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SZM2166ZSQ

RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

器件类别：热门应用    无线/射频/通信   

厂商名称：RF Micro Devices (Qorvo)

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参数 预览 参数对比
器件参数
参数名称
属性值
端子数量
40
最小工作温度
-40 Cel
最大工作温度
85 Cel
状态
Active
微波射频类型
NARROW BAND HIGH POWER
功能数量
1
包装材料
PLASTIC/EPOXY
ckage_equivalence_code
LCC40,.24SQ,20
wer_supplies__v_
6
sub_category
RF/Microwave Amplifiers
最大供电电压
832 mA
工艺
GAAS
文档预览
SZM-2166Z
2.3GHz to
2.7GHz 2W
Power Ampli-
fier
SZM-2166Z
2.3GHz to 2.7GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier
housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT
amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an
ideal combination of low cost and high reliability. This product is specifically designed for
802.16 customer premises equipment (CPE) terminals in the 2.3GHz to 2.7GHz bands. It can
run from a 3V to 6V supply. The external output match and bias adjustability allows load line
optimization for other applications over narrower bands. It features an output power detector,
on/off power control, and high RF overdrive robustness. A 20dB step attenuator feature can be
utilized by switching the second stage Power up/down control. This product features a RoHS
compliant and Green package with matte finish, designated by the “Z” suffix
Optimum Technology
Matching® Applied
Vcc = 5V
Features
P
1dB
=35dBm at 6V
Three Stages of Gain: 37dB
802.11g 54Mb/s Class AB Per-
formance
P
OUT
=27dBm at 2.5%EVM, V
CC
6V, 878mA
Active Bias with Adjustable Cur-
rent
On-Chip Output Power Detector
Low Thermal Resistance
Power Up/Down Control
1s
Attenuator step 20dB at
V
PC2
=0V
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
P
ower
Up/Dow n
Control
P
ower
Detector
Vbias = 5V
RFIN
RFOUT
Stage 1
Bias
Stage 2
Bias
Stage 3
Bias
Applications
802.16 WiMAX Driver or Output
Stage
802.11b/g WiFi, WiFi
CPE Terminal Applications
Condition
Parameter
Frequency of Operation
Output Power at 1dB Compression
Small Signal Gain
EVM
Third Order Suppression
Noise Figure
Worst Case Input Return Loss
Worst Case Output Return Loss
Output Voltage Range
Quiescent Current
Power Up Control Current
V
cc
Leakage Current
Min.
2300
34.5
Specification
Typ.
35
36
2.5
-40
Max.
2700
Unit
MHz
dBm
dB
%
dBc
dB
dB
dB
V
-35
2.7GHz
2.7GHz
27dBm Output power EVM 802.11g 54Mb/s-
2.7GHz
(P
OUT
=23dBm per tone)-2.7GHz
2.7GHz
2.5GHz to 2.7GHz
2.5GHz to 2.7GHz
P
OUT
=10dBm to 33dBm
V
cc
=6V
V
pc
=6V, I
VPC1
+I
VPC2
+I
VPC3
V
cc
=6V, V
pc
=0V
junction - lead
10
13
615
8.3
14
14
0.9 to 1.8
724
4
832
100
mA
mA
A
Thermal Resistance
12
°C/W
Test Conditions: 2.5GHz to 2.7GHz App circuit, Z
0
=50, V
cc
=6.0V, Iq=724mA, T
BP
=30°C
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS110620
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 21
SZM-2166Z
Absolute Maximum Ratings
Parameter
VC3 Collector Bias Current (I
VC3
)
VC2 Collector Bias Current (I
VC2
)
VC1 Collector Bias Current (I
VC1
)
*****Device Voltage (V
D
)
Operating Lead Temperature (T
L
)
****Max CW RF output Power for
50 continuous long term opera-
tion
Max CW RF Input Power for 50out-
put load
Max CW RF Input Power for 10:1
VSWR FR out load
Max Storage Temperature
Operating Junction Temperature (T
J
)
ESD Human Body Model
Moisture Sensitivity Level
Rating
1500
500
150
9.0
-40 to +85
30
26
5
-40 to +150
+150
Class 1B
MSL-1
Unit
mA
mA
mA
V
°C
dBm
dBM
dBm
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
****With specified application circuit
*****No RF Drive
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
CQ
V
CC
<(T
J
-T
L
)/R
TH
,
j-l
Note: I
CQ
in this equation is for the stage with the highest current
Typical Performance with appropriate app circuit (V
CC
=6V, I
CQ
=655mA, 802.11g 54Mb/s 64QAM)
Parameter
