TA329..Q
TA329..Q
Asymmetric Thyristor
Advance Information
Replaces March 1998 version, DS4680-2.1
DS4680-3.0 January 2000
APPLICATIONS
s
High Frequency Applications
s
High Power Choppers And Inverters
s
Welding
s
Ultrasonic Generators
s
Induction Heating
s
400Hz UPS
s
PWM Inverters
KEY PARAMETERS
V
DRM
1400V
I
T(RMS)
370A
I
TSM
2000A
dVdt
1000V/
µ
s
dI/dt
1000A/
µ
s
t
q
7.0
µ
s
FEATURES
s
Low Loss Asymmetrical Diffusion Structure
s
High Interdigitated Amplifying Gate
s
Gate Assisted Turn-off With Exclusive Bypass Diode
s
Fully Characterised For Operation up to 40kHz
s
Directly Compatible With 220-480 A.c. Mains
VOLTAGE RATINGS
Type Number
Repetitive Peak
Off-state Voltage
V
DRM
V
1400
1200
1000
Repetitive Peak
Reverse Voltage
V
RRM
V
10
10
10
TA329 14 Q
TA329 12 Q
TA329 10 Q
Lower voltage grades available.
Outline type code: MU86.
See Package Details for further information.
CURRENT AND SURGE RATINGS
Symbol
Double Side Cooled
I
T(RMS)
I
TSM
I
2
t
RMS value
Surge (non-repetitive) on-state current
I
2
t for fusing
Half sine wave, duty cycle 50%, T
case
= 80
o
C,
T
j
= 125˚C.
T
j
= 125
o
C, t
p
= 1ms, V
R
= 0
t
p
≥
10ms
370
2000
20 x 10
3
A
A
A
2
s
Parameter
Conditions
Max.
Units
1/10
TA329..Q
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 4.0kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
-40
3.6
125
150
4.4
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.085
0.153
0.204
0.02
0.04
135
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
DYNAMIC CHARACTERISTICS
Symbol
V
TM
I
RRM
I
DRM
dV/dt
dI/dt
Parameter
Maximum on-state voltage
Peak reverse current
Off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Conditions
At 600A peak, T
case
= 125
o
C
At V
RRM
, T
case
= 125
o
C
At V
DRM
, T
case
= 125
o
C
To 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Gate source 20V, 20Ω
t
r
≤
5µs.
Non-repetitive
Repetitive
t
q†
Max. gate assisted turn-off time
(with feedback diode)
T
j
= 125
o
C, I
T(PK)
= 200A,
t
p
= 25µs (half sine wave),
V
R
= DF451 Diode voltage drop,
dV/dt = 600V/µs (linear to 60% V
DRM
),
V
GK
= -5V
T
j
= 125
o
C, I
TM
= 100A,
t
p
> 100µs, dI
R
/dt = 30A/µs, V
R
= 1V,
dV/dt = 600V/µs (linear to 60% V
DRM
),
Gate open.
Min.
-
-
-
-
-
-
-
Max.
2.5
30
1
1000
1000
500
7
Units
V
mA
mA
V/µs
A/µs
A/µs
µs
t
q
Max. turn-off time
(with feedback diode)
-
10
µs
2/10
TA329..Q
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Average gate power
Conditions
V
DWM
= 12V, R
L
= 3Ω, T
case
= 25
o
C
V
DWM
= 12V, R
L
= 3Ω, T
case
= 25
o
C
-
-
-
-
Typ.
-
-
-
-
-
-
Max.
4
250
7
10
50
15
Units
V
mA
V
A
W
W
3/10
TA329..Q
CURVES
Notes:
1. VD
≤
600V.
2. VR = DF451 Diode voltage drop.
3. R.C. snubber. C = 0.1µF, R = 33Ω.
4. Double side cooled.
Fig.1 Energy per pulse for sinusoidal pulses.
Notes:
1. VD
≤
600V.
2. VR = DF451 Diode voltage drop.
3. R.C. snubber. C = 0.1µF, R = 33Ω.
4. Double side cooled.
Fig.2 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C.
4/10
TA329..Q
Notes:
1. VD
≤
600V.
2. VR = DF451 Diode voltage drop.
3. R.C. snubber. C = 0.1µF, R = 33Ω.
4. Double side cooled.
Fig.3 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C.
Notes:
1. dI/dt = 100A/µs.
2. VD
≤
600V.
3. VR = DF451 Diode voltage drop.
4. R.C. snubber. C = 0.1µF, R = 33Ω.
5. Double side cooled.
Fig.4 Energy per pulse for trapezoidal pulses
5/10
