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TS27L2IN

Operational Amplifiers - Op Amps Dual Prec Low-Power

器件类别：模拟混合信号IC    放大器电路   

厂商名称：ST(意法半导体)

厂商官网：http://www.st.com/

器件标准：

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器件参数
参数名称
属性值
Brand Name
STMicroelectronics
是否Rohs认证
符合
厂商名称
ST(意法半导体)
零件包装代码
DIP
包装说明
DIP, DIP8,.3
针数
8
Reach Compliance Code
not_compliant
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.0003 µA
标称共模抑制比
80 dB
频率补偿
YES
最大输入失调电压
12000 µV
JESD-30 代码
R-PDIP-T8
JESD-609代码
e3
低-偏置
YES
低-失调
NO
微功率
YES
负供电电压上限
标称负供电电压 (Vsup)
功能数量
2
端子数量
8
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP8,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度（摄氏度）
NOT SPECIFIED
功率
NO
电源
5/10 V
可编程功率
NO
认证状态
Not Qualified
座面最大高度
5.08 mm
标称压摆率
0.04 V/us
最大压摆率
0.034 mA
供电电压上限
18 V
标称供电电压 (Vsup)
10 V
表面贴装
NO
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Matte Tin (Sn) - annealed
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
标称均一增益带宽
100 kHz
最小电压增益
45000
宽带
NO
宽度
7.62 mm
文档预览
TS27L2C,I,M
PRECISION VERY LOW POWER
CMOS DUAL OPERATIONAL AMPLIFIERS
s
VERY LOW POWER CONSUMPTION :
10µA/op
s
OUTPUT VOLTAGE CAN SWING TO
GROUND
s
EXCELLENT PHASE MARGIN ON
CAPACITIVE LOADS
s
STABLE AND LOW OFFSET VOLTAGE
s
THREE INPUT OFFSET VOLTAGE
SELECTIONS
DESCRIPTION
These devices are low cost, low power dual oper-
ational amplifiers designed to operate with single
or dual supplies. These operational amplifiers use
the ST silicon gate CMOS process allowing an ex-
cellent consumption-speed ratio. These series are
ideally suited for low consumption applications.
Three power consumptions are available allowing
to have always the best consumption-speed ratio:
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
P
TSSOP8
(Thin Shrink Small Outline Package)
u
I
CC
= 10µA/amp.: TS27L2 (very low power)
u
I
CC
= 150µA/amp.: TS27M2 (low power)
u
I
CC
= 1mA/amp.: TS272 (standard)
These CMOS amplifiers offer very high input im-
pedance and extremely low input currents. The
major advantage versus JFET devices is the very
low input currents drift with temperature (see fig-
ure 2).
ORDER CODE
Package
Part Number
Temperature Range
N
TS27L2C/AC/BC
0°C, +70°C
TS27L2I/AI/BI
-40°C, +125°C
TS27L2M/AM/BM
-55°C, +125°C
Example :
TS27L2ACN
•
•
•
D
•
•
•
P
•
•
•
PIN CONNECTIONS
(top view)
1
2
3
4
-
+
-
+
8
7
6
5
N =
Dual in Line Package (DIP)
D =
Small Outline Package (SO) - also available in Tape & Reel (DT)
P =
Thin Shrink Small Outline Package (TSSOP) - only available
in Tape & Reel (PT)
1 - Output 1
2 - Inverting Input 1
3 - Non-inverting Input 1
4 - V
CC
-
5 - Non-inverting Input 2
6 - Inverting Input 2
7 - Output 2
8 - V
CC
+
November 2001
1/9
TS27L2C,I,M
BLOCK DIAGRAM
V
CC
Current
source
xI
Input
differential
Second
stage
Output
stage
Output
V
CC
E
E
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC+
V
id
V
i
I
o
I
in
T
oper
T
stg
Parameter
Supply Voltage
1)
Differential Input Voltage
2)
Input Voltage
3)
Output Current for V
CC+
≥
15V
Input Current
Operating Free-Air Temperature Range
Storage Temperature Range
0 to +70
TS27L2C/AC/BC
TS27L2I/AI/BI
18
±18
-0.3 to 18
±30
±5
-40 to +125
-65 to +150
-55 to +125
TS27L2M/AM/BM
Unit
V
V
V
mA
mA
°C
°C
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
OPERATING CONDITIONS
Symbol
V
CC+
V
icm
Supply Voltage
