Supertex inc.
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
►
Low threshold (1.6V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TN0104
General Description
Applications
►
►
►
►
►
►
►
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces
a device with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Part Number
TN0104N3-G
TN0104N3-G P002
TN0104N3-G P003
TN0104N3-G P005
TN0104N3-G P013
TN0104N3-G P014
TN0104N8-G
TO-243AA (SOT-89)
Product Summary
Packing
1000/Bag
BV
DSX
/BV
DGX
40V
Package Option
TO-92
R
DS(ON)
(max)
(min)
I
DSS
1.8Ω
2.0A
TO-92
2000/Reel
Pin Configuration
DRAIN
2000/Reel
SOURCE
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
DRAIN
SOURCE
DRAIN
GATE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
TO-92
GATE
TO-243AA (SOT-89)
Product Marking
SiTN
0 10 4
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92
TN1LW
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Package may or may not include the following marks: Si or
Typical Thermal Resistance
Package
TO-92
TO-243AA (SOT-89)
Doc.# DSFP-TN0104
C080813
θ
ja
132
O
C/W
133 C/W
O
W = Code for Week Sealed
= “Green” Packaging
TO-243AA (SOT-89)
Package may or may not include the following marks: Si or
Supertex inc.
www.supertex.com
TN0104
Thermal Characteristics
Package
TO-92
TO-243AA (SOT-89)
(continuous)
I
D
†
(pulsed)
I
D
Power Dissipation
@T
C
= 25
O
C
I
DR
†
450mA
630mA
I
DRM
2.40A
2.90A
450mA
630mA
2.40A
2.90A
1.0W
1.6W
‡
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡
T
A
= 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
= 25
O
C unless otherwise specified)
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
Parameter
A
Min
40
0.6
-
-
-
Typ
-
-
-3.8
0.1
-
-
0.35
1.1
2.6
5.0
2.3
1.5
-
0.7
450
-
-
-
3.0
7.0
6.0
5.0
1.2
-
300
Max
-
1.6
-5.0
100
1.0
100
-
-
-
-
2.5
1.8
2.0
1.0
-
70
50
15
5.0
8.0
9.0
8.0
1.8
2.0
-
Units
V
V
nA
µA
Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 500µA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= 3.0V, V
DS
= 20V
V
GS
= 5.0V, V
DS
= 20V
V
GS
= 10V, V
DS
= 20V
V
GS
= 3.0V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 250mA
V
GS
= 10V, I
D
= 1.0A
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
-
-
I
D(ON)
On-state drain current
0.5
2.0
Both packages
TO-92
TO-243AA
-
-
-
-
-
340
-
-
-
-
-
-
-
TO-92
TO-243AA
-
-
-
A
R
DS(ON)
Static drain-to-source
on-state resistance
Ω
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage
drop
Reverse recovery time
%/
O
C
V
GS
= 10V, I
D
= 1.0A
mmho V
DS
= 20V, I
D
= 500mA
pF
V
GS
= 0V,
V
DS
= 20V,
f = 1.0MHz
V
DD
= 20V,
I
D
= 1.0A,
R
GEN
= 25Ω
V
ns
V
GS
= 0V, I
SD
= 1.0A
V
GS
= 0V, I
SD
= 0.5A
V
GS
= 0V, I
SD
= 1.0A
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Doc.# DSFP-TN0104
C080813
2
Supertex inc.
www.supertex.com
TN0104
Switching Waveforms and Test Circuit
10V
90%
10%
t
(ON)
VDD
Pulse
Generator
R
L
OUTPUT
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
f
10%
90%
90%
R
GEN
t
d(ON)
VDD
OUTPUT
0V
10%
INPUT
D.U.T.
Doc.# DSFP-TN0104
C080813
3
Supertex inc.
www.supertex.com
TN0104
Typical Performance Curves
3.75
Output Characteristics
3.75
Saturation Characteristics
3.00
3.00
V
GS
= 10V
I
D
(amperes)
8V
1.50
I
D
(amperes)
2.25
2.25
V
GS
= 10V
8V
1.50
6V
6V
0.75
0.75
4V
4V
2V
0
0
2V
10
20
30
40
0
0
2
4
6
8
10
V
DS
(volts)
V
DS
(volts)
0.75
Transconductance vs. Drain Current
V
DS
= 25V
Power Dissipation vs. Case Temperature
5
(T
A
= 25
O
C)
0.60
T
A
= -55
O
C
4
G
FS
(siemens)
0.30
T
A
= 125
O
C
P
D
(watts)
0.45
T
A
= 25
O
C
3
2
TO-243AA
0.15
1
TO-92
0
0
0.5
1.0
1.5
2.0
2.5
0
0
25
50
75
100
125
150
I
D
(amperes)
T
C
( C)
O
10
Maximum Rated Safe Operating Area
Thermal Resistance (normalized)
1.0
Thermal Response Characteristics
0.8
I
D
(amperes)
0.0
TO-92 (DC)
TO-243AA (DC)
0.6
TO-243AA
P
D
= 1.6W
T
A
= 25
O
C
0.4
0.1
0.2
0.01
0.1
(T
A
= 25
O
C)
1.0
10
100
TO-92
P
D
= 1.0W
T
C
= 25
O
C
0.01
0.1
1.0
10
0
0.001
V
DS
(volts)
t
P
(seconds)
Doc.# DSFP-TN0104
C080813
4
Supertex inc.
www.supertex.com
TN0104
Typical Performance Curves
(cont.)
1.3
BV
DSS
Variation with Temperature
10
On-Resistance vs. Drain Current
V
GS
= 5.0V
1.2
8
BV
DSS
(normalized)
R
DS(ON)
( )
1.1
6
1.0
4
V
GS
= 10V
0.9
2
0.8
-50
0
50
100
150
0
0
1
2
T
j
( C)
O
I
D
(amperes)
3.0
Transfer Characteristics
V
DS
= 25V
T
A
= -55
O
C
25
O
C
V
(th)
and R
DS
Variation with Temperature
1.4
1.4
2.4
1.2
1.2
V
GS(th)
(normalized)
1.8
1.0
125 C
O
R
DS(ON)
@ 5.0V, 0.25A
1.0
1.2
0.8
V
(th)
@ 0.5mA
0.8
0.6
0.6
0.6
0
0
2
4
6
8
10
0.4
-50
0
50
100
0.4
150
V
GS
(volts)
T
j
(
O
C)
10
Capacitance vs. Drain-to-Source Voltage
100
Gate Drive Dynamic Characteristics
V
DS
= 10V
f = 1MHz
8
75
55pF
40V
C (picofarads)
50
C
ISS
V
GS
(volts)
6
4
25
2
C
OSS
0
C
RSS
0
10
20
30
40
0
0.50
50pF
0.65
0.80
0.95
1.10
1.25
V
DS
(volts)
Q
G
(nanocoulombs)
Doc.# DSFP-TN0104
C080813
5
Supertex inc.
www.supertex.com
R
DS(ON)
(normalized)
I
D
(amperes)
RF/无线
