TC4626/TC4627
Power CMOS Drivers With Voltage Tripler
Features
•
•
•
•
•
•
Power Driver With On Board Voltage Booster
Low I
DD
– <4mA
Small Package – 8-Pin PDIP
Under-Voltage Circuitry
Fast Rise-Fall Time – <40nsec @1000pF
Below-Rail Input Protection
Package Type
8-Pin PDIP/CERDIP
C1–
C1+
C2
GND
1
2
3
4
8
V
DD
TC4626
TC4627
7 IN
6 V
BOOST
5 OUT
Applications
• Raises 5V to drive higher – Vgs (ON) MOSFETs
• Eliminates one system power supply
16-Pin SOIC (Wide)
C1–
NC
C1+
NC
1
2
3
4
5
6
7
8
16 V
DD
15 NC
14 NC
Device Selection Table
Part
Number
TC4626COE
TC4626CPA
TC4626EOE
TC4626EPA
TC4626MJA
TC4627COE
TC4627CPA
TC4627EOE
TC4627EPA
TC4627MJA
C2
NC
TC4626
TC4627
12 NC
11 V
BOOST
10 NC
9 OUT
13 IN
Package
16-Pin SOIC (Wide)
8-Pin PDIP
16-Pin SOIC (Wide)
8-Pin PDIP
8-Pin CERDIP
16-Pin SOIC (Wide)
8-Pin PDIP
16-Pin SOIC (Wide)
8-Pin PDIP
8-Pin CERDIP
Temp. Range
-55°C to +125°C
-40°C to +85°C
-40°C to +85°C
0°C to +70°C
0°C to +70°C
-55°C to +125°C
-40°C to +85°C
-40°C to +85°C
0°C to +70°C
0°C to +70°C
NC
GND
General Description
The TC4626/TC4627 are single CMOS high speed
drivers with an on-board voltage boost circuit. These
parts work with an input supply voltage from 4 to 6 volts.
The internal voltage booster will produce a V
BOOST
potential up to 12 volts above V
IN
. This V
BOOST
is not
regulated, so its voltage is dependent on the input V
DD
voltage and output drive loading requirements. An
internal undervoltage lockout circuit keeps the output in
a low state when V
BOOST
drops below 7.8 volts. Output
is enabled when V
BOOST
is above 11.3 volts.
Functional Block Diagram
EXT +
C
1
C1+
C1-
C2
2
1
3
V = 2 x V
DD
Voltage
Booster
Noninverting
TC4627
5
V
DD
8
Clock
Output
V
BOOST
(Unregulated 3 x V
DD
)
6
EXT +
C
3
UV LOCK
EXT +
C
2
In
GND
7
Inverting
TC4626
4
NOTE:
Pin numbers correspond to 8-pin package.
2002 Microchip Technology Inc.
DS21426B-page 1
©
TC4626/TC4627
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings*
Supply Voltage ......................................................6.2V
Input Voltage, Any Terminal
..................................... V
S
+ 0.3V to GND – 0.3V
Package Power Dissipation (T
A
≤
70°C)
PDIP .........................................................730mW
CERDIP....................................................800mW
SOIC ........................................................760mW
Derating Factor
PDIP .......5.6 mW/°C Above 36°C
CERDIP................................................6.0mW/°C
Operating Temperature Range (Ambient)
C Version......................................... 0°C to +70°C
E Version ...................................... -40°C to +85°C
M Version ................................... -55°C to +125°C
Storage Temperature Range .............. -65°C to +150°C
TC4626/TC4627 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
T
A
= +25°C, V
DD
= 5V, C
1
= C
2
= C
3
10µF unless otherwise noted.
