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STTH5L06B

Rectifiers 5.0 Amp 600 Volt

器件类别:分立半导体    二极管   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

器件标准:

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器件参数
参数名称
属性值
Brand Name
STMicroelectronics
是否Rohs认证
符合
厂商名称
ST(意法半导体)
零件包装代码
DPAK
包装说明
R-PSSO-G2
针数
3
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE
应用
HIGH VOLTAGE ULTRA FAST RECOVERY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.05 V
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
60 A
元件数量
1
相数
1
端子数量
2
最高工作温度
175 °C
最大输出电流
5 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大重复峰值反向电压
600 V
最大反向恢复时间
0.095 µs
表面贴装
YES
端子面层
Matte Tin (Sn) - annealed
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
30
文档预览
STTH5L06
Turbo 2 ultrafast high voltage rectifier
Datasheet - production data
A
K
K
Description
The device is developed using ST's Turbo 2 600
V technology. It is well-suited as a boost diode,
especially for use in continuous mode power
factor corrections and hard switching conditions.
A
A
TO-220AC
K
A
TO-220FPAC
This device is also intended for use as a free
wheeling diode in power supplies and other
power switching applications.
Table 1: Device summary
Symbol
I
F(AV)
Value
5A
600 V
125 µA / 150 µA
175 °C
0.85 V
65 ns
K
DO-201AD
K
V
RRM
I
R
(max)
T
j
(max)
V
F
(typ)
K
K
t
rr
(typ)
K A
NC
DPAK
K A
NC
Features
Ultrafast switching
Low reverse recovery current
Reduces switching losses
Low thermal resistance
Insulated package: TO-220FPAC
Insulation voltage: 2000 V
RMS
sine
ECOPACK
®
2 compliant component for
DPAK on demand
May 2017
DocID8371 Rev 5
1/15
www.st.com
This is information on a product in full production.
Characteristics
STTH5L06
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
V
RRM
Parameter
Repetitive peak reverse voltage
TO-220AC
TO-220FPAC
DO-201AD
DPAK
TO-220AC, DPAK
I
F(AV)
Average forward current
δ = 0.5, square wave
Repetitive peak forward
current
DO-201AD
TO-220FPAC
I
FRM
T
C
= 150 °C
T
l
= 50 °C
T
C
= 135 °C
65
90
110
60
-65 to +175
175
°C
°C
A
A
5
A
Value
600
20
10
Unit
V
I
F(RMS)
Forward rms current
A
t
P
= 5 μs, F = 5 kHz square
TO-220AC
TO-220FPAC
t
p
= 10 ms sinusoidal
DO-201AD
DPAK
I
FSM
Surge non repetitive
forward current
T
stg
T
j
Storage temperature range
Maximum operating junction temperature
Table 3: Thermal parameter
Symbol
R
th(j-c)
R
th(j-l)
R
th(j-a)
Junction to case
Parameter
TO-220AC / DPAK
TO-220FPAC
Junction to lead
L = 10 mm, DO-201AD
Junction to ambient
Max. value
3.5
Unit
°C/W
6
20
°C/W
75
2/15
DocID8371 Rev 5
STTH5L06
Table 4: Static electrical characteristics
Symbol
Parameter
T
j
= 25 °C
I
R
(1)
Reverse
leakage
current
Test conditions
V
R
= 600 V
TO-220AC
TO-220FPAC
DPAK
DO-201AD
V
F
(2)
Notes:
(1)
Pulse
(2)
Pulse
Characteristics
Min.
-
-
-
-
-
0.85
10
25
Typ.
Max.
5
125
150
1.30
1.05
V
µA
Unit
T
j
= 150 °C
V
R
= 600 V
Forward
voltage drop
T
j
= 25 °C
T
j
= 150 °C
I
F
= 5 A
test: t
p
= 5 ms, δ < 2%
test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.89 x I
F(AV)
+ 0.033 x I
F2(RMS)
Table 5: Dynamic electrical characteristics
Symbol
t
rr
Parameter
Reverse recovery time
Test conditions
T
j
= 25 °C
I
F
= 1 A
V
R
= 30 V
dI
F
/dt = -50 A/µs
I
F
= 5 A
V
FR
= 1.1 x
V
F
max
dI
F
/dt = 100 A/µs
I
F
= 5 A
dI
F
/dt = 100 A/µs
Min.
-
Typ.
65
Max.
95
Unit
ns
t
fr
Forward recovery time
T
j
= 25 °C
-
150
ns
V
FP
Forward recovery voltage
-
7
V
DocID8371 Rev 5
3/15
Characteristics
STTH5L06
1.1
Characteristics (curves)
Figure 1: Conduction losses versus average
current
P(W)
7
6
5
4
3
2
T
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1.0
Figure 2: Forward voltage drop versus forward
current
1
δ =tp/T
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
tp
5.5
6.0
IF(
AV)
(A)
Figure 3: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220AC, DPAK)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