Common Mode Input Voltage Range
Parameter
Value
3 to 16
0 to V
CC+
- 1.5
Unit
V
V
2/9
V
CC
T
24
T
25
T
26
T
6
T
8
T
27
T
5
T
10
T
15
SCHEMATIC DIAGRAM
(for 1/2 TS27L2)
R
2
T
28
T
1
Input
T
18
T
2
Input
R1
C1
T
11
T
12
T
17
T
7
T
23
T
3
Output
T
19
T
4
T
16
T
9
T
13
T
14
T
20
T
22
T
21
T
29
V
CC
TS27L2C,I,M
3/9
TS27L2C,I,M
ELECTRICAL CHARACTERISTICS
V
CC
+
= +10V, V
CC
-
= 0V, T
amb
= +25°C (unless otherwise specified)
TS27L2C/AC/BC
Symbol
Parameter
Min.
Input Offset Voltage
V
O
= 1.4V, V
ic
= 0V
V
io
T
min
≤
T
amb
≤
T
max
TS27L2C/I/M
TS27L2AC/AI/AM
TS27L2B/C/I/M
TS27L2C/I/M
TS27L2AC/AI/AM
TS27L2B/C/I/M
Typ.
1.1
0.9
0.25
Max.
10
5
2
12
6.5
3
TS27L2I/AI/BI
TS27L2M/AM/BM
Min.
Typ.
Max.
10
5
2
12
6.5
3.5
Unit
1.1
0.9
0.25
mV
DV
io
I
io
Input Offset Voltage Drift
Input Offset Current note
1)
V
ic
= 5V, V
O
= 5V
T
min
≤
T
amb
≤
T
max
Input Bias Current - see note 1
V
ic
= 5V, V
O
= 5V
T
min
≤
T
amb
≤
T
max
High Level Output Voltage
V
id
= 100mV, R
L
= 1MΩ
T
min
≤
T
amb
≤
T
max
Low Level Output Voltage
V
id
= -100mV
Large Signal Voltage Gain
V
iC
= 5V, R
L
= 1MΩ, V
o
= 1V to 6V
T
min
≤
T
amb
≤
T
max
Gain Bandwidth Product
A
v
= 40dB, R
L
= 1MΩ, C
L
= 100pF, f
in
= 100kHz
Common Mode Rejection Ratio
V
iC
= 1V to 7.4V, V
o
= 1.4V
Supply Voltage Rejection Ratio
V
CC+
= 5V to 10V, V
o
= 1.4V
Supply Current (per amplifier)
A
v
= 1, no load, V
o
= 5V
T
min
≤
T
amb
≤
T
max
Output Short Circuit Current
V
o
= 0V, V
id
= 100mV
Output Sink Current
V
o
= V
CC
, V
id
= -100mV
Slew Rate at Unity Gain
R
L
= 1MΩ, C
L
= 100pF, V
i
= 3 to 7V
Phase Margin at Unity Gain
A
v
= 40dB, R
L
= 1MΩ, C
L
= 100pF
Overshoot Factor
Equivalent Input Noise Voltage
f = 1kHz, R
s
= 100Ω
Channel Separation
65
60
60
45
8.8
8.7
2
1
100
1
150
9
8.8
8.6
50
100
60
40
2
1
200
1
300
9
µV/°C
pA
I
ib
pA
V
OH
V
OL
A
vd
V
50
100
mV
V/mV
GBP
CMR
SVR
0.1
80
80
10
15
17
65
60
0.1
80
80
10
15
18
MHz
dB
dB
I
CC
I
o
I
sink
SR
φm
K
OV
e
n
V
o1
/V
o2
1.
µA
60
45
0.04
45
30
68
120
60
45
0.04
45
30
68
120
mA
mA
V/µs
Degrees
%
nV
-----------
-
Hz
dB
Maximum values including unavoidable inaccuracies of the industrial test.
4/9
TS27L2C,I,M
TYPICAL CHARACTERISTICS
Figure 1 :
Supply Current (each amplifier) versus
Supply Voltage
20
Figure 3b :
High Level Output Voltage versus
High Level Output Current
20
OUTPUT VOLTAGE, V
OH
(V)
SUPPLY CURRENT, I
CC
(
µ
A)
15
T
amb
= 25
°
C
A
V
= 1
V
O
= V
CC
/ 2
T
amb
= 25° C
16
12
8
4
0
-50
V
id
= 100mV
V
CC
= 16V
10
V
CC
= 10V
5
0
4
8
12
16
SUPPLY VOLTAGE, V
CC
(V)
-40
-30
-20
-10
OUTPUT CURRENT, I
OH
(mA)
0
Figure 2 :
Input Bias Current versus Free Air
Temperature
100
Figure 4a :
Low Level Output Voltage versus Low
Level Output Current
1 .0
O U T P U T V O L T A G E , V
O L
(V )
INPUT BIAS CURRENT, IIB (pA)
V
CC
= 10V
V
i
= 5V
0 .8
0 .6
0 .4
0 .2
V
CC
= 3V
V
CC
= 5V
10
T amb = 2 5 °C
V ic = 0 .5 V
V id = -1 0 0 m V
1
2
3
1
25
50
100
TEMPERATURE, T
amb
(°C)
75
125
0
O U T P U T C U R R E N T , I
O L
(m A )
Figure 3a :
High Level Output Voltage versus
High Level Output Current
5
Figure 4b :
Low Level Output Voltage versus Low
Level Output Current
3
O U T P U T V O L T A G E , V OL (V )
OUTPUT VOLTAGE, V
OH
(V)
4
3
2
1
0
-10
T
amb
= 25° C
V
id
= 100mV
V
CC
= 5V
V
C C
= 10V
2
V
C C
= 1 6 V
1
T amb = 2 5 °C
V i = 0 .5 V
Vid = -1 0 0 m V
V
CC
= 3V
-8
-6
-4
-2
0
0
4
8
12
16
20
