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TS272ID

Operational Amplifiers - Op Amps Dual Hi-Performance

器件类别：模拟混合信号IC    放大器电路   

厂商名称：ST(意法半导体)

厂商官网：http://www.st.com/

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器件参数
参数名称
属性值
Brand Name
STMicroelectronics
是否Rohs认证
不符合
厂商名称
ST(意法半导体)
零件包装代码
SOIC
包装说明
MICRO, PLASTIC, SO-8
针数
8
Reach Compliance Code
unknown
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.0003 µA
标称共模抑制比
80 dB
频率补偿
YES
最大输入失调电压
12000 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e4
长度
4.9 mm
低-偏置
YES
低-失调
NO
微功率
NO
湿度敏感等级
1
负供电电压上限
标称负供电电压 (Vsup)
功能数量
2
端子数量
8
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
功率
NO
电源
10 V
可编程功率
NO
认证状态
Not Qualified
座面最大高度
1.75 mm
标称压摆率
5.5 V/us
最大压摆率
3.4 mA
供电电压上限
18 V
标称供电电压 (Vsup)
10 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
标称均一增益带宽
3500 kHz
最小电压增益
6000
宽带
NO
宽度
3.9 mm
文档预览
TS272C,I,M
HIGH PERFORMANCE
CMOS DUAL OPERATIONAL AMPLIFIERS
s
OUTPUT VOLTAGE CAN SWING TO
GROUND
s
EXCELLENT PHASE MARGIN ON
CAPACITIVE LOADS
s
GAIN BANDWIDTH PRODUCT:
3.5MHz
s
STABLE AND LOW OFFSET VOLTAGE
s
THREE INPUT OFFSET VOLTAGE
SELECTIONS
DESCRIPTION
The TS272 devices are low cost, dual operational
amplifiers designed to operate with single or dual
supplies. These operational amplifiers use the ST
silicon gate CMOS process allowing an excellent
consumption-speed ratio. These series are ideally
suited for low consumption applications.
Three power consumptions are available allowing
to have always the best consumption-speed ratio:
D
SO8
(Plastic Micropackage)
N
DIP8
(Plastic Package)
P
TSSOP8
(Thin Shrink Small Outline Package)
u
I
CC
= 10µA/amp.: TS27L2 (very low power)
u
I
CC
= 150µA/amp.: TS27M2 (low power)
u
I
CC
= 1mA/amp.: TS272 (standard)
These CMOS amplifiers offer very high input im-
pedance and extremely low input currents. The
major advantage versus JFET devices is the very
low input currents drift with temperature (see fig-
ure 2).
ORDER CODE
Package
Part Number
Temperature Range
N
TS272C/AC/BC
0°C, +70°C
TS272I/AI/BI
-40°C, +125°C
TS272M/AM/BM
-55°C, +125°C
Example :
TS272ACN
•
•
•
D
•
•
•
P
•
•
•
1 - Output 1
2 - Inverting Input 1
3 - Non-inverting Input 1
4 - V
CC
-
5 - Non-inverting Input 2
6 - Inverting Input 2
7 - Output 2
8 - V
CC
+
1
2
3
4
-
+
-
+
8
7
6
5
PIN CONNECTIONS
(top view)
N =
Dual in Line Package (DIP)
D =
Small Outline Package (SO) - also available in Tape & Reel (DT)
P =
Thin Shrink Small Outline Package (TSSOP) - only available
in Tape & Reel (PT)
November 2001
1/9
TS272C,I,M
BLOCK DIAGRAM
V
CC
Current
source
xI
Input
differential
Second
stage
Output
stage
Output
V
CC
E
E
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC+
V
id
V
i
I
o
I
in
T
oper
T
stg
Parameter
Supply Voltage
1)
Differential Input Voltage
2)
Input Voltage
3)
Output Current for V
CC+
≥
15V
Input Current
Operating Free-Air Temperature Range
Storage Temperature Range
0 to +70
TS272C/AC/BC
TS272I/AI/BI
18
±18
-0.3 to 18
±30
±5
-40 to +125
-65 to +150
-55 to +125
TS272M/AM/BM
Unit
V
V
V
mA
mA
°C
°C
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
OPERATING CONDITIONS
Symbol
V
CC+
V
icm
Supply Voltage
Common Mode Input Voltage Range
Parameter
Value
3 to 16
0 to V
CC+
- 1.5
Unit
V
V
2/9
V
CC
T
24
T
25
T
26
T
6
T
8
T
27
T
5
T
10
T
15
SCHEMATIC DIAGRAM