δ = 0.2
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAC)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.3
0.2
0.1
0.0
δ = 0.1
T
Single pulse
0.2
δ = 0.1
0.1
Single pulse
T
δ
=tp/T
1.E-02
1.E-01
tp
1.
E+00
0.0
1.E-03
1.E-02
1.E-01
δ
=tp/T
1.E+00
tp
1.E+01
1.E-03
t
p
(s)
t
p
(s)
Figure 5: Relative variation of thermal impedance
junction to ambient versus pulse duration
(DO-201AD)
Z
th(j-a)
/R
th(j-a)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
Figure 6: Peak reverse recovery current versus
dI
F
/dt (typical values)
I
RM
(A)
8
V
R
= 400 V
T
j
= 125 °C
I
F
= 2 x I
F(AV)
Epoxy FR4, L
leads
= 10 mm
7
6
5
4
I
F
= I
F(AV)
I
F
= 0.5 x I
F(AV)
I
F
= 0.25 x I
F(AV)
0.5
0.4
0.3
δ = 0.2
3
2
T
0.2
δ = 0.1
1
δ
= tp/T
1.E+00
1.E+01
1.E+02
tp
0.1
Single pulse
0.0
1.E-01
0
0
10
1.E+03
20
30
40
50
60
70
80
90
100
t
p
(s)
dl
F
/dt(A/µs)
4/15
DocID8371 Rev 5
STTH5L06
Figure 7: Reverse recovery time versus dI
F
/dt
(typical values)
t
rr
(ns)
1000
900
V
R
= 400 V
T
j
= 125 °C
Characteristics
Figure 8: Reverse recovery charges versus dI
F
/dt
(typical values)
Q
rr
(nC)
500
450
400
350
I
F
= 2 x I
F(AV)
I
F
= I
F(AV)
I
F
= 0.5 x I
F(AV)
V
R
= 400 V
T
j
= 125 °C
I
F
= 2 x I
F(AV)
800
700
600
500
400
I
F
= I
F(AV)
I
F
= 0.5 x I
F(AV)
300
250
200
150
100
50
0
300
200
100
0
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
60
70
80
90
100
dl
F
/dt(A/µs)
dl
F
/dt(A/µs)
Figure 9: Softness factor versus dI
F
/dt
(typical values)
S
factor
2.4
2.2
2.0
Figure 10: Relative variations of dynamic
parameters versus junction temperature
1.25
S
factor
I
F
= I
F(AV)
V
R
= 400 V
T
j
= 125°C
1.00
I
RM
Q
rr
1.8
1.6
1.4
1.2
1.0
0.75
0.50
0.8
0.6
0.4
0.2
0
10
20
30
40
50
60
70
80
90
100
0.25
I
F
= I
F(A V)
V
R
= 400 V
Reference: T j = 125°C
0.00
25
50
75
100
125
dI
F
/dt(A/µs)
T
j
(°C)
Figure 11: Transient peak forward voltage versus
dIF/dt (typical values)
10
Figure 12: Forward recovery time versus dI
F
/dt
(typical values)
t
fr
(ns)
200
180
160
140
120
100
I
F
= I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
V
FP
(V)
I
F
= I
F(AV)
T
j
= 125°C
9
8
7
6
5
4
80
60
40
20
0
3
2
1
0
0
20
40
60
80
100
120
140
160
180
200
0
20
40
60
80
100
120
140
160
180
200
dl
F
/dt(A/µs)
dI F/dt (A /µs)
DocID8371 Rev 5
5/15
查看更多>
参数对比
与STTH5L06B相近的元器件有:STTH5L06D、STTH5L06FP、STTH5L06。描述及对比如下:
型号 STTH5L06B STTH5L06D STTH5L06FP STTH5L06
描述 Rectifiers 5.0 Amp 600 Volt Rectifiers 5.0 Amp 600 Volt Rectifiers 5 Amp 600 Volt Rectifiers 5.0 Amp 600 Volt
Brand Name STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
厂商名称 ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体)
零件包装代码 DPAK TO-220AC TO-220AC DO-201AD
包装说明 R-PSSO-G2 R-PSFM-T2 TO-220FPAC, 2 PIN O-PALF-W2
针数 3 3 3 2
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
应用 HIGH VOLTAGE ULTRA FAST RECOVERY HIGH VOLTAGE ULTRA FAST RECOVERY HIGH VOLTAGE ULTRA FAST RECOVERY HIGH VOLTAGE ULTRA FAST RECOVERY
外壳连接 CATHODE CATHODE ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.05 V 1.05 V 1.05 V 1.05 V
JESD-30 代码 R-PSSO-G2 R-PSFM-T2 R-PSFM-T2 O-PALF-W2
JESD-609代码 e3 e3 e3 e3
最大非重复峰值正向电流 60 A 90 A 90 A 110 A
元件数量 1 1 1 1
相数 1 1 1 1
端子数量 2 2 2 2
最高工作温度 175 °C 175 °C 175 °C 175 °C
最大输出电流 5 A 5 A 5 A 5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR ROUND
封装形式 SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT LONG FORM
峰值回流温度(摄氏度) 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 600 V 600 V 600 V 600 V
最大反向恢复时间 0.095 µs 0.095 µs 0.095 µs 0.095 µs
表面贴装 YES NO NO NO
端子面层 Matte Tin (Sn) - annealed Matte Tin (Sn) Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
端子形式 GULL WING THROUGH-HOLE THROUGH-HOLE WIRE
端子位置 SINGLE SINGLE SINGLE AXIAL
处于峰值回流温度下的最长时间 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Factory Lead Time - 11 weeks 15 weeks 8 weeks
JEDEC-95代码 - TO-220AC TO-220AC DO-201AD
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