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TS10P01GD2G

Bridge Rectifier Diode,

器件类别：分立半导体    二极管   

厂商名称：Taiwan Semiconductor

厂商官网：http://www.taiwansemi.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Taiwan Semiconductor
包装说明
R-PSFM-T4
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
UL RECOGNIZED
最小击穿电压
50 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
JESD-30 代码
R-PSFM-T4
最大非重复峰值正向电流
200 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
最大重复峰值反向电压
50 V
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
文档预览
TS10P01G thru TS10P07G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Typical IR less than 0.1μA
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
TS-6P
MECHANICAL DATA
Case:
TS-6P
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class
1A
whisker test
Polarity:
Polarity as marked on the body
Mounting torque:
8.17 in-lbs maximum
Weight:
7.15 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@5A
@ 10 A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
TS10P TS10P TS10P TS10P TS10P TS10P TS10P
01G
50
35
50
02G
100
70
100
03G
200
140
200
04G
400
280
400
10
200
166
1.0
1.1
10
500
1.4
- 55 to +150
- 55 to +150
05G
600
420
600
06G
800
560
800
07G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
I
R
R
θJC
T
J
T
STG
uA
°C/W
°C
°C
Document Number: DS_D1411002
Version: I14
TS10P01G thru TS10P07G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
C2
X0
D2
G
PACKING CODE
SUFFIX
TS10P0xG
(Note 1)
TS-6P
TS-6P
TS-6P
15 / TUBE
Forming
15 / TUBE (Auto)
PACKAGE
PACKING
Note 1: "x" defines voltage from 50V (TS10P01G) to 1000V (TS10P07G)
EXAMPLE
PREFERRED
PART NO.
TS10P07G C2
TS10P07G C2G
PART NO.
TS10P07G
TS10P07G
PACKING CODE
C2
C2
G
Green compound
PACKING CODE
SUFFIX
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 MAXIMUM DERATING CURVE FOR
OUTPUT CURRENT
12
10
8
6
4
2
0
0
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
20
40
60
80
100
120
140
160
PEAK FORWARD SURGE
CURRENT(A)
150
200
8.3ms Single
Half Sine Wave
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
AVERAGE FORWARD
A
CURRENT (A)
100
50
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
CASE TEMPERATURE (
o
C)
FIG. 3 TYPICAL REVERSE CHARACTERISTICS
100
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS REVERSE
A
CURRENT (μA)
10
INSTANTANEOUS FORWARD
A
CURRENT (A)
100
120
140
T
J
=125°C
10
1
T
J
=25°C
0.1
1
0.01
0
20
40
60
80
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (V)
Document Number: DS_D1411002
Version: I14
TS10P01G thru TS10P07G
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE (pF)
A
100
f=1.0MHz
Vsig=50mVp-p
10
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
TS-6P
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Unit(mm)
Min
29.70
2.30
2.00
0.90
9.80
7.30
19.70
-
3.80
17.00
4.40
3.40
10.80
3.10
2.50
0.65
Max
30.30
2.70
2.40
1.10
10.20
7.70
20.30
4.80
4.20
18.00
4.80
3.80
11.20
3.40
2.90
0.75
Unit(inch)
Min
1.169
0.091
0.079
0.035
0.386
0.287
0.776
-
0.150
0.669
0.173
0.134
0.425
0.122
0.098
0.026
Max
1.193
0.106
0.094
0.043
0.402
0.303
0.799
0.189
0.165
0.709
0.189
0.150
0.441
0.134
0.114
0.030
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1411002
Version: I14
TS10P01G thru TS10P07G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1411002
Version: I14
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参数对比
与TS10P01GD2G相近的元器件有：TS10P02GC2、TS10P03GC2、TS10P03GD2G、TS10P05GC2、TS10P05GC2G、TS10P06GX0G、TS10P01GC2、TS10P01GC2G。描述及对比如下：
型号 TS10P01GD2G TS10P02GC2 TS10P03GC2 TS10P03GD2G TS10P05GC2 TS10P05GC2G TS10P06GX0G TS10P01GC2 TS10P01GC2G
描述 Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode,
包装说明 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
最小击穿电压 50 V 100 V 200 V 200 V 600 V 600 V 800 V 50 V 50 V
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
最大非重复峰值正向电流 200 A 200 A 200 A 200 A 200 A 200 A 200 A 200 A 200 A
元件数量 4 4 4 4 4 4 4 4 4
相数 1 1 1 1 1 1 1 1 1
端子数量 4 4 4 4 4 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A 10 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 50 V 100 V 200 V 200 V 600 V 600 V 800 V 50 V 50 V
表面贴装 NO NO NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
厂商名称 Taiwan Semiconductor - - - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
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