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TV1825FMR

Rectifier Diode, 1 Element, 200A, 2500V V(RRM),

器件类别：分立半导体    二极管   

厂商名称：Dynex

厂商官网：http://www.dynexsemi.com/

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
厂商名称
Dynex
零件包装代码
DO-9
针数
2
Reach Compliance Code
unknown
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
3.1 V
最大非重复峰值正向电流
3500 A
元件数量
1
最高工作温度
150 °C
最大输出电流
200 A
最大重复峰值反向电压
2500 V
最大反向恢复时间
3.2 µs
表面贴装
NO
Base Number Matches
1
文档预览
TV18..F
TV18..F
Fast Recovery Diode
Replaces March 1998 version, DS4211-2.2
DS4211-3.0 January 2000
APPLICATIONS
s
Induction Heating
s
A.C. Motor Drives
s
Snubber Diode
s
Welding
s
High Frequency Rectification
s
UPS
KEY PARAMETERS
V
RRM
2500V
I
F(AV)
200A
I
FSM
3500A
Q
r
240
µ
C
t
rr
2.0
µ
s
FEATURES
s
Thermal Fatigue Free Pressure Contact
s
High Surge Capability
s
Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
2500
2400
2200
2000
Conditions
TV18 25F M or K
TV18 24F M or K
TV18 22F M or K
TV18 20F M or K
V
RSM
= V
RRM
+ 100V
For 3/4" 16 UNF thread, add suffix K, e.g. TV18 25FK.
For M16 thread, add suffix M, e.g. TV18 25FM.
For stud anode add 'R' to type number, e.g. TV18 25FMR.
Outline type codes: DO9.
See Package Details for further information.
CURRENT RATINGS
Symbol
I
F(AV)
I
F(RMS)
Parameter
Mean forward current
RMS value
Conditions
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
Max.
200
320
Units
A
A
1/8
TV18..F
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
3.5
Units
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 150 C
I t for fusing
2
o
2
o
61 x 10
3
2.8
39.2x 10
3
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
-
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Mounting torque
Mounting torque 35.0Nm
with mounting compound
On-state (conducting)
Conditions
dc
Min.
-
-
-
-55
30.0
Max.
0.16
0.06
150
175
35.0
Units
o
C/W
o
C/W
o
C
C
o
Nm
CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage
At T
vj
= 150
o
C
At T
vj
= 150
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
I
F
= 1000A, di
RR
/dt = 100A/µs
T
case
= 150
o
C, V
R
= 100V
Parameter
Conditions
At 1000A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
Typ.
-
-
-
-
-
1.3
-
-
-
Max.
3.1
50
3.2
240
160
-
1.64
1.54
120
Units
V
mA
µs
µC
A
-
V
mΩ
V
2/8
TV18..F
DEFINITION OF K FACTOR AND Q
RA1
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
dI
R
/dt
0.5x I
RR
I
RR
t
1
t
2
k = t
1
/t
2
τ
CURVES
2000
Measured under pulse
conditions
1750
Instantaneous forward current I
F
- (A)
1500
1250
T
j
= 150˚C
1000
T
j
= 25˚C
750
500
1.0
2.0
3.0
4.0
5.0
Instantaneous forward voltage V
F
- (V)
Fig.1 Maximum (limit) forward characteristics
3/8
TV18..F
500
Measured under
pulse conditions
400
Instantaneous forward current I
F
- (A)
T
j
= 150˚C
300
T
j
= 25˚C
200
100
0
1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage V
F
- (V)
Fig.2 Maximum (limit) forward characteristics
250
Current
waveform
V
FR
200
Transient forward votage V
FP
- (V)
Voltage
waveform
δy
δx
T
j
= 100˚C limit
di =
δy
dt
δx
150
100
T
j
= 25˚C limit
50
0
0
500
1000
1500
2000
Rate of rise of forward current dI
F
/dt - (A/µs)
