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TSD1760CP

Low Vce(sat) NPN Transistor

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

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TSD1760
Low Vce(sat) NPN Transistor
Pin assignment:
1. Base
2. Collector
3. Emitter
BV
CEO
= 30V
Ic = 3A
V
CE (SAT)
, = 0.25V(typ.) @Ic / Ib = 2A / 0.2A
Features
Low V
CE (SAT).
Excellent DC current gain characteristics
Ordering Information
Part No.
TSD1760CP
Packing
Tape & Reel
Package
TO-252
Structure
Epitaxial planar type.
Complementary to TSB1184
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 2mS
DC
Pulse
P
D
T
J
T
STG
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limit
40V
30V
5
3
7 (note 1)
1.0
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Characteristics
Ta = 25
o
C unless otherwise noted
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Conditions
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
/ I
B
= 2.0A / 0.2A
V
CE
= 2V, I
C
= 1A
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
V
CB
= 10V, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Cob
Min
40
30
5
--
--
--
120
--
Typ
--
--
--
--
--
0.25
--
90
45
Max
--
--
--
1
1
0.5
560
--
--
Unit
V
V
V
uA
uA
V
MHz
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Classification Of h
FE
Rank
Range
Q
120 - 270
R
180 - 390
S
270 - 560
TSD1760
1-1
2003/12 rev. A
Electrical Characteristics Curve
TSD1760
2-2
2003/12 rev. A
TO-252 Mechanical Drawing
J
A
E
F
DIM
A
B
C
D
E
F
G
H
I
J
TO-252 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
6.570
6.840
0.259
0.269
9.250
10.400
0.364
0.409
0.550
0.700
0.022
0.028
2.560
2.670
0.101
0.105
2.300
2.390
0.090
0.094
0.490
0.570
0.019
0.022
1.460
1.580
0.057
0.062
0.520
5.340
1.460
0.570
5.550
1.640
0.020
0.210
0.057
0.022
0.219
0.065
I
B
G
D
C
H
TSD1760
3-3
2003/12 rev. A
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参数对比
与TSD1760CP相近的元器件有:TSD1760CPS、TSD1760CPQ、TSD1760CPR。描述及对比如下:
型号 TSD1760CP TSD1760CPS TSD1760CPQ TSD1760CPR
描述 Low Vce(sat) NPN Transistor Low Vce(sat) NPN Transistor Low Vce(sat) NPN Transistor Low Vce(sat) NPN Transistor
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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