Insert xxx value corresponding to protection voltages of 070, 080, 090, etc.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
The TISP4xxxL3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are in an SMAJ
(JEDEC DO-214AC with J-bend leads) plastic package. These devices are supplied in embossed tape reel carrier pack. For alternative voltage
and holding current values, consult the factory. For higher rated impulse currents, the 50 A 10/1000 TISP4xxxM3AJ series in SMA and the 100
A 10/1000 TISP4xxxH3BJ series in SMB are available.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
‘4070
‘4080
‘4090
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4290
‘4320
‘4350
‘4360
‘4395
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
20 ms (50 Hz) full sine wave
1 s (50 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Symbol
Value
±
58
±
65
±
70
±100
±120
±135
±145
±160
±180
±200
±230
±240
±275
±290
±320
125
100
65
50
50
40
30
18
7
1.6
Unit
Repetitive peak off-state voltage, (see Note 1)
V
DRM
V
I
TSP
A
I
TSM
A
Junction temperature
T
J
-40 to +150
°C
Storage temperature range
T
stg
-65 to +150
°C
NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/°C.
2. Initially, the TISP4xxxL3 must be in thermal equilibrium with T
J
= 25
°C.
3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25
°
C.
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Recommended Operating Conditions
Component
series resistor for FCC Part 68, 10/560 type A surge survival
series resistor for FCC Part 68, 9/720 type B surge survival
R
S
series resistor for GR-1089-CORE first-level and second-level surge survival
series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival
series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
Min
12
0
23
0
7
Typ
Max
Unit
Ω
Ω
Ω
Ω
Ω
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Test Conditions
V
D
= V
DRM
T
A
= 25
°C
T
A
= 85
°C
‘4070
‘4080
‘4090
‘4125
‘4145
‘4165
‘4180
V
(BO)
Breakover voltage
dv/dt =
50 V/ms, R
SOURCE
= 300
Ω
‘4220
‘4240
‘4260
‘4290
‘4320
‘4350
‘4360
‘4395
I
(BO)
I
H
dv/dt
Breakover current
Holding current
Critical rate of rise of
off-state voltage
dv/dt =
±
0 V/ms,
R
SOURCE
= 300
Ω
±0.15
±5
I
T
=
±5
A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
‘4070, V
D
=
±
52V
‘4080, V
D
=
±
59V
‘4090, V
D
=
±
63V
‘4125, V
D
=
±90
V
‘4145, V
D
=
±108
V
‘4165, V
D
=
±122
V
‘4180, V
D
=
±131
V
I
D
Off-state current
‘4220, V
D
=
±144
V
‘4240, V
D
=
±162
V
‘4260, V
D
=
±180
V
‘4290, V
D
=
±207
V
‘4320, V
D
=
±216
V
‘4350, V
D
=
±248
V
‘4360, V
D
=
±261
V
‘4395, V
D
=
±288
V
I
D
Off-state current
V
D
=
±50
V
±10
μA
±2
μA
Min
Typ
Max
±5
±10
±70
±80
±90
±125
±145
±165
±180
±220
±240
±260
±290
±320
±350
±360
±395
±0.
±0.60
A
A
kV/μs
V
Unit
μA
I
DRM
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)
Parameter
Test Conditions
f = 1 MHz, V
d
= 1 V rms, V
D
=
±1
V
4070 thru ‘4090
‘4125 thru ‘4220
‘4240 thru ‘4395
‘4070 thru ‘4090
‘4125 thru ‘4220
‘4240 thru ‘4395
Min
Typ
53
40
33
25
18
14
Max
64
48
40
30
22
17
Unit
C
off
Off-state capacitance
f = 1 MHz, V
d
= 1 V rms, V
D
=
±50
V
pF
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
°C,
(see Note 75)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25
°C
52
Min
Typ
Max
115
°C/W
Unit
R
θ
JA
Junction to free air thermal resistance
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Parameter Measurement Information
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
V
(BO)
I
(BO)
-v
I
DRM
V
DRM
V
D
I
D
I
D
V
D
V
DRM
I
DRM
+v
I
(BO)
I
H
V
(BO)
V
T
I
T
I
TSM
I
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAAB
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
