Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3PN package
・Complement
to type TIP33/33A/33B/33C
・DC
current gain h
FE
=40(Min)@I
C
=1.0A
APPLICATIONS
・Designed
for use in general purpose
power amplifier and switching applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
TIP34/34A/34B/34C
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
固电
Collector-base voltage
导½
半
PARAMETER
CONDITIONS
TIP34
TIP34A
TIP34B
V
CEO
HA
INC
Collector current
ES
NG
TIP34C
TIP34
TIP34A
TIP34B
TIP34C
Open emitter
MIC
E
DUC
ON
VALUE
-40
OR
T
UNIT
-60
V
-80
-100
-40
-60
V
-80
-100
Collector-emitter voltage
Open base
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Open collector
-5
-10
-15
-3
V
A
A
A
W
℃
℃
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
80
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.56
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
TIP34
TIP34A
I
C
=-30mA ;I
B
=0
TIP34B
TIP34C
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Base-emitter on voltage
TIP34/34A
TIP34B/34C
TIP34
I
C
=-3A ;I
B
=-0.3A
I
C
=-10A; I
B
=-2.5A
I
C
=-3A ; V
CE
=-4V
I
C
=-10A ; V
CE
=-4V
V
CE
=-30V; I
B
=0
V
CE
=-60V; I
B
=0
V
CE
=-40V;V
EB
=0
V
CE
=-60V;V
EB
=0
V
CE
=-80V;V
EB
=0
CONDITIONS
TIP34/34A/34B/34C
MIN
-40
-60
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
-80
-100
-1.0
-4.0
-1.6
-3.0
V
V
V
V
I
CEO
Collector
cut-off current
I
CES
固电
导½
半
TIP34A
TIP34B
TIP34C
I
EBO
h
FE-1
h
FE-2
f
T
CH
IN
DC current gain
DC current gain
Collector
cut-off current
ANG
MIC
E SE
V
CE
=-100V;V
EB
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-3A ; V
CE
=-4V
OR
CT
NDU
O
-0.7
-0.4
-1.0
40
20
3.0
100
mA
mA
Emitter cut-off current
mA
Transition frequency
I
C
=-0.5A ; V
CE
=-10V;f=1MHz
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
TIP34/34A/34B/34C
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
