.26
2.4
1.2
0.31
110
1
2.0
2.5
±100
1
5
V
nA
uA
A
Ω
S
V
Symbol
Conditions
Min.
Typ
Max.
Unit
R
DS(on)
V
GS
= 10V,I
D
=3A
gfs
V
SD
V
DS
=10V,I
D
=3A
I
S
=1A,V
GS
=0V
V
DS
=25,V
GS
=0V
f=1MHz
2013/07/08
Ver.1
Page 3
SPN2326
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
Capacitance
Gate Charge
On-Resistance vs. Junction Temperature
2013/07/08
Ver.1
Page 4
SPN2326
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
Normalized Thermal Transient Impedance, Junction to Foot
2013/07/08
Ver.1
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