(for 1/2 TS272)
R
2
T
28
T
1
Input
T
18
T
2
Input
R1
C1
T
11
T
12
T
17
T
7
T
23
T
3
Output
T
19
T
4
T
16
T
9
T
13
T
14
T
20
T
22
T
21
T
29
V
CC
TS272C,I,M
3/9
TS272C,I,M
ELECTRICAL CHARACTERISTICS
V
CC
+
= +10V, V
CC
-
= 0V, T
amb
= +25°C (unless otherwise specified)
TS272C/AC/BC
Symbol
Parameter
Min.
Input Offset Voltage
V
O
= 1.4V, V
ic
= 0V
V
io
T
min
≤
T
amb
≤
T
max
TS272C/I/M
TS272AC/AI/AM
TS272B/C/I/M
TS272C/I/M
TS272AC/AI/AM
TS272B/C/I/M
Typ.
1.1
0.9
0.25
Max.
10
5
2
12
6.5
3
TS272I/AI/BI
TS272M/AM/BM
Min.
Typ.
Max.
10
5
2
12
6.5
3
Unit
1.1
0.9
0.25
mV
DV
io
I
io
Input Offset Voltage Drift
Input Offset Current note
1)
V
ic
= 5V, V
O
= 5V
T
min
≤
T
amb
≤
T
max
Input Bias Current - see note 1
V
ic
= 5V, V
O
= 5V
T
min
≤
T
amb
≤
T
max
High Level Output Voltage
V
id
= 100mV, R
L
= 10kΩ
T
min
≤
T
amb
≤
T
max
Low Level Output Voltage
V
id
= -100mV
Large Signal Voltage Gain
V
iC
= 5V, R
L
= 10kΩ, V
o
= 1V to 6V
T
min
≤
T
amb
≤
T
max
Gain Bandwidth Product
A
v
= 40dB, R
L
= 10kΩ, C
L
= 100pF, f
in
= 100kHz
Common Mode Rejection Ratio
V
iC
= 1V to 7.4V, V
o
= 1.4V
Supply Voltage Rejection Ratio
V
CC+
= 5V to 10V, V
o
= 1.4V
Supply Current (per amplifier)
A
v
= 1, no load, V
o
= 5V
T
min
≤
T
amb
≤
T
max
Output Short Circuit Current
V
o
= 0V, V
id
= 100mV
Output Sink Current
V
o
= V
CC
, V
id
= -100mV
Slew Rate at Unity Gain
R
L
= 10kΩ, C
L
= 100pF, V
i
= 3 to 7V
Phase Margin at Unity Gain
A
v
= 40dB, R
L
= 10kΩ, C
L
= 100pF
Overshoot Factor
Equivalent Input Noise Voltage
f = 1kHz, R
s
= 100Ω
Channel Separation
65
60
10
7
8.2
8.1
2
1
100
1
150
8.4
8.2
8
50
15
10
6
2
1
200
1
300
8.4
µV/°C
pA
I
ib
pA
V
OH
V
OL
A
vd
V
50
15
mV
V/mV
GBP
CMR
SVR
3.5
80
70
1000
1500
1600
65
60
3.5
80
70
1000
1500
1700
MHz
dB
dB
I
CC
I
o
I
sink
SR
φm
K
OV
e
n
V
o1
/V
o2
1.
µA
60
45
5.5
40
30
30
120
60
45
5.5
40
30
30
120
mA
mA
V/µs
Degrees
%
nV
-----------
-
Hz
dB
Maximum values including unavoidable inaccuracies of the industrial test.
4/9
TS272C,I,M
TYPICAL CHARACTERISTICS
Figure 1 :
Supply Current (each amplifier) versus
Supply Voltage
2.0
Figure 3b :
High Level Output Voltage versus
High Level Output Current
20
SUPPLY CURRENT, I CC(mA)
OUTPUT VOLTAGE, V
OH
(V)
1.5
T
amb
= 25°C
A
V
= 1
V
O
= V
CC
/ 2
T
amb
= 25 ° C
16
12
8
4
0
-50
V
id
= 100mV
V
CC
= 16V
1.0
V
CC
= 10V
0.5
0
4
8
12
16
-40
-30
-20
-10
0
SUPPLY VOLTAGE, V (V)
CC
OUTPUT CURRENT, I
OH
(mA)
Figure 2 :
Input Bias Current versus Free Air
Temperature
100
INPUT BIAS CURRENT, IIB (pA)
Figure 4a :
Low Level Output Voltage versus Low
Level Output Current
1 .0
0 .8
0 .6
0 .4
0 .2
T amb = 2 5 °C
V ic = 0 .5 V
V id = -1 0 0 m V
1
2
O U T P U T C U R R E N T , I OL (m A )
3
V
C C
= 3 V
V
CC
= 10V
V
i
= 5V
O U T P U T V O L T A G E , VOL(V )
V
CC
= 5V
10
1
25
50
75
100
125
0
TEMPERATURE, T
amb
( °C)
Figure 3a :
High Level Output Voltage versus
High Level Output Current
5
Figure 4b :
Low Level Output Voltage versus Low
Level Output Current
O U T P U T V O L T A G E , V OL (V )
3
V
C C
= 10V
OUTPUT VOLTAGE, V
OH
(V)
4
3
2
1
0
-10
T
amb
= 25 ° C
V
id
= 100mV
V
CC
= 5V
2
V
C C
= 1 6 V
1
T amb = 2 5 °C
V i = 0 .5 V
V = -1 0 0 m V
id
0
4
8
12
16
20
V
CC
= 3V
-8
-6
-4
-2
0
OUTPUT CURRENT, I
OH
(mA)
O U T P U T C U R R E N T , I OL (m A )
5/9
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参数对比
