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TC1017-2.7VCT

150 mA, tiny cmos ldo with shutdown

器件类别:电源/电源管理    电源电路   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件参数
参数名称
属性值
厂商名称
Microchip(微芯科技)
包装说明
SOT-23, 5 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
最大回动电压 1
0.5 V
最大输入电压
6 V
最小输入电压
3.267 V
JESD-30 代码
R-PDSO-G5
长度
2.9 mm
功能数量
1
端子数量
5
工作温度TJ-Max
125 °C
工作温度TJ-Min
-40 °C
最大输出电流 1
0.15 A
最大输出电压 1
2.767 V
最小输出电压 1
2.632 V
标称输出电压 1
2.7 V
封装主体材料
PLASTIC/EPOXY
封装代码
LSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
调节器类型
FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
筛选级别
TS 16949
座面最大高度
1.45 mm
表面贴装
YES
技术
CMOS
端子形式
GULL WING
端子节距
0.95 mm
端子位置
DUAL
宽度
1.55 mm
文档预览
M
Features
• Space-saving 5-Pin SC-70 and SOT-23
Packages
• Extremely Low Operating Current for Longer
Battery Life: 53 µA (typ.)
• Very Low Dropout Voltage
• Rated 150 mA Output Current
• Requires Only 1 µF Ceramic Output Capacitance
• High Output Voltage Accuracy:
±0.5%
(typ.)
• 10 µsec (typ.) Wake-Up Time from SHDN
• Power-Saving Shutdown Mode: 0.05 µA (typ.)
• Overcurrent and Overtemperature Protection
• Pin Compatible Upgrade for Bipolar Regulators
TC1017
General Description
The TC1017 is a high-accuracy (typically ±0.5%)
CMOS upgrade for bipolar low dropout regulators. It is
offered in a SC-70 or SOT-23 package. The SC-70
package represents a 50% reduced footprint versus
the popular SOT-23 package.
Developed specifically for battery-powered systems,
the TC1017’s CMOS construction consumes only
53 µA typical supply current over the entire 150 mA
operating load range. This can be as much as 60 times
less than the quiescent operating current consumed by
bipolar LDOs.
With small-space requirements and cost in mind, the
TC1017 was developed to be stable over the entire
input voltage and output current operating range using
low value (1 µF ceramic), low equivalent series
resistance output capacitors. Additional integrated
features, such as shutdown, overcurrent and
overtemperature protection, further reduce the board
space and cost of the entire voltage regulating
application.
Key performance parameters for the TC1017 are low
dropout voltage (285 mV typical at 150 mA output
current), low supply current while shutdown (0.05 µA
typical) and fast stable response to sudden input
voltage and load changes.
150 mA, Tiny CMOS LDO With Shutdown
Applications
Cellular/GSM/PHS Phones
Battery Operated Systems
Portable Computers
Medical Instruments
Electronic Games
Pagers
Package Types
SC-70
V
IN
5
V
OUT
4
TC1017
1
2
3
GND
NC
4
SHDN NC
SOT-23
V
OUT
5
TC1017
1
2
3
V
IN
GND SHDN
2003 Microchip Technology Inc.
DS21813B-page 1
TC1017
1.0
ELECTRICAL
CHARACTERISTICS
PIN FUNCTION TABLE
Name
SHDN
NC
GND
V
OUT
V
IN
No connect
Ground terminal
Regulated voltage output
Unregulated supply input
Function
Shutdown control input.
Absolute Maximum Ratings †
Input Voltage ....................................................................6.5V
Output Voltage ......................................... (–0.3) to (V
IN
+ 0.3)
Power Dissipation .......................... Internally Limited (Note 7)
Maximum Voltage On Any Pin ................. V
IN
+ 0.3V to –0.3V
† Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C
Boldface
type specifications apply for junction temperatures of – 40°C to +125°C.
Parameter
Input Operating Voltage
Maximum Output Current
Output Voltage
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
(Note 4)
Dropout Voltage
(Note 5)
Sym
V
IN
I
OUTMAX
V
OUT
TCV
OUT
|(∆V
OUT
/∆V
IN
)| / V
R
|∆V
OUT
| / V
R
V
IN
– V
OUT
Min
2.7
150
V
R
– 2.5%
Typ
V
R
±0.5%
40
0.04
0.38
2
90
180
285
53
0.05
58
10
Max
6.0
V
R
+ 2.5%
0.2
1.5
200
350
500
90
2
Units
V
mA
V
ppm/°C
%/V
%
mV
Note 2
Note 3
(V
R
+ 1V) < V
IN
< 6V
I
L
= 0.1 mA to I
OUTMAX
I
L
= 100 µA
I
L
= 50 mA
I
L
= 100 mA
I
L
= 150 mA
SHDN = V
IH
, I
L
= 0
SHDN = 0V
f =1 kHz, I
L
= 50 mA
V
IN
= 5V, I
L
= 60 mA,
C
IN
= C
OUT
=1 µF,
f = 100 Hz
Test Conditions
Note 1
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Wake-Up Time
(from Shutdown Mode)
Note 1:
2:
3:
I
IN
I
INSD
PSRR
t
WK
µA
µA
dB
µs
The minimum V
IN
has to meet two conditions: V
IN
2.7V and V
IN
(V
R
+ 2.5%) + V
DROPOUT
.
