TC74HCU04AP/AF/AFT
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HCU04AP,TC74HCU04AF,TC74HCU04AFT
Hex Inverter
The TC74HCU04A is a high speed CMOS INVERTER fabricated
with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
Since the internal circit is composed of a single stage inverter, it
can be used in analog applications such as crystal oscllators.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
TC74HCU04AP
Features
•
•
•
•
•
•
•
•
High speed: t
pd
=
4 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
=
1
μA
(max) at Ta
=
25°C
High noise immunity: V
NIH
=
V
NIH
=
10% V
CC
(min)
Output drive capability: 10 LSTTL loads
Symmetrical output impedance: |I
OH
|
=
I
OL
=
4 mA (min)
Balanced propagation delays: t
pLH
∼
t
pHL
−
Wide operating voltage range: V
CC
(opr)
=
2 to 6 V
Pin and function compatible with 74LS04
TC74HCU04AFT
TC74HCU04AF
Pin Assignment
Weight
DIP14-P-300-2.54
: 0.96 g (typ.)
SOP14-P-300-1.27A
: 0.18 g (typ.)
TSSOP14-P-0044-0.65A : 0.06 g (typ.)
1
2012-02-29
TC74HCU04AP/AF/AFT
IEC Logic Symbol
Truth Table
A
L
H
Y
H
L
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 7
−0.5
to V
CC
+
0.5
−0.5
to V
CC
+
0.5
±20
±20
±25
±50
500 (DIP) (Note 2)/180 (SOP/TSSOP)
−65
to 150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta
= −40
to 65°C. From Ta
=
65 to 85°C a derating factor of
−10
mW/°C shall be
applied until 300 mW.
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Symbol
V
CC
V
IN
V
OUT
T
opr
Rating
2 to 6
0 to V
CC
0 to V
CC
−40
to 85
Unit
V
V
V
°C
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
2
2012-02-29
TC74HCU04AP/AF/AFT
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Test Condition
V
CC
(V)
2.0
High-level input
voltage
V
IH
⎯
4.5
6.0
2.0
Low-level input
voltage
V
IL
⎯
4.5
6.0
2.0
High-level output
voltage
V
IN
=
V
IL
V
OH
V
IN
=
GND
I
OH
= −4
mA
I
OH
= −5.2
mA
I
OL
=
20
μA
I
OL
=
4 mA
I
OL
=
5.2 mA
I
OH
= −20 μA
4.5
6.0
4.5
6.0
2.0
Low-level output
voltage
V
IN
=
V
IH
V
OL
V
IN
=
V
CC
Input leakage
current
Quiescent supply
current
I
IN
I
CC
4.5
6.0
4.5
6.0
6.0
6.0
Min
1.7
3.6
4.8
⎯
⎯
⎯
1.8
4.0
5.5
4.18
5.68
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Ta
=
25°C
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
2.0
4.5
5.9
4.31
5.80
0.0
0.0
0.1
0.17
0.18
⎯
⎯
Max
⎯
⎯
⎯
0.3
0.9
1.2
⎯
⎯
⎯
⎯
⎯
0.2
0.5
0.5
0.26
0.26
±0.1
1.0
Ta
=
−40
to 85°C
Min
1.7
3.6
4.8
⎯
⎯
⎯
1.9
4.0
5.5
4.13
5.63
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
0.3
0.9
1.2
⎯
⎯
⎯
⎯
⎯
0.2
0.5
0.5
0.33
0.33
±1.0
10.0
μA
μA
V
V
V
V
Unit
V
IN
=
V
CC
or GND
V
IN
=
V
CC
or GND
AC Characteristics
(C
L
=
15 pF, V
CC
=
5 V, Ta
=
25°C, input: t
r
=
t
f
=
6 ns)
Characteristics
Output transition time
Symbol
t
TLH
t
THL
t
pLH
t
pHL
Test Condition
⎯
Min
⎯
Typ.
4
Max
8
Unit
ns
Propagation delay time
⎯
⎯
4
8
ns
3
2012-02-29
TC74HCU04AP/AF/AFT
AC Characteristics
(C
L
=
50 pF, input: t
r
=
t
f
=
6 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
t
TLH
t
THL
2.0
⎯
4.5
6.0
2.0
⎯
4.5
6.0
⎯
⎯
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Ta
=
25°C
Typ.
30
8
7
18
6
5
9
13
Max
75
15
13
60
12
10
15
⎯
Ta
=
−40
to 85°C
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
95
19
16
75
15
13
15
⎯
pF
pF
ns
ns
Unit
Output transition time
Propagation delay
time
Input capacitance
Power dissipation
capacitance
t
pLH
t
pHL
C
IN
C
PD
(Note)
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC
(opr)
=
C
PD
½V
CC
½f
IN
+
I
CC
/6 (per gate)
4
2012-02-29
TC74HCU04AP/AF/AFT
Package Dimensions
Weight: 0.96 g (typ.)
5
2012-02-29
stm32/stm8