OUTPUT CURRENT, I
OH
(mA)
O U T P U T C U R R E N T , I OL (m A )
5/9
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参数对比
与TS27L2IN相近的元器件有：TS27L2ACD、TS27L2BIDT、TS27L2CPT、TS27L2AIN、TS27L2ID、TS27L2CD、TS27L2ACPT、TS27L2BCD。描述及对比如下：
型号 TS27L2IN TS27L2ACD TS27L2BIDT TS27L2CPT TS27L2AIN TS27L2ID TS27L2CD TS27L2ACPT TS27L2BCD
描述 Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Precision Amplifiers PRCISION VERY Lo Pwr CMOS DUAL OP AMPS
Brand Name STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合
零件包装代码 DIP SOIC SOIC SOIC DIP SOIC SOIC SOIC SOIC
包装说明 DIP, DIP8,.3 SOP, SOP8,.25 SOP, SOP8,.25 TSSOP, TSSOP8,.25 DIP, DIP8,.3 SOP, SOP8,.25 SOP, SOP8,.25 TSSOP, TSSOP8,.25 SOP, SOP8,.25
针数 8 8 8 8 8 8 8 8 8
Reach Compliance Code not_compliant compliant compliant compliant unknown compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.0003 µA 0.00015 µA 0.0003 µA 0.00015 µA 0.0003 µA 0.0003 µA 0.00015 µA 0.00015 µA 0.00015 µA
标称共模抑制比 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB
频率补偿 YES YES YES YES YES YES YES YES YES
最大输入失调电压 12000 µV 6500 µV 3500 µV 12000 µV 6500 µV 12000 µV 12000 µV 6500 µV 3000 µV
JESD-30 代码 R-PDIP-T8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDIP-T8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e3 e4 e4 e4 e3 e4 e4 e4 e4
低-偏置 YES YES YES YES YES YES YES YES YES
低-失调 NO NO NO NO NO NO NO NO NO
微功率 YES YES YES YES YES YES YES YES YES
功能数量 2 2 2 2 2 2 2 2 2
端子数量 8 8 8 8 8 8 8 8 8
最高工作温度 125 °C 70 °C 125 °C 70 °C 125 °C 125 °C 70 °C 70 °C 70 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP SOP SOP TSSOP DIP SOP SOP TSSOP SOP
封装等效代码 DIP8,.3 SOP8,.25 SOP8,.25 TSSOP8,.25 DIP8,.3 SOP8,.25 SOP8,.25 TSSOP8,.25 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE
峰值回流温度（摄氏度） NOT SPECIFIED 260 260 260 NOT SPECIFIED 260 260 260 260
功率 NO NO NO NO NO NO NO NO NO
电源 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V
可编程功率 NO NO NO NO NO NO NO NO NO
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 5.08 mm 1.75 mm 1.75 mm 1.2 mm 5.08 mm 1.75 mm 1.75 mm 1.2 mm 1.75 mm
标称压摆率 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us
最大压摆率 0.034 mA 0.034 mA 0.036 mA 0.034 mA 0.036 mA 0.034 mA 0.034 mA 0.034 mA 0.034 mA
供电电压上限 18 V 18 V 18 V 18 V 18 V 18 V 18 V 18 V 18 V
标称供电电压 (Vsup) 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V
表面贴装 NO YES YES YES NO YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE COMMERCIAL AUTOMOTIVE COMMERCIAL AUTOMOTIVE AUTOMOTIVE COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Matte Tin (Sn) - annealed Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Matte Tin (Sn) - annealed Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式 THROUGH-HOLE GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING
端子节距 2.54 mm 1.27 mm 1.27 mm 0.65 mm 2.54 mm 1.27 mm 1.27 mm 0.65 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 30 30 10 NOT SPECIFIED 30 30 10 30
标称均一增益带宽 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz
最小电压增益 45000 45000 40000 45000 40000 45000 45000 45000 45000
宽带 NO NO NO NO NO NO NO NO NO
宽度 7.62 mm 3.9 mm 3.9 mm 3 mm 7.62 mm 3.9 mm 3.9 mm 3 mm 3.9 mm
厂商名称 ST(意法半导体) ST(意法半导体) ST(意法半导体) - - ST(意法半导体) - ST(意法半导体) ST(意法半导体)
长度 - 4.9 mm 4.9 mm 4.4 mm - 4.9 mm 4.9 mm 4.4 mm 4.9 mm
湿度敏感等级 - 1 1 1 - 1 1 1 1
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