RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction
Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plas-
tic package. These HBT MMICs are fabricated using molecular beam epi-
taxial growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot. These amplifiers are spe-
cially designed for use as driver devices for infrastructure equipment in
the 400 MHz to 2500 MHz cellular, ISM, WLL, PCS, WCDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital
Optimum Technology
applications.
Features
Lower R
TH
for increased MTTF
10
8
Hours at T
Lead
=85C
On-Chip Active Bias Control, Sin-
gle 5V Supply
Excellent Linearity:+43dBm Typ.
OIP
3
at 1960MHz
High P
1dB
:+25dBm Typ.
High Gain:+18.5dB at 850MHz
Efficient: Consumes Only
575mW
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Typical OIP
3
, P1dB, Gain
dBm
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
50
45
40
35
30
25
20
15
10
5
0
850 MHz
1960 MHz
2140 MHz
OIP3
P1dB
Gain
Applications
W-CDMA, PCS, Cellular Systems
Multi-Carrier Applications
2450 MHz
Parameter
Small Signal Gain
Min.
12.5
Specification
Typ.
18.4
13.6
13.5
12.8
25.0
25.0
25.0
25.0
41.0
43.0
42.0
41.0
4.5
4.8
5.0
5.7
1.2:1
1.3:1
1.2:1
1.2:1
575.0
115
70
Max.
15.0
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
Condition
850MHz
1960MHz
2140MHz
2450MHz
850MHz
1960MHz
2140MHz
2450MHz
850MHz, P
OUT
per tone=+11dBm, Tone
Spacing=1MHz
1960MHz
2140MHz
2450MHz
850MHz
1960MHz
2140MHz
2450MHz
850MHz
1960MHz
2140MHz
2450MHz
V
CC
=5V
junction to backside
Output Power at 1dB Compression
24.0
Output Third Order Intercept Point
39.0
Noise Figure
6.3
Input VSWR
2.0:1
Operating Dissipated Power
Device Operating Current
Thermal Resistance
90
135
mW
mA
°C/W
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
