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SRA16100

16 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB

器件类别:半导体    分立半导体   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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SRA1620-SRA16150
16.0AMP. Schottky Barrier Rectifiers
TO-220AC
.185(4.70)
.175(4.44)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.055(1.40)
.045(1.14)
Features
Low power loss, high efficiency.
High current capability, Low VF.
High reliability
High surge current capability.
Epitaxial construction.
Guard-ring for transient protection.
For use in low voltage, high frequency
inventor, free wheeling, and polarity
protection application
.113(2.87)
.103(2.62)
PIN1
.16(4.06)
.14(3.56)
2
.11(2.79)
.10(2.54)
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Mechanical Data
Cases: TO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: As marked
High temperature soldering guaranteed:
o
260 C/10 seconds.25”,(6.35mm) from
case.
Weight: 2.24 grams
o
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
SRA SRA SRA SRA
Type Number
1620
1630
1640
1650
SRA
1660
SRA SRA SRA
1690 16100 16150
Units
V
V
V
A
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@16.0A
Maximum D.C. Reverse Current
at Rated DC Blocking Voltage
@ Tc=25 C
o
@ Tc=100 C
o
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Cj
R
θJC
T
J
T
STG
20
14
20
30
21
30
40
28
40
50
35
50
16
200
60
42
60
90
63
90
100
70
100
150
105
150
0.55
0.5
15
700
-65 to +125
0.70
10
550
5.0
0.92
0.1
5.0
480
-65 to +150
1.05
V
mA
mA
pF
o
C/W
o
C
o
C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
-65 to +150
Notes:
1. Mounted on Heatsink Size of 2” x 3” x 0.25” Al-Plate.
2. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.
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mail:lge@luguang.cn
SRA1620-SRA16150
16.0AMP. Schottky Barrier Rectifiers
RATINGS AND CHARACTERISTIC CURVES (SRA1620 THRU SRA16150)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
20
350
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE
CURRENT. (A)
300
250
200
150
100
50
1
2
5
10
20
NUMBER OF CYCLES AT 60Hz
50
100
8.3ms Single Half Sine Wave
JEDEC Method
SRA1650-150
AVERAGE FORWARD
CURRENT. (A)
16
SRA1620-40
12
8
4
0
0
50
100
o
CASE TEMPERATURE. ( C)
150
FIG.3- TYPICAL FORWARD CHARACTERISTICS
50
10
FIG.4- TYPICAL REVERSE CHARACTERISTICS
Tj=100
0
C
16
62
0-
A1
INSTANTANEOUS FORWARD CURRENT. (A)
0-
40
16
60
INSTANTANEOUS REVERSE CURRENT. (mA)
SR
65
A1
SR
A1
69
0-
16
10
10
0
Tj=75
0
C
1.0
SR
SR
A1
61
50
.10
Tj=25
0
C
1.0
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
.01
0.1
.1
.2
.3
.4
.5
.6
.7
.8
.9
1.0
FORWARD VOLTAGE. (V)
.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
4000
SRA1650-60
2000
SR
TRANSIENT THERMAL IMPEDANCE. (
O
C/W)
100
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
JUNCTION CAPACITANCE.(pF)
1000
800
600
400
A1
10.0
62
SRA1
0-4
690-1
0
50
1
200
100
.1
.4
1.0
4
10
40
80 100
REVERSE VOLTAGE. (V)
0.1
0.01
0.1
1
PULSE DURATION. (sec)
10
100
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mail:lge@luguang.cn
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参数对比
与SRA16100相近的元器件有:SRA16150、SRA1620、SRA1630、SRA1640、SRA1650、SRA1660、SRA1690。描述及对比如下:
型号 SRA16100 SRA16150 SRA1620 SRA1630 SRA1640 SRA1650 SRA1660 SRA1690
描述 16 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB 16 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB 16 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB 16 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC
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