V
R
is the regulator voltage setting. For example: V
R
= 1.8V, 2.7V, 2.8V, 3.0V.
6
(
V O UTMAX
V OUTMIN
) ×
10
-
TCV OUT
= -------------------------------------------------------------------------------------
V OUT
× ∆
T
4:
5:
6:
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see
Section 5.1, “Thermal Considerations”,
for
more details
.
7:
DS21813B-page 2
2003 Microchip Technology Inc.
TC1017
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C
Boldface
type specifications apply for junction temperatures of – 40°C to +125°C.
Parameter
Settling Time
(from Shutdown Mode)
Output Short-Circuit Current
Thermal Regulation
Thermal Shutdown Die
Temperature
Thermal Shutdown Hysteresis
Output Noise
SHDN Input High Threshold
SHDN Input Low Threshold
Note 1:
2:
3:
Sym
t
S
Min
Typ
32
Max
Units
µs
Test Conditions
V
IN
= 5V, I
L
= 60 mA,
C
IN
= 1 µF, C
OUT
=
1 µF, f = 100 Hz
V
OUT
= 0V, Average
Current
Notes 6, 7
I
OUTSC
V
OUT
/P
D
T
SD
∆T
SD
eN
V
IH
V
IL
45
120
0.04
160
10
800
15
mA
V/W
°C
°C
nV/√Hz
%V
IN
%V
IN
f = 10 kHz
V
IN
= 2.7V to 6.0V
V
IN
= 2.7V to 6.0V
The minimum V
IN
has to meet two conditions: V
IN
2.7V and V
IN
(V
R
+ 2.5%) + V
DROPOUT
.
V
R
is the regulator voltage setting. For example: V
R
= 1.8V, 2.7V, 2.8V, 3.0V.
6
(
V
V
) ×
10
O UTMAX
OUTMIN
-
TCV
= -------------------------------------------------------------------------------------
OUT
V OUT
× ∆
T
4:
5:
6:
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see
Section 5.1, “Thermal Considerations”,
for
more details
.
7:
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.7V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT23
Thermal Resistance, 5L-SC-70
θ
JA
θ
JA
255
450
°C/W
°C/W
T
A
T
A
T
A
T
A
-40
-40
-40
-65
+85
+125
+125
+150
°C
°C
°C
°C
Industrial Temperature parts
Extended Temperature parts
Sym
Min
Typ
Max
Units
Conditions
2003 Microchip Technology Inc.
DS21813B-page 3
TC1017
2.0
Note:
TYPICAL PERFORMANCE CHARACTERISTICS
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise noted, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C.
0.40
Dropout Voltage (V)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
25
50
75
100
125
150
Load Current (mA)
0.40
T
A
= +125°C
T
A
= +25°C
T
A
= -40°C
V
OUT
= 2.85V
Dropout Voltage (V)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-40
V
OUT
= 2.85V
I
OUT
= 150 mA
I
OUT
= 100 mA
I
OUT
= 50 mA
-15
10
35
60
85
110
Temperature (°C)
FIGURE 2-1:
Current.
-0.30
Load Regulation (%)
-0.35
-0.40
-0.45
-0.50
-0.55
-0.60
-0.65
-0.70
-40
-15
Dropout Voltage vs. Output
FIGURE 2-4:
Temperature.
160
Short Circuit Current (mA)
140
120
100
80
60
40
20
0
1
2
Dropout Voltage vs.
V
OUT
= 2.85V
I
OUT
= 0-150 mA
V
OUT
= 2.85V
V
IN
= 6.0V
V
IN
= 3.85V
V
IN
= 3.3V
10
35
60
85
110
3
4
5
6
Temperature (°C)
Input Voltage (V)
FIGURE 2-2:
Temperature.
57
Supply Current (µA)
56
55
54
53
52
51
50
3.3
3.6
3.9
T
A
= -40°C
T
A
= +125°C
Load Regulation vs.
FIGURE 2-5:
Input Voltage.
57
Supply Current (µA)
56
55
54
53
52
51
50
-40
-15
10
Short-Circuit Current vs.
V
OUT
= 2.85V
V
OUT
= 2.85V
V
IN
= 6.0V
V
IN
= 3.85V
T
A
= +25°C
V
IN
= 3.3V
4.2
4.5
4.8
5.1
5.4
5.7
6.0
35
60
85
110
Input Voltage (V)
Temperature (°C)
FIGURE 2-3:
Voltage.
