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STPR840DF

8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC

器件类别:半导体    分立半导体   

厂商名称:Diodes

厂商官网:http://www.diodes.com/

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STPR805DF - STPR860DF
8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
Features
·
·
·
·
·
·
·
Glass Passivated Die Construction
Diffused Junction
Super-Fast Switching Times for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 125A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
TO-220AC
L
B
C
K
D
A
Pin 1
Pin 2
M
Dim
A
B
C
D
E
G
J
Min
14.22
9.65
2.54
5.84
¾
12.70
0.51
3.53Æ
3.56
1.14
0.30
2.03
4.83
Max
15.88
10.67
3.43
6.86
6.35
14.73
1.14
4.09Æ
4.83
1.40
0.64
2.92
5.33
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
J
R
E
N
G
K
L
M
P
Pin 1
Pin 2
Case
N
P
R
All Dimensions in mm
@ T
A
= 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
C
= 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance Junction to Case
Operating and Storage Temperature Range
@ I
F
= 8.0A
@T
C
= 25°C
@ T
C
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
R
qJC
T
j,
T
STG
STPR
805DF
50
35
STPR
810DF
100
70
STPR
815DF
150
105
STPR
820DF
200
140
STPR
830DF
300
210
STPR
840DF
400
280
STPR
850DF
500
350
STPR
860DF
600
420
Unit
V
V
A
A
8.0
125
0.95
5.0
500
35
85
6.3
-65 to +150
50
60
1.3
1.5
V
mA
ns
pF
°C/W
°C
Notes:
1. Case mounted on heatsink.
2. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A.
3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
DS14010 Rev. C-2
1 of 2
STPR805DF-STPR860DF
8
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
100
I
(AV)
, AVERAGE FORWARD CURRENT (A)
50V - 200V
10
300V - 400V
6
500V - 600V
4
1.0
2
Pulse width = 300
µ
s
2% duty cycle
0
0
50
100
150
T
C
, CASE TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
0.1
0.2
0.6
1.0
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
400
150
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
8.3 ms single half-sine-wave
JEDEC method
125
500V - 600V
100
75
C
j
, CAPACITANCE (pF)
100
50V - 400V
50
25
0
10
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
100
100
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
10
T
C
= 100
°
C
1.0
T
C
= 75
°
C
0.1
T
C
= 25
°
C
0.01
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS14010 Rev. C-2
2 of 2
STPR805DF-STPR860DF
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参数对比
与STPR840DF相近的元器件有:STPR860DF、STPR850DF、STPR820DF、STPR830DF、STPR815DF、STPR810DF、STPR805DF。描述及对比如下:
型号 STPR840DF STPR860DF STPR850DF STPR820DF STPR830DF STPR815DF STPR810DF STPR805DF
描述 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC
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