Symbol
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
R
O
I
PK
Switching Time
t
R
t
F
t
D1
t
D2
F
MAX
Voltage Booster
R
3
R
2
F
OSC
V
OSC
UV @V
BOOST
V
START
@V
BOOST
V
BOOST
Voltage Tripler Output
Source Resistance
Voltage Doubler Output
Source Resistance
Oscillator Frequency
Oscillator Amplitude Measured
at C1-
Undervoltage Threshold
Start Up Voltage
@V
DD
= 5V
—
—
12
4.5
7.0
10.5
14.6
300
120
—
—
7.8
11.3
—
400
200
28
10
8.5
12
—
Ω
Ω
kHz
V
V
V
V
No Load
R
LOAD
= 10kΩ
I
L
= 10mA, V
DD
= 5V
Rise Time
Fall Time
Delay Time
Delay Time
Maximum Switching Frequency
—
—
—
—
1.0
33
27
35
45
—
40
35
45
55
—
nsec
nsec
nsec
nsec
MHz
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
V
DD
= 5V, V
BOOST
> 8.5V,
Figure 3-1
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
V
BOOST
– 0.025
—
—
—
—
—
—
10
8
1.5
—
0.025
15
10
—
V
V
Ω
Ω
A
I
OUT
= 10mA, V
DD
= 5V
I
OUT
= 10mA, V
DD
= 5V
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
2.4
—
-1
—
—
—
—
0.8
1
V
V
µA
0V
≤
V
IN
≤
V
DRIVE
Parameter
Min
Typ
Max
Units
Test Conditions
©
DS21426B-page 2
2002 Microchip Technology Inc.
TC4626/TC4627
TC4626/TC4627 ELECTRICAL SPECIFICATIONS (CONTINUED)
Symbol
Power Supply
I
DD
V
DD
Symbol
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
High Output Voltage
Low Output Voltage
Output Resistance, High
V
DRIVE
– 0.025
—
—
15
15
R
O
Output Resistance, Low
—
10
10
I
PK
Switching Time
t
R
t
F
t
D1
t
D2
F
MAX
Voltage Booster
R
3
R
2
F
OSC
V
OSC
UV @V
BOOST
V
START
@V
BOOST
V
BOOST
Power Supply
I
DD
V
DD
Power Supply Current
Supply Voltage
—
4.0
—
—
4
6.0
mA
V
V
IN
= LOW or HIGH
Voltage Boost Output
Source Resistance
Voltage Doubler Output
Source Resistance
Oscillator Frequency
Oscillator Amplitude
Measured at C1-
Undervoltage Threshold
Start Up Voltage
@V
DD
= 5V
—
—
5
4.5
7.0
10.5
14.6
400
170
—
—
7.8
11.3
—
500
300
50
10
8.5
12
—
Ω
Ω
kHz
V
V
V
V
No Load
R
LOAD
= 10kΩ
I
L
= 10mA, V
DD
= 5V
Rise Time
Fall Time
Delay Time
Delay Time
Maximum Switching Frequency
—
—
—
—
750
—
—
—
—
—
55
50
60
70
—
nsec
nsec
nsec
nsec
kHz
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
V
DD
= 5V, V
BOOST
> 8.5V,
Figure 3-1
Peak Output Current
—
1.5
13
15
—
A
20
25
Ω
—
—
—
0.025
V
V
Ω
I
OUT
= 10mA, V
DD
= 5V
C & E Version (T
A
= 70°C or 85°C)
M Version (T
A
= 125°C)
I
OUT
= 10mA, V
DD
= 5V
C & E Version (T
A
= 70°C or 85°C)
M Version (T
A
= 125°C)
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
2.4
—
-10
—
—
—
—
0.8
1
V
V
µA
0V
≤
V
IN
≤
V
BOOST
Power Supply Current
Supply Voltage
—
4.0
—
—
2.5
6.0
mA
V
V
IN
= LOW or HIGH
Parameter
Min
Typ
Max
Units
Test Conditions
Electrical Characteristics:
Over operating temperature range, V
DD
= 5V, C
1
= C
2
= C
3
10µF unless otherwise noted.
Parameter
Min
Typ
Max
Units
Test Conditions
2002 Microchip Technology Inc.
DS21426B-page 3
©
TC4626/TC4627
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
Pin No.
(8-Pin PDIP,
CERDIP)
1
2
3
4
5
6
7
8
PIN FUNCTION TABLE
Symbol
C1-
C1+
C2
GND
OUT
V
BOOST
IN
V
DD
Ground.
Description
Pin No.
(16-Pin SOIC
Wide)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Symbol
C1-
NC
C1+
NC
C2
NC
NC
GND
OUT
NC
V
BOOST
NC
IN
NC
NC
V
DD
No connect.
No connect.
No connect.
No connect.
No connect.
No connect.
Ground.
No connect.
No connect.
Description
©
DS21426B-page 4
2002 Microchip Technology Inc.
TC4626/TC4627
3.0
APPLICATIONS INFORMATION
INVERTING DRIVER
SWITCHING TIME
V
BOOST
FIGURE 3-1:
FIGURE 3-2:
NONINVERTING DRIVER
SWITCHING TIME
V
BOOST
C
3
10µF
6
Input
C
1
10µF
1
3
C
2
10µF
7
2
C1+
C1-
5
0.1µF Ceramic
C
3
10µF
6
7
2
C
1
10µF
1
C1+
C1-
5
0.1µF Ceramic
Output
C
L
= 1000pF
Input
Output
C
L
= 1000pF
C
2
TC4626
4
8
V
DD
= 5V
3
C
2
10µF
C
2
TC4627
4
8
V
DD
= 5V
+5V
Input
0V
V
BOOST
Output
0V
Input: 100kHz,
square wave,
t
RISE
= t
FALL
≤
10nsec
10%
10%
t
D1
t
F
90%
90%
+5V
Input
90%
t
D2
0V
t
R
90%
10%
90%
90%
V
BOOST
t
D1
Output
t
D2
t
R
t
F
10%
10%
0V
10%
Input: 100kHz,
square wave,
t
RISE
= t
FALL
≤
10nsec
2002 Microchip Technology Inc.
DS21426B-page 5
©
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