与TS272ID相近的元器件有：TS272AIN、TS272IN、TS272CD、TS272CN、TS272ACN、TS272AIPT、TS272AID。描述及对比如下：
型号 TS272ID TS272AIN TS272IN TS272CD TS272CN TS272ACN TS272AIPT TS272AID
描述 Operational Amplifiers - Op Amps Dual Hi-Performance Operational Amplifiers - Op Amps Dual Hi-Performance Operational Amplifiers - Op Amps Dual Hi-Performance Operational Amplifiers - Op Amps Dual Hi-Performance Operational Amplifiers - Op Amps Dual Hi-Performance Operational Amplifiers - Op Amps Dual Hi-Performance Operational Amplifiers - Op Amps Dual Hi-Performance Operational Amplifiers - Op Amps Dual Hi-Performance
Brand Name STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
厂商名称 ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体)
零件包装代码 SOIC DIP DIP SOIC DIP DIP SOIC SOIC
包装说明 MICRO, PLASTIC, SO-8 DIP, DIP8,.3 DIP, DIP8,.3 MICRO, PLASTIC, SO-8 DIP, DIP8,.3 DIP, DIP8,.3 TSSOP, TSSOP8,.25 SOP, SOP8,.25
针数 8 8 8 8 8 8 8 8
Reach Compliance Code unknown not_compliant not_compliant compliant not_compliant not_compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.0003 µA 0.0003 µA 0.0003 µA 0.00015 µA 0.00015 µA 0.00015 µA 0.0003 µA 0.0003 µA
标称共模抑制比 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB
频率补偿 YES YES YES YES YES YES YES YES
最大输入失调电压 12000 µV 6500 µV 12000 µV 12000 µV 12000 µV 6500 µV 6500 µV 6500 µV
JESD-30 代码 R-PDSO-G8 R-PDIP-T8 R-PDIP-T8 R-PDSO-G8 R-PDIP-T8 R-PDIP-T8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e4 e3 e3 e4 e3 e3 e4 e4
低-偏置 YES YES YES YES YES YES YES YES
低-失调 NO NO NO NO NO NO NO NO
微功率 NO NO NO NO NO NO NO NO
功能数量 2 2 2 2 2 2 2 2
端子数量 8 8 8 8 8 8 8 8
最高工作温度 125 °C 125 °C 125 °C 70 °C 70 °C 70 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C - - - -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP DIP DIP SOP DIP DIP TSSOP SOP
封装等效代码 SOP8,.25 DIP8,.3 DIP8,.3 SOP8,.25 DIP8,.3 DIP8,.3 TSSOP8,.25 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE
峰值回流温度（摄氏度） 260 NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED NOT SPECIFIED 260 260
功率 NO NO NO NO NO NO NO NO
电源 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V
可编程功率 NO NO NO NO NO NO NO NO
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm 5.08 mm 5.08 mm 1.75 mm 5.08 mm 5.08 mm 1.2 mm 1.75 mm
标称压摆率 5.5 V/us 5.5 V/us 5.5 V/us 5.5 V/us 5.5 V/us 5.5 V/us 5.5 V/us 5.5 V/us
最大压摆率 3.4 mA 3.4 mA 3.4 mA 3.2 mA 3.2 mA 3.2 mA 3.4 mA 3.4 mA
供电电压上限 18 V 18 V 18 V 18 V 18 V 18 V 18 V 18 V
标称供电电压 (Vsup) 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V
表面贴装 YES NO NO YES NO NO YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE COMMERCIAL COMMERCIAL COMMERCIAL AUTOMOTIVE AUTOMOTIVE
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Nickel/Palladium/Gold (Ni/Pd/Au) Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式 GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING
端子节距 1.27 mm 2.54 mm 2.54 mm 1.27 mm 2.54 mm 2.54 mm 0.65 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED 10 30
标称均一增益带宽 3500 kHz 3500 kHz 3500 kHz 3500 kHz 3500 kHz 3500 kHz 3500 kHz 3500 kHz
最小电压增益 6000 6000 6000 7000 7000 7000 6000 6000
宽带 NO NO NO NO NO NO NO NO
宽度 3.9 mm 7.62 mm 7.62 mm 3.9 mm 7.62 mm 7.62 mm 3 mm 3.9 mm
是否Rohs认证 不符合 符合 符合 符合 符合 符合 - 符合
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器件捷径:
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