首页 > 器件类别 > 传感器 > 磁性传感器

TCS40DPR,LF

数字输出磁传感器

器件类别:传感器    磁性传感器   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

下载文档
文档预览
TCS40DPR
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TCS40DPR
Digital Output Magnetic Sensor
Feature
Push-Pull Output
South-Pole and North-Pole Detection
SON3-P-0203-1.90S
SOT-23F
Weight: 11.0 mg (typ.)
Marking
Pin Assignment
(Top View)
GND
3
Function Table
Magnetic Flux
Density
B
ON
B
OFF
Output
L
H
PA8
1
2
V
CC
(Note1)
V
OUT
Note 1:
A 0.47
μF
capacitor should be connected near the device. This
condition will not guarantee successful operation. Check the
performance thorough evaluation using the actual application to set
the condition.
Start of commercial production
2015-05
1
2015-04-03
TCS40DPR
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Supply Voltage
Output Voltage
Output Diode Current
Output Current
Vcc/GND Current
Power Dissipation
Storage Temperature Range
Symbol
V
CC
V
OUT
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 6.0
−0.5
to 6.0
±10
±5
±10
1 (Note 2)
−65
to 150
Unit
V
V
mA
mA
mA
W
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: Mounted on a FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Operating Ranges
Characteristics
Supply Voltage
Output Voltage
Output Current
Operating Temperature
Symbol
V
CC
V
OUT
I
OH
/ I
OL
T
opr
Rating
2.3 to 5.5
0 to V
CC
±1.0
−40
to 85
Unit
V
V
mA
°C
2
2015-04-03
TCS40DPR
DC Characteristics
(Ta = 25°C)
Characteristics
Symbol
Condition
V
CC
(V)
2.3
2.5
High Level
V
OH
I
OH
=
−1.0
mA
3.3
3.6
5.0
Output Voltage
2.3
2.5
Low Level
V
OL
I
OL
= 1.0 mA
3.3
3.6
5.0
2.3
Average
Current
Supply Current
2.3
Operating
Current
I
CC
ON
Peak current
(Note 3, Fig. A)
2.5
3.3
5.0
Operating Frequency
f
opr
(Fig. A)
2.3 to 5.0
I
CC
Current at pulse
driving
(Note 3, Fig. A)
2.5
3.3
5.0
Min
2.0
2.2
2.9
3.2
4.5
Typ.
7.3
8.5
12.8
19.0
0.7
0.8
1.2
1.6
25
Max
0.23
0.25
0.33
0.36
0.50
13.2
1.1
Hz
mA
μA
V
Unit
Note 3: Supply current is pulsed periodically by internal circuit.
Magnetic Characteristics
(Ta = 25°C)
Characteristics
Symbol
B
ON
S
|B
ON
N|
Magnetic
Flux
Density, B
Releasing Point
Hysteresis
B
OFF
S
|B
OFF
N|
B
H
Condition
(Note 4, Fig. B)
When output logic
turns High to Low
When output logic
turns Low to High
|B
ON
- B
OFF
|
V
CC
(V)
2.3 to 3.6
5.0
2.3 to 3.6
5.0
2.3 to 5.0
Min
0.9
0.4
Typ.
3.4
2.8
2.0
1.5
1.4
Max
4.4
4.4
mT*
Unit
Operating Point
*1 mT = 10 Gauss
Note 4: Uniform magnetic field perpendicularly to the magnetic sensor.
3
2015-04-03
TCS40DPR
Note: Direction of Magnetic field
Magnetic Field, B
Fig. A: I
CC
Characteristics
I
CC
1/fopr (fopr = 25 Hz)
Fig. B: Operating Characteristics
V
OUT
V
OH
Operating Current
Average Current
B
H
B
H
V
OL
North-Pole
Time
B
ON
N
B
OFF
N
0 B
OFF
S
B
ON
S
South-Pole
Magnetic Flux Density
4
2015-04-03
TCS40DPR
Package Dimension
SON3-P-0203-1.90S
Unit: mm
Weight: 11.0 mg (Typ.)
5
2015-04-03
查看更多>
参数对比
与TCS40DPR,LF相近的元器件有:TCS40DPRLF(T、TCS40DPR。描述及对比如下:
型号 TCS40DPR,LF TCS40DPRLF(T TCS40DPR
描述 数字输出磁传感器 Analog Circuit Magnetic Sensors
厂商名称 - Toshiba(东芝) Toshiba(东芝)
包装说明 - SOF, FL3,.1 SOF, FL3,.1
Reach Compliance Code - unknown unknow
模拟集成电路 - 其他类型 - ANALOG CIRCUIT ANALOG CIRCUIT
JESD-30 代码 - R-PDSO-F3 R-PDSO-F3
长度 - 2.9 mm 2.9 mm
信道数量 - 1 1
功能数量 - 1 1
端子数量 - 3 3
最高工作温度 - 85 °C 85 °C
最低工作温度 - -40 °C -40 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 - SOF SOF
封装等效代码 - FL3,.1 FL3,.1
封装形状 - RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE
座面最大高度 - 0.88 mm 0.88 mm
最大供电电压 (Vsup) - 5.5 V 5.5 V
最小供电电压 (Vsup) - 2.3 V 2.3 V
标称供电电压 (Vsup) - 2.5 V 2.5 V
表面贴装 - YES YES
技术 - CMOS CMOS
温度等级 - INDUSTRIAL INDUSTRIAL
端子形式 - FLAT FLAT
端子节距 - 0.95 mm 0.95 mm
端子位置 - DUAL DUAL
宽度 - 1.8 mm 1.8 mm
我制作的会唱歌的STM32实验板
可以用过PWM控制无源蜂鸣器唱歌: 我制作的会唱歌的STM32实验板 ...
pcwe stm32/stm8
很郁闷的问题,WinCE、Platform Builder达人请进来,多提提建议,谢谢!
本人买了一块FriendlyARM(友善之臂)的板子,用VS2005开发了一个程序要运行在板子上...
sibyl WindowsCE
DSP内存空间不足的问题
因为DSP中RAM主要是用来存储数据,但是当使用FFT算法,小波算法等时会遇见数据量太大,内部RAM...
Jacktang 微控制器 MCU
加速度的积分成位移 误差巨大问题
加速度积分为位移, 得到的值,小于正常的值一个数量级。仔细检查过运算公式,没错,但不明白怎么会出现这...
大家都是好朋友 微控制器 MCU
Android HIDL 有熟悉的吗?
Android HIDL 有熟悉的吗? 推荐一个好的学习资源。 Android HIDL 有熟悉...
13620203064 移动便携
线性光藕隔离放大器
线性光藕隔离放大器 线性光藕隔离放大器 ...
fighting 模拟电子
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消