®
STPS40170C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
V
F
(max)
FEATURES AND BENEFITS
■
■
■
■
■
■
2 x 20 A
170 V
175 °C
0.75 V
K
A1
K
A2
K
High junction temperature capability
Low leakage current
Good trade off between leakage current and
forward voltage drop
Low thermal resistance
High frequency operation
Avalanche specification
A2
K
A1
A2
A1
TO-220AB
STPS40170CT
D
2
PAK
STPS40170CG
DESCRIPTION
Dual center tab Schottky rectifier suited for High
Frequency Switched Mode Power Supplies.
Packaged in TO-220AB, D2PAK and TO-247,
these devices are intended for use to enhance the
reliability of the application.
A2
K
A1
TO-247
STPS40170CW
Table 2: Order Codes
Part Numbers
STPS40170CT
STPS40170CG
STPS40170CG-TR
STPS40170CW
Marking
STPS40170CT
STPS40170CG
STPS40170CG
STPS40170CW
September 2005
REV. 1
1/8
STPS40170C
Table 3: Absolute Ratings
(limiting values, per diode)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
stg
T
j
dV/dt
dPtot
* : ---------------
dTj
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
T
c
= 150 °C
δ
= 0.5
Per diode
Per device
Value
170
60
20
40
250
14100
-65 to + 175
175
10000
Unit
V
A
A
A
W
°C
°C
V/µs
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
t
p
= 10 ms sinusoidal
t
p
= 1 µs T
j
= 25 °C
1
-
<
------------------------- thermal runaway condition for a diode on its own heatsink
Rth
(
j
–
a
)
Table 4: Thermal Parameters
Symbol
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
∆
Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Parameter
Junction to case
Per diode
Total
Coupling
Value
1.2
0.85
0.5
Unit
°C/W
Table 5: Static Electrical Characteristics
(per diode)
Symbol
I
R
*
Parameter
Reverse leakage current
Tests conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
F
**
Forward voltage drop
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Pulse test:
* tp = 5 ms,
δ
< 2%
** tp = 380 µs,
δ
< 2%
Min.
Typ
7
0.69
0.79
Max.
30
30
0.92
0.75
1.00
0.86
Unit
µA
mA
V
R
= V
RRM
I
F
= 20A
I
F
= 40A
V
To evaluate the conduction losses use the following equation: P = 0.64 x I
F(AV)
+ 0.055 I
F (RMS)
2
2/8
STPS40170C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
P
F(AV)
(W)
22
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
I
F(AV)
(A)
T
d=0.05
d=0.1
d=0.2
d=0.5
d=1
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
I
F(AV)
(A)
22
R
th(j-a)
=R
th(j-c)
20
18
16
14
12
10
8
6
4
T
R
th(j-a)
=15°C/W
d
=t
p
/T
t
p
2
0
0
d
=t
p
/T
25
t
p
T
amb
(°C)
50
75
100
125
150
175
Figure 3: Normalized avalanche
derating versus pulse duration
P
ARM
(t
p
)
P
ARM
(1µs)
1
power
Figure 4: Normalized avalanche
derating versus junction temperature
P
ARM
(t
p
)
P
ARM
(25°C)
power
1.2
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
T
j
(°C)
0
25
50
75
100
125
150
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
I
M
(A)
250
Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration
Z
th(j-c)
/R
th(j-c)
1.0
0.9
200
0.8
0.7
d=0.5
150
T
C
=50°C
0.6
0.5
0.4
0.3
d=0.2
d=0.1
T
C
=75°C
100
T
C
=125°C
T
50
0.2
I
M
t
d
=0.5
t(s)
1.E-02
1.E-01
1.E+00
0.1
Single pulse
t
P
(s)
1.E-02
1.E-01
d
=t
p
/T
t
p
0
1.E-03
0.0
1.E-03
1.E+00
3/8
STPS40170C
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
I
R
(µA)
1.E+05
T
j
=150°C
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
1.E+04
T
j
=125°C
1.E+03
T
j
=100°C
1.E+02
T
j
=75°C
100
1.E+01
T
j
=50°C
1.E+00
T
j
=25°C
V
R
(V)
1.E-01
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
V
R
(V)
10
1
10
100
1000
Figure 9: Forward voltage drop versus forward
current (per diode, low level)
I
FM
(A)
20
18
16
14
Tj=125°C
(Maximum values)
Figure 10: Forward voltage drop versus
forward current (per diode, high level)
I
FM
(A)
1000
Tj=125°C
(Maximum values)
100
12
10
8
6
4
2
0
0.0
0.1
0.2
0.3
V
FM
(V)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
Tj=25°C
(Maximum values)
10
Tj=25°C
(Maximum values)
V
FM
(V)
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 11: Thermal resistance junction to am-
bient versus copper surface under tab (epoxy
printed board FR4, Cu = 35µm) (D
2
PAK)
R
th(j-a)
(°C/W)
80
D²PAK
70
60
50
40
30
20
10
S
CU
(cm²)
0
0
5
10
15
20
25
30
35
40
4/8
STPS40170C
Figure 12: D
2
PAK Package Mechanical Data
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
2.49
2.69
0.098
0.106
0.03
0.23
0.001
0.009
0.70
0.93
0.027
0.037
1.14
1.70
0.045
0.067
0.45
0.60
0.017
0.024
1.23
1.36
0.048
0.054
8.95
9.35
0.352
0.368
10.00
10.40
0.393
0.409
4.88
5.28
0.192
0.208
15.00
15.85
0.590
0.624
1.27
1.40
0.050
0.055
1.40
1.75
0.055
0.069
2.40
3.20
0.094
0.126
0.40 typ.
0.016 typ.
0°
8°
0°
8°
REF.
A
E
L2
C2
D
L
L3
A1
B2
B
G
A2
R
C
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
Figure 13: Foot Print Dimensions
(in millimeters)
16.90
10.30
1.30
5.08
3.70
8.90
5/8