Fig.3 Transient forward voltage vs rate of rise of forward current
4/8
TV18..F
10000
I
F
Q
S
=
∫
50µs
0
Conditions:
T
j
= 150˚C,
QS
V
R
= 100V
Reverse recovered charge Q
S
- (µC)
1000
t
p
= 1ms
dI
R
/dt
I
RR
I
F
= 1000A
I
F
= 750A
I
F
= 500A
I
F
= 200A
I
F
= 100A
100
10
1
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
Fig.4 Recovered charge
1000
10000
Conditions:
T
j
= 150˚C,
V
R
= 100V
I
F
= 1000A
I
F
= 750A
I
F
= 500A
I
F
= 200A
100
I
F
= 100A
Reverse recovery current I
RR
- (A)
10
1
1
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
1000
Fig.5 Typical reverse recovery current vs rate of rise of reverse current
5/8
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参数对比
与TV1825FMR相近的元器件有：TV1822FMR、TV1824FKR、TV1824FMR、TV1820FMR、TV1825FKR、TV1820FKR。描述及对比如下：
型号 TV1825FMR TV1822FMR TV1824FKR TV1824FMR TV1820FMR TV1825FKR TV1820FKR
描述 Rectifier Diode, 1 Element, 200A, 2500V V(RRM), Rectifier Diode, 1 Phase, 1 Element, 200A, 2200V V(RRM), Silicon, DO-9, DO-9, 2 PIN Rectifier Diode, 1 Element, 200A, 2400V V(RRM), Rectifier Diode, 1 Phase, 1 Element, 200A, 2400V V(RRM), Silicon, DO-9, DO-9, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 200A, 2000V V(RRM), Silicon, DO-9, DO-9, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 200A, 2500V V(RRM), Silicon, DO-9, DO-9, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 200A, 2000V V(RRM), Silicon, DO-9, DO-9, 2 PIN
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
零件包装代码 DO-9 DO-9 DO-9 DO-9 DO-9 DO-9 DO-9
针数 2 2 2 2 2 2 2
Reach Compliance Code unknown unknown unknown unknown unknown unknow unknown
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大非重复峰值正向电流 3500 A 3500 A 3500 A 3500 A 3500 A 3500 A 3500 A
元件数量 1 1 1 1 1 1 1
最大输出电流 200 A 200 A 200 A 200 A 200 A 200 A 200 A
最大重复峰值反向电压 2500 V 2200 V 2400 V 2400 V 2000 V 2500 V 2000 V
最大反向恢复时间 3.2 µs 3.2 µs 3.2 µs 3.2 µs 3.2 µs 3.2 µs 3.2 µs
表面贴装 NO NO NO NO NO NO NO
厂商名称 Dynex Dynex Dynex Dynex Dynex Dynex -
是否Rohs认证 - 符合 - 符合 符合 符合 符合
包装说明 - O-MUPM-H2 - O-MUPM-H2 O-MUPM-H2 O-MUPM-H2 O-MUPM-H2
ECCN代码 - EAR99 - EAR99 EAR99 EAR99 EAR99
其他特性 - SNUBBER DIODE, HIGH SURGE CAPABILITY - SNUBBER DIODE, HIGH SURGE CAPABILITY SNUBBER DIODE, HIGH SURGE CAPABILITY SNUBBER DIODE, HIGH SURGE CAPABILITY SNUBBER DIODE, HIGH SURGE CAPABILITY
应用 - FAST RECOVERY - FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
外壳连接 - ANODE - ANODE ANODE ANODE ANODE
二极管元件材料 - SILICON - SILICON SILICON SILICON SILICON
JEDEC-95代码 - DO-9 - DO-9 DO-9 DO-9 DO-9
JESD-30 代码 - O-MUPM-H2 - O-MUPM-H2 O-MUPM-H2 O-MUPM-H2 O-MUPM-H2
相数 - 1 - 1 1 1 1
端子数量 - 2 - 2 2 2 2
封装主体材料 - METAL - METAL METAL METAL METAL
封装形状 - ROUND - ROUND ROUND ROUND ROUND
封装形式 - POST/STUD MOUNT - POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
峰值回流温度（摄氏度） - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 - Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
端子形式 - HIGH CURRENT CABLE - HIGH CURRENT CABLE HIGH CURRENT CABLE HIGH CURRENT CABLE HIGH CURRENT CABLE
端子位置 - UPPER - UPPER UPPER UPPER UPPER
处于峰值回流温度下的最长时间 - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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