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U74LVC2G86L-S08-T

This device has power-down protective circuit, preventing device destruction when it is powered down.

器件类别:逻辑    逻辑   

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
UNISONIC TECHNOLOGIES CO.,LTD
包装说明
SOP,
Reach Compliance Code
compliant
系列
LVC/LCX/Z
JESD-30 代码
R-PDSO-G8
长度
4.9 mm
逻辑集成电路类型
XOR GATE
功能数量
2
输入次数
2
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
传播延迟(tpd)
9.9 ns
座面最大高度
1.75 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.65 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
3.9 mm
文档预览
UTC UT138FF/FG
TRIACS
DESCRIPTION
Glass passivated triacs in a full pack plastic envelope, intended
for use in applications requiring high bidirectional transient and
blocking voltage capability and high thermal cycling performance.
Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
TRIAC
SYMBOL
MT2
1
TO-220F
G
MT1
1:MT1
2:MT2
3:GATE
ABSOLUTE MAXIMUM RATINGS
( Tj=25°C)
PARAMETER
Repetitive Peak Off-State Voltages
UT138FF/FG-5
UT138FF/FG-6
UT138FF/FG-8
(Full sine wave, T
hs
≤56°C)
SYMBOL
V
DRM
RATING
500*
600*
800
12
UNIT
V
RMS On-state Current
I
T(RMS)
A
Non-repetitive Peak. On-State Current
(Full sine wave, Tj=125°C prior to surge, with reapplied
VDRM(max)
I
TSM
A
90
t=20ms
t=16.7ms
100
I
2
t For Fusing
(t=10ms)
I
2
t
40
A
2
s
Repetitive Rate of Rise of On-state Current after Triggering
(I
TM
=20A,I
G
=0.2A, dI
G
/dt=0.2A/µs)
50
T2+ G+
A/µs
dI
T
/dt
50
T2+ G-
50
T2- G-
10
T2- G+
Peak Gate Voltage
V
GM
5
V
Peak Gate Current
I
GM
2
A
Peak Gate Power
P
GM
5
W
Average Gate Power (over any 20ms period)
P
G(AV)
0.5
W
Operating Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
-40~150
°C
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch
to the on-state. The rate of rise of current should not exceed 15A/µs.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R401-020,B
UTC UT138FF/FG
PARAMETER
R.M.S. isolation voltage form all three terminals to
external heatsink (f=50-60Hz, sinusoidal waveform
R.H.≦65%,clean and dustfree)
Capacitance from MT2 to external heatsink
(f=1MHz)
TRIAC
SYMBOL
Visol
Cisol
12
ISOLATION LINITING VALUE & CHARACTERISTIC
(T
hs
=25°C,unless otherwise specified)
MIN
TYP
MAX
1500
UNIT
V
pF
THERMAL RESISTANCES
PARAMETER
Thermal Resistance, Junction to heatsink
(full or half cycle)
with heatsink compound
without heatsink compound
Thermal Resistance, Junction to Ambient
In free air
SYMBOL
Rthj-hs
Rthj-a
MIN
TYP
MAX
4.0
5.5
UNIT
K/W
K/W
55
STATIC CHARACTERISTICS
(Tj=25°C,unless otherwise specified)
PARAMETER
Gate trigger current
SYMBOL
I
GT
CONDITIONS
V
D
=12V, I
T
=0.1A
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN
TYP
5
8
10
22
7
20
8
10
6
1.4
0.7
0.4
0.1
MAX
UT138FF UT138FG
25
25
25
70
40
60
40
60
30
1.65
1.5
0.5
50
50
50
100
60
90
60
90
60
UNIT
mA
Latching current
I
L
V
D
=12V, I
GT
=0.1A
T2+ G+
T2+ G-
T2- G-
T2- G+
V
D
= 12 V, I
GT
= 0.1 A
I
T
=15A
V
D
=12V, I
T
=0