SSF3339
30V P-Channel MOSFET
Main Product Characteristics
D
V
DSS
R
DS
(on)
I
D
-30V
37mΩ (typ.)
-4.1A
①
G
S
SOT-23
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
@T
A
=25℃
Symbol
I
D
@ TC = 25°C
I
D
@ TC = 70°C
I
DM
P
D
@TC = 25°C
V
DS
V
GS
T
J
T
STG
Parameter
unless otherwise specified
Max.
-4.1
①
-3.5
①
-20
1.4
-30
± 20
-55 to +150
W
V
V
°C
A
Units
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
②
Power Dissipation
③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Symbol
R
θJA
Characteristics
Junction-to-ambient (t ≤ 10s)
④
Typ.
—
Max.
90
Units
°C /W
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Page 1 of 7
Rev.1.1
SSF3339
30V P-Channel MOSFET
Electrical Characteristics
@T
A
=25℃
Symbol
V
(BR)DSS
R
DS(on)
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
-30
—
—
-1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
unless otherwise specified
Typ.
—
37
54
—
-1.4
—
—
—
—
17
2.5
5.0
7.2
4.8
24
11
665
108
83
Max.
—
52
87
-3
—
-1
-50
100
-100
—
—
—
—
—
—
—
—
—
—
pF
V
GS
= 0V,
V
DS
=-15V,
ƒ = 1MHz
ns
V
GS
=-10V, V
DS
=-25V,
R
GEN
=3Ω，
nC
Units
V
mΩ
Conditions
V
GS
= 0V, I
D
= -250μA
V
GS
=-10V,I
D
= -4.1A
V
GS
=-4.5V,I
D
= -3A
V
DS
= V
GS
, I
D
= -250μA
T
J
= 125°C
V
DS
= -24V,V
GS
= 0V
T
J
= 125°C
V
GS
=20V
V
GS
= -20V
I
D
= -6A,
V
DS
=-25V,
V
GS
= -10V
Min.
V
GS(th)
Gate threshold voltage
V
I
DSS
Drain-to-Source leakage current
μA
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
nA
Source-Drain Ratings and Characteristics
Symbol
I
S
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max.
-4.1
①
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
=1A, V
GS
=0V
TJ = 25°C, IF =-6A,
di/dt = 100A/μs
I
SM
V
SD
trr
Qrr
—
—
—
—
—
-0.79
9.7
3.8
-20
-1.0
—
—
A
V
ns
nC
www.goodark.com
Page 2 of 7
Rev.1.1
SSF3339
30V P-Channel MOSFET
Test Circuits and Waveforms
EAS test circuit:
Gate charge test circuit:
Switching time test circuit:
Switch Waveforms:
Notes:
①Calculated
continuous current based on maximum allowable junction temperature.
②Repetitive
rating; pulse width limited by max. junction temperature.
③The
power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The
value of
R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 7
Rev.1.1
SSF3339
30V P-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Rev.1.1
SSF3339
30V P-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance Junction-to-Case
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Page 5 of 7
Rev.1.1
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