TN2540
Low Threshold N-Channel
Enhancement-Mode Vertical DMOS FET
Features
►
►
►
►
Low threshold — 2.0V max
High input impedance
Low input capacitance — 125pF max
Fast switching speeds
General Description
The Supertex TN2540 is a low threshold enhancement-
mode transistor that utilizes an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors,
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
►
Low ON-resistance
►
Free from secondary breakdown
►
Low input and output leakage
►
Complementary N and P-channel devices
Applications
►
►
►
►
►
►
►
Logic level interfaces — ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic devices
Analog switches
General purpose line drivers
Telecom switches
Switching Waveforms and Test Circuit
V
DD
10V
90%
INPUT
0V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
L
OUTPUT
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
TN2540
Ordering Information
Package Options
Device
TO-92
TN2540
TN2540N3-G
TO-243AA
(SOT-89)
TN2540N8-G
Die*
TN2540ND
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
V
GS(th)
(max)
(V)
I
D(ON)
(min)
(A)
400
12
2.0
1.0
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Drain to source voltage
Drain to gate voltage
Gate to source voltage
Operating and storage temperature
Soldering temperature*
* Distance of 1.6mm from case for 10 seconds.
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
300°C
S
G
D
GATE
DRAIN
(top view)
SINK
TO-92
(front view)
TO-243AA (SOT-89)
Product Marking
TN
2540
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
TN5DW
W = Code for week sealed
TO-243AA (SOT-89) (N8)
Thermal Characteristics
I
D
Package
TO-92
TO-243AA
(SOT-89)
(continuous)
(mA)
I
D
(pulsed)
(A)
Power Dissipation
@T
A
= 25
O
C
(W)
O
θ
jc
( C/W)
O
θ
ja
( C/W)
I
DR
†
(
mA)
175
260
I
DRM
(
A)
2.0
1.8
175
260
2.0
1.8
1.0
1.6
‡
125
15
170
78
‡
Notes:
† I
D
(continuous) is limited by max rated T
J
.
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
2
TN2540
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
Drain-to-source breakdown voltage
Gate threshold voltage
V
GS(th)
change with temperature
Gate body leakage current
400
0.6
-
-
-
-
-
-2.5
-
-
-
0.5
1.0
8.0
8.0
-
200
95
20
10
-
-
-
-
-
300
-
2.0
-4.0
100
10
1.0
-
V
V
mV/
O
C
nA
µA
mA
V
GS
= 0V, I
D
= 100µA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
I
DSS
Zero gate voltage drain current
-
0.3
I
D(ON)
ON-state drain current
0.75
Static drain-to-source ON-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
-
-
-
125
-
-
-
-
-
-
-
-
-
-
12
A
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Ω
12
0.75
-
125
70
25
20
15
ns
25
20
1.8
-
V
ns
pF
%/
O
C
mmho
V
GS
= 4.5V, I
D
= 150mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 25V, I
D
= 100mA
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 1.0A,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 200mA
V
GS
= 0V, I
SD
= 1.0A
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
3
TN2540
Typical Performance Curves
°
°
°
°
°
4
TN2540
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.1
50
On-Resistance vs. Drain Current
40
V
GS
= 4.5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
V
GS
= 10V
30
1.0
20
10
0.9
-50
0
50
100
150
0
0
0.4
0.8
1.2
1.6
2.0
T
j
(
°
C)
Transfer Characteristics
1.5
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.5
V
DS
= 25V
1.2
1.4
R
DS(ON)
@ 10V, 0.5A
2.0
1.2
I
D
(amperes)
T
A
= -55
°
C
0.9
1.5
1.0
1.0
0.8
0.5
0.6
0
0.6
25
°C
0.3
125°C
0
2
4
6
8
10
-50
0
50
100
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
10
T
j
(
°
C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
150
V
DS
= 10V
C (picofarads)
V
GS
(volts)
6
100
C
ISS
4
V
DS
= 40V
260 pF
50
2
C
RSS
0
0
10
20
30
C
OSS
0
40
0
95pF
0.4
0.8
1.2
1.6
2.0
V
DS
(volts)
Q
G
(nanocoulombs)
5
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
V
(th)
@ 1mA
工控电子