Supply Current vs. Input
FIGURE 2-6:
Temperature.
Supply Current vs.
DS21813B-page 4
2003 Microchip Technology Inc.
TC1017
Note:
Unless otherwise noted, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C.
0.40
Dropout Voltage (V)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
25
50
75
100
125
150
Load Current (mA)
0.40
Dropout Voltage (V)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-40
-15
10
35
60
85
110
Temperature (°C)
I
OUT
= 50 mA
I
OUT
= 100 mA
V
OUT
= 3.30V
T
A
= +125°C
T
A
= +25°C
T
A
= -40°C
V
OUT
= 3.30V
I
OUT
= 150 mA
FIGURE 2-7:
Current.
-0.30
Load Regulation (%)
-0.35
-0.40
-0.45
-0.50
-0.55
-0.60
-0.65
-0.70
-40
-15
V
IN
= 4.3V
V
IN
= 4.0V
V
IN
= 6.0V
Dropout Voltage vs. Output
FIGURE 2-10:
Temperature.
60
Supply Current (µA)
59
58
57
56
55
54
53
52
4.0
Dropout Voltage vs.
V
OUT
= 3.30V
I
OUT
= 0-150 mA
V
OUT
= 3.30V
T
A
= +25°C
T
A
= +125°C
T
A
= -40°C
10
35
60
85
110
4.5
5.0
Input Voltage (V)
5.5
6.0
Temperature (°C)
FIGURE 2-8:
Temperature.
60
Supply Current (µA)
59
58
57
56
55
54
53
52
-40
-15
V
IN
= 4.0V
V
IN
= 6.0V
V
IN
= 4.3V
Load Regulation vs.
FIGURE 2-11:
Voltage.
2.869
Output Voltage (V)
2.868
2.867
2.866
2.865
2.864
2.863
2.862
3.3 3.6 3.9
Supply Current vs. Input
V
OUT
= 3.30V
V
OUT
= 2.85V
T
A
= -40°C
T
A
= +25°C
T
A
= +125°C
10
35
60
85
110
4.2 4.5 4.8
5.1 5.4
5.7 6.0
Temperature (°C)
Input Voltage (V)
FIGURE 2-9:
Temperature.
Supply Current vs.
FIGURE 2-12:
Voltage.
Output Voltage vs. Supply
2003 Microchip Technology Inc.
DS21813B-page 5
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参数对比
与TC1017-2.7VCT相近的元器件有:TC1017-2.6VCT、TC1017-1.8VCT、TC1017-2.8VCT、TC1017-2.7VLT、TC1017-2.6VLT。描述及对比如下:
型号 TC1017-2.7VCT TC1017-2.6VCT TC1017-1.8VCT TC1017-2.8VCT TC1017-2.7VLT TC1017-2.6VLT
描述 150 mA, tiny cmos ldo with shutdown 150 mA, tiny cmos ldo with shutdown 150 mA, tiny cmos ldo with shutdown 150 mA, tiny cmos ldo with shutdown 150 mA, tiny cmos ldo with shutdown 150 mA, tiny cmos ldo with shutdown
厂商名称 Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技)
包装说明 SOT-23, 5 PIN SOT-23, 5 PIN SOT-23, 5 PIN SOT-23, 5 PIN SC-70, 5 PIN SC-70, 5 PIN
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大回动电压 1 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V
最大输入电压 6 V 6 V 6 V 6 V 6 V 6 V
最小输入电压 3.267 V 3.165 V 2.7 V 3.37 V 3.267 V 3.165 V
JESD-30 代码 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5
长度 2.9 mm 2.9 mm 2.9 mm 2.9 mm 2 mm 2 mm
功能数量 1 1 1 1 1 1
端子数量 5 5 5 5 5 5
工作温度TJ-Max 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
工作温度TJ-Min -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
最大输出电流 1 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
最大输出电压 1 2.767 V 2.665 V 1.845 V 2.87 V 2.767 V 2.665 V
最小输出电压 1 2.632 V 2.535 V 1.755 V 2.73 V 2.632 V 2.535 V
标称输出电压 1 2.7 V 2.6 V 1.8 V 2.8 V 2.7 V 2.6 V
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LSSOP LSSOP LSSOP LSSOP TSSOP TSSOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, LOW PROFILE, SHRINK PITCH SMALL OUTLINE, LOW PROFILE, SHRINK PITCH SMALL OUTLINE, LOW PROFILE, SHRINK PITCH SMALL OUTLINE, LOW PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
调节器类型 FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
筛选级别 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949
座面最大高度 1.45 mm 1.45 mm 1.45 mm 1.45 mm 1.1 mm 1.1 mm
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.95 mm 0.95 mm 0.95 mm 0.95 mm 0.65 mm 0.65 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
宽度 1.55 mm 1.55 mm 1.55 mm 1.55 mm 1.25 mm 1.25 mm
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