JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SS8550LT1
FEATURES
Power dissipation
P
CM:
0.2
W (Tamb=25℃)
2. 30¡ À0. 05
TRANSISTOR (PNP)
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 01 R
EF
1. 30¡ À0. 03
1. 25¡ À0. 05
Collector current
-1.5
A
I
CM:
Collector-base voltage
-40
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
unless otherwise specified)
Test
conditions
MIN
-40
-25
-5
-0.1
-0.1
-0.1
120
40
-0.5
-1.2
100
V
V
MHz
350
MAX
UNIT
V
V
V
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
Ic= -100
µ
A, I
E
=0
Ic= -0.1mA, I
B
=0
I
E
= -100
µ
A, I
C
=0
V
CB
= -40V, I
E
=0
V
CE
= -20V, I
B
=0
V
EB
= -5V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
=-800mA, I
B
= -80mA
I
C
=-800mA, I
B
= -80mA
V
CE
= -10V, I
C
= -50mA
0. 30
Unit: mm
2. 00¡ À0. 05
µ
A
µ
A
µ
A
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
f
T
f=
30MHz
H
CLASSIFICATION OF h
FE(1)
Rank
Range
L
120-200
200-350
DEVICE MARKING
SS8550LT1=Y2
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