Unit
dB
dBm
%
mA
dB
dB
2.3
GHz
1
37.5
34.0
2.3
768
23.0
14.0
**2.4
GHz
1
37.5
34.0
2.9
779
21.0
11.0
***2.5 ***2.6 ***2.7
GHz
2
GHz
2
GHz
2
37.5
35.0
1.7
900
14.0
20.0
37.0
35.0
1.7
889
14.0
25.0
35.0
35.0
2.5
878
14.0
18.0
Gain at P
OUT
=26dBm
P
1dB
EVM% at 27dBm Output Power
Current at P
OUT
2.5% EVM
Input Return Loss
Output Return Loss
Note 1: Measured with 2.3GHz to 2.4Ghz Application circuit
Note 2: Measured with 2.5GHz to 2.7GHz Application circuit
2 of 21
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110620
SZM-2166Z
Measured 2.3GHz to 2.4GHz Application Circuit Data (V
CC
=V
PC
=6.0V, I
q
=653mA, T=25°C)
EVM vs Frequency, T=+25C
802.11g, OFDM 54Mb/s, 64QAM
5
4
EVM(%)
3
2
1
0
16
18
20
22
24
26
28
30
Pout(dBm)
2.3GHz
2.4GHz
EVM(%)
EVM vs Pout, F=2.3GHz
802.11g, OFDM 54Mb/s, 64QAM
5
4
3
2
1
0
16
18
20
22
-40C
24
26
+85C
28
30
Pout(dBm)
+25C
DS110620
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 21
SZM-2166Z
EVM vs Pout, F=2.4GHz
802.11g, OFDM 54Mb/s, 64QAM
5
4
EVM(%)
IM3(dBc)
-30
-35
-40
IM3 vs Pout (2 Tone Avg.), T=+25C
Tone Spacing = 1MHz
3
2
1
0
16
18
20
22
-40C
24
26
+85C
28
30
Pout(dBm)
+25C
-45
-50
-55
-60
-65
-70
18
20
22
Pout(dBm)
2.3GHz
2.4GHz
24
26
28
Typical Gain vs Pout, F=2.3GHz
44
42
40
Gain(dB)
Gain(dB)
44
42
40
38
36
34
32
30
Typical Gain vs Pout, F=2.4GHz
38
36
34
32
30
18
20
22
24
26
28
30
32
34
36
Pout(dBm)
-40C
+25C
+85C
18
20
22
24
26
28
30
32
34
36
Pout(dBm)
-40C
+25C
+85C
Narrowband S11 - Input Return Loss
-10
-12.5
-15
S11(dB)
S12(dB)
-40
-45
-50
-55
-60
-65
-70
-75
-80
Narrowband S12 - Reverse Isolation
-17.5
-20
-22.5
-25
-27.5
-30
2.3
2.32
2.34
2.36
2.38
2.4
Frequency(GHz)
-40C
+25C
+85C
2.3
2.32
2.34
2.36
2.38
2.4
Frequency(GHz)
-40C
+25C
+85C
4 of 21
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110620
SZM-2166Z
Narrowband S21 - Forward Gain
45
43
41
39
Narrowband S22 - Output Return Loss
0
-2.5
-5
S22(dB)
-7.5
-10
-12.5
-15
-17.5
-20
S21(dB)
37
35
33
31
29
27
25
2.3
2.32
2.34
-40C
+25C
2.36
+85C
2.38
2.4
Frequency(GHz)
2.3
2.32
2.34
2.36
2.38
2.4
Frequency(GHz)
-40C
+25C
+85C
DC Supply Current vs Pout, F=2.3GHz
1.6
1.4
1.2
Idc(A)
DC Supply Current vs Pout, F=2.4GHz
1.6
1.4
1.2
Idc(A)
1
0.8
0.6
0.4
18
20
22
24
26
28
30
32
34
36
Pout(dBm)
-40C
+25C
+85C
1
0.8
0.6
0.4
18
20
22
24
26
28
30
32
34
36
Pout(dBm)
-40C
+25C
+85C
RF Power Detector (Vdet) vs Pout, F=2.4GHz
2
1.8
1.6
Vdet(V)
Noise Figure vs Frequency, T=+25C
8
7.9
7.8
1.4
1.2
1
NF(dB)
18
20
22
24
-40C
26
28
+25C
30
+85C
32
34
36
7.7
7.6
7.5
0.8
7.4
2.3
2.31
2.32
2.33
2.34
2.35
2.36
2.37
2.38
2.39
2.4
Frequency(GHz)
Pout(dBm)
DS110620
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 21
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参数对比
与SZM2166ZSQ相近的元器件有：SZM-2166Z、SZM2166Z、SZM2166ZPCK-EVB1、SZM2166ZPCK-EVB2、SZM2166ZPCK-EVB3、SZM2166ZSR。描述及对比如下：
型号 SZM2166ZSQ SZM-2166Z SZM2166Z SZM2166ZPCK-EVB1 SZM2166ZPCK-EVB2 SZM2166ZPCK-EVB3 SZM2166ZSR
描述 RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
最小工作温度 -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel
最大工作温度 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel
状态 Active Active Active Active Active Active Active
微波射频类型 NARROW BAND HIGH POWER NARROW BAND HIGH POWER NARROW BAND HIGH POWER NARROW BAND HIGH POWER NARROW BAND HIGH POWER NARROW BAND HIGH POWER NARROW BAND HIGH POWER
最大输入功率 - 26 dBm - 26 dBm 26 dBm 26 dBm -
最小工作频率 - 2300 MHz - 2300 MHz 2300 MHz 2300 MHz -
最大工作频率 - 2700 MHz - 2700 MHz 2700 MHz 2700 MHz -
加工封装描述 - GREEN, PLASTIC, QFN-40 - GREEN, PLASTIC, QFN-40 GREEN, PLASTIC, QFN-40 GREEN, PLASTIC, QFN-40 -
结构 - COMPONENT - COMPONENT COMPONENT COMPONENT -
增益 - 34.5 dB - 34.5 dB 34.5 dB 34.5 dB -
最大电压驻波比 - 10 - 10 10 10 -
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器件捷径:
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