TLMD310.
Vishay Semiconductors
Standard SMD LED PLCC-2
FEATURES
• SMD LEDs with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement
e3
equipment
• EIA and ICE standard package
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
Vmax
/I
Vmin
≤
2.0, optional
≤
1.6
• Lead (Pb)-free device
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
• Indicator and backlight for battery driven equipment
• Small indicator for outdoor applications
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
19225
DESCRIPTION
These new devices have been designed to meet the
increasing demand for surface mounting technology.
This device is used for outdoor or for low power
applications.
The package of the TLMD310. is the PLCC-2
(equivalent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-2
• Product series: standard
• Angle of half intensity: ± 60°
PARTS TABLE
PART
TLMD3100
TLMD3101
TLMD3105
COLOR, LUMINOUS INTENSITY
Red, I
v
> 20 mcd (typ.)
Red, I
V
= (16 to 50) mcd
Red, I
V
= (10 to 32) mcd
TECHNOLOGY
GaAIAs on GaAs
GaAIAs on GaAs
GaAIAs on GaAs
Document Number 83037
Rev. 1.9, 12-Sep-07
www.vishay.com
1
TLMD310.
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
1)
TLMD310.
PARAMETER
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
t
≤
5s
mounted on PC board
(pad size > 16 mm
2
)
t
p
≤
10
μs
T
amb
≤
60 °C
TEST CONDITION
SYMBOL
V
R
I
F
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
6
30
0.5
100
100
- 40 to + 100
- 55 to + 100
260
400
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
Note:
1)
T
amb
= 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS
1)
TLMD310., RED
PARAMETER
Luminous intensity
3)
Luminous intensity
2)
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
amb
= 25 °C, unless otherwise specified
2)
in one packing unit I
Vmax
/I
Vmin
≤
1.6
3)
TEST CONDITION
I
F
= 10 mA
I
F
= 10 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 20 mA
I
R
= 10
μA
V
R
= 0, f = 1 MHz
PART
TLMD3100
TLMD3101
TLMD3105
SYMBOL
I
V
I
V
I
V
I
V
λ
d
λ
p
ϕ
V
F
V
R
C
j
MIN
10
16
10
TYP.
20
MAX
50
32
UNIT
mcd
mcd
mcd
mcd
nm
nm
deg
2
648
650
± 60
1.8
6
15
15
2.2
V
V
pF
in one packing unit I
Vmax
/I
Vmin
≤
2.0
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2
Document Number 83037
Rev. 1.9, 12-Sep-07
TLMD310.
Vishay Semiconductors
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
0°
10°
20°
30°
100
I
V
rel
- Relative Luminous Intensity
125
P - Power Dissipation (mW)
V
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
75
50
25
0
0
95 10904
20
40
60
80
100
95 10319
T
amb
- Ambient Temperature (°C)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
60
100
red
I
F
- Forward Current (mA)
I
F
- Forward Current (mA)
50
40
30
20
10
0
0
20
40
60
80
100
10
1
1
95 10014
1.5
2
2.5
3
95 10905
T
amb
- Ambient Temperature (°C)
V
F
- Forward
Voltage
(V)
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 5.
10000
I
V
rel
- Relative Luminous Intensity
t
p
/T = 0.005
T
amb
< 60 °C
0.01
0.02
0.05
2.0
red
1.6
I
F
- Forward Current (mA)
1000
1.2
100
0.2
0.5
DC
0.8
0.4
0
10
0.1
1
0.01
95 9985
0.1
1
10
100
95 10015
0
20
40
60
80
100
t
p
- Pulse Length (ms)
T
amb
- Ambient Temperature (°C)
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83037
Rev. 1.9, 12-Sep-07
www.vishay.com
3
TLMD310.
Vishay Semiconductors
2.4
I
V
rel
- Relative Luminous Intensity
2.0
1.6
1.2
0.8
0.4
I
FAV
= 10 mA, const.
0
10
95 10262
1.2
I
V
rel
- Relative Luminous Intensity
red
red
1.0
0.8
0.6
0.4
0.2
0
600
20
0.5
50
0.2
100
0.1
200
0.05
500
0.02
I
F
(mA)
t
P
/T
620
640
660
680
700
1
95 10018
-
Wavelength
(nm)
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 9. Relative Intensity vs. Wavelength
10
I
V
rel
- Relative Luminous Intensity
red
1
0.1
0.01
0.1
95 10016
1
10
100
I
F
- Forward Current (mA)
Figure 8. Relative Luminous Intensity vs. Forward Current
PACKAGE DIMENSIONS
in millimeters
Mounting Pad Layout
1.2
area covered
with
solder resist
2.6 (2.8)
4
1.6 (1.9)
20415
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4
Document Number 83037
Rev. 1.9, 12-Sep-07
TLMD310.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83037
Rev. 1.9, 12-Sep-07
www.vishay.com
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