TQP7M9105
®
1W High Linearity Amplifier
Product Overview
The TQP7M9105 is a high linearity, high gain 1 W driver
amplifier in industry standard, RoHS compliant, SOT-89
surface mount package. This InGaP / GaAs HBT delivers
high performance across 0.05 to 1.5 GHz while achieving
+47 dBm OIP3 and +30 dBm P1dB at 940 MHz while only
consuming 220 mA quiescent current. All devices are
100% RF and DC tested.
The TQP7M9105 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier has a dynamic active bias circuit that enable
stable operation over bias and temperature variations and
can provide a high linearity at back-off operation
The TQP7M9105 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium power,
and high efficiency are required. The device an excellent
candidate for transceiver line cards and high power
amplifiers in current and next generation multi-carrier
3G / 4G base stations.
3-pin SOT−89 Package
Key Features
•
•
•
•
•
•
•
•
•
50 – 1500 MHz
+30 dBm P1dB at 940 MHz
+47 dBm Output IP3 at 940 MHz
19.5 dB Gain at 940 MHz
+5 V Single Supply, 220 mA Current
Internal RF Overdrive Protection
Internal DC Overvoltage Protection
On Chip ESD Protection
SOT-89 Package
Functional Block Diagram
GND
4
Applications
•
•
•
•
•
Repeaters
BTS Transceivers
BTS High Power Amplifiers
CDMA / WCDMA / LTE
General Purpose Wireless
•
ISM Equipment
1
RF IN
2
GND
3
RF OUT
Top View
Ordering Information
Part No.
TQP7M9105
TQP7M9105-PCB900
Description
1 W High Linearity Amplifier
920 – 960 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
Datasheet, December 15, 2017 | Subject to change without notice
1 of 13
www.qorvo.com
TQP7M9105
®
1W High Linearity Amplifier
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power,
CW, 50 Ω, T=+25 °C
Device Voltage (V
CC
)
Rating
−65 to 150 °C
+30 dBm
+8 V
Recommended Operating Conditions
Parameter
Device Voltage (V
CC
)
T
CASE
Tj for >10
6
hours MTTF
Min
−40
Typ
+5.0
Max Units
+5.25
+105
+170
V
°C
°C
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: V
CC
= +5.0 V, Temp= +25 °C
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
WCDMA Output Power
Noise Figure
Quiescent Current, I
CQ
Thermal Resistance, θ
jc
Conditions
Min
50
17.5
Typ
940
19.4
14
15
+30
+47
+20.5
6.3
220
27.3
Max Units
1500
20.5
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
°C/W
Pout = +15 dBm/tone, ∆f = 1 MHz
−50 dBc ACLR
(1)
+28.7
+43.5
195
Module (junction to case)
245
Notes:
ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Datasheet, December 15, 2017 | Subject to change without notice
2 of 13
www.qorvo.com
TQP7M9105
®
1W High Linearity Amplifier
Device Characterization Data
30
25
20
15
-1
-0.75 -0.5 -0.25
-0.2
Gain & Max Stable Gain
Gain
Gmax
Input reflection coefficients
1
Output reflection coefficients
1
0.8
0.8
0.6
0.6
0.4
0.4
Gain (dB)
0.2
0.2
0
0
0
-0.4
0.25
0.5
0.75
1
-1
-0.75
-0.5
-0.25
-0.2
-0.4
0
0.25
0.5
0.75
1
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
-0.6
-0.6
-0.8
-0.8
-1
-1
Frequency (GHz)
Note:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color, [gain (S(21)]. For a tuned circuit for a particular
frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown as the blue trace [Gmax].
The impedance plots are shown from 0.01– 4 GHz.
