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SR140

1 A, 80 V, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:重庆平伟实业

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
SR140 THRU SR1100
SCHOTTKY BARRIER RECTIFIER
VOLTAGE:40-100V
CURRENT:1.0A
FEATURES
·Low
switching noise
·Low
forward voltage drop
·High
current capability
·High
switching capabitity
·High
reliability
·High
surge capability
DO-41
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.034(0.9)
.028(0.7)
DIA.
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.33 grams
.107(2.7)
.080(2.0)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
SR140
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
.375”(9.5mm) lead length at T
L
=75°C
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rate load (JEDEC method)
Maximum Instantaneous Forward Voltage
at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
A
=25°C
@T
A
=100°C
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
I
R
10.0
C
J
R
θ
JA
110
50
pF
°C/W
0.55
0.70
1.0
mA
40
28
40
SR150 SR160 SR180 SR1100
units
50
35
50
60
42
60
1.0
30
0.85
80
49
80
100
56
100
V
V
V
A
A
V
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Notes:
1. Measured at 1MHz and applied reverse voltage of 4.0 volts
2. Thermal Resistance from junction to ambient at .375”(9.5mm) lead length
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参数对比
与SR140相近的元器件有:SR150、SR160、SR180、SR1100。描述及对比如下:
型号 SR140 SR150 SR160 SR180 SR1100
描述 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
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