S-Parameters
Test Conditions: V
CC
=+5 V, I
CQ
=220 mA, T=+25
°
C, unmatched 50 ohm system, calibrated to device leads
Freq (GHz)
0.05
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
S11 (dB)
−1.06
−1.08
−1.01
−0.75
−0.57
−0.51
−0.51
−0.54
−0.57
−0.62
−0.66
−0.60
−0.56
−0.75
−0.58
−0.55
−0.64
−0.69
−0.84
−0.93
−0.85
−0.80
S11 (ang)
−178.68
−179.98
179.18
176.01
171.34
166.55
163.55
161.26
157.96
154.88
150.04
144.26
139.27
135.92
132.79
132.30
129.89
126.19
121.41
115.44
110.18
106.76
S21 (dB)
17.88
16.04
15.20
14.04
12.73
11.29
10.11
8.87
7.85
7.10
6.35
5.75
4.95
3.91
3.16
2.52
2.01
1.69
1.48
1.06
0.51
−0.04
S21 (ang)
154.59
154.96
150.91
134.55
120.33
108.35
98.59
90.63
82.50
75.78
67.47
59.82
51.93
45.80
40.57
36.55
31.75
26.65
20.86
12.97
5.81
−0.51
S12 (dB)
−36.95
−37.20
−37.52
−36.48
−35.65
−35.14
−34.89
−34.56
−34.07
−33.47
−33.19
−32.84
−32.47
−32.62
−32.36
−32.25
−31.94
−31.44
−30.84
−30.84
−30.20
−30.40
S12 (ang)
1.89
3.77
7.85
11.27
11.92
9.35
11.74
11.00
10.99
10.29
11.13
4.95
3.98
1.55
2.07
2.62
0.51
1.40
−2.57
−4.71
−10.30
−11.85
S22 (dB)
−3.39
−3.00
−2.91
−2.73
−2.52
−2.51
−2.50
−2.52
−2.61
−2.57
−2.66
−2.64
−2.59
−2.57
−2.28
−2.33
−2.37
−2.40
−2.54
−2.68
−2.63
−2.51
S22 (ang)
−171.92
−176.29
−179.66
176.91
173.48
169.15
165.78
163.07
160.70
158.17
155.39
151.03
146.61
141.55
139.39
138.20
136.78
135.83
133.06
126.60
119.65
114.02
Datasheet, December 15, 2017 | Subject to change without notice
3 of 13
www.qorvo.com
TQP7M9105
®
1W High Linearity Amplifier
Evaluation Board 615 – 655 MHz Reference Design
J4
J3
J3 +5V
0.1 uF
J4 GND
C7
C6
C7
C6
1000 pF
L3
12 nH
J1
RF
Input
C1
L1
1
L3
U1
C1
L1
L2
C2
C5
C3
U1
TQP7M9103
L2
3
C2
J2
RF
Output
100 pF
C3
15 pF
2.2 nH
2,4
3.3 nH
C5 100 pF
10 pF
Notes:
1.
2.
3.
4.
5.
Components shown on the silkscreen but not on the schematic are not used.
0 Ω resistor can be replaced with copper trace in the target application layout.
All components are of 0603 size unless stated on the schematic.
The recommended component values are dependent upon the frequency of operation.
Critical component placement locations:
•
Distance between U1 Pin 1 Pad left edge to L1 (right edge): 100 mil
•
Distance between U1 Pin 1 Pad left edge to C3 (right edge): 200 mil
•
Distance between U1 Pin 3 Pad right edge to C5 (left edge): 210 mil
•
Distance between U1 Pin 3 Pad right edge to L2 (left edge): 120 mil
Bill of Material 615 – 655 MHz
Reference Des.
n/a
U1
C3
C5
C1, C2
C6
C7
L1
L2
L3
Value
n/a
n/a
15 pF
10 pF
100 pF
1000 pF
0.1 uF
2.2 nH
3.3 nH
12 nH
Description
Printed Circuit Board
1 W High Linearity Amplifier
CAP, 0603, ± 0.05 pF, 50V, NPO
CAP, 0603, ± 0.05 pF, 50V, NPO
CAP, 0603, 5%, 50V, NPO/COG
CAP, chip
CAP, 0603, 10%, X5R , 10V
IND, 0603, +/-0.3nH
IND, 0603, +/-0.3nH
IND, 0805, 5%, Wirewound
Manuf.
Qorvo
Qorvo
AVX
AVX
various
various
various
TOKO
TOKO
Coilcraft
Part Number
TQP7M9105
06032U150J
06032U100J
LL1608-FSL2N2S
LL1608-FSL3N3S
0805CS-120XJL
Datasheet, December 15, 2017 | Subject to change without notice
4 of 13
www.qorvo.com
TQP7M9105
®
1W High Linearity Amplifier
Typical Performance 615 – 655 MHz
Test conditions unless otherwise noted: V
C C
= +5 V, I
CQ
= 235 mA, Temp. = +25 °C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power
(1)
Conditions
617
21.6
10.5
17
+30.3
+44.7
+18
Typical Value
635
21.6
11
16.5
+30.5
+43.8
+17.5
652
21.6
11
17.5
+30.8
+42.7
+16.8
Units
MHz
dB
dB
dB
dBm
dBm
dBm
Pout = +16 dBm / tone, Δf =1 MHz
ACLR = −50 dBc
Notes:
1. 1C 20MHz LTE signal, PAR=9.5dB
Performance Plots 615 – 655 MHz
Test conditions unless otherwise noted: V
C C
= +5 V, I
CQ
= 235 mA, Temp. = +25 °C
23
Gain vs. Frequency
0
Return Loss vs. Frequency
55
OIP3 vs. Pout/tone
22
-5
51
|S11| & |S22| (dB)
Gain (dB)
21
OIP3 (dBm)
Input Return Loss
Output Return Loss
47
-10
20
43
-15
19
39
617 MHz
635 MHz
652 MHz
18
-20
35
600
610
620
630
640
650
660
670
600
610
620
630
640
650
660
670
12
13
14
15
16
17
Frequency (MHz)
Frequency (MHz)
Pout/Tone (dBm)
-35
ACPR vs Pout
1C 20MHz LTE signal, PAR = 9.5dB
-40
ACPR (dBc)
-45
-50
-55
617 MHz
635 MHz
652 MHz
-60
12
13
14
15
16
17
18
19
20
21
22
Pout (dBm)
Datasheet, December 15, 2017 | Subject to change without notice
5 of 13
www.qorvo.com
测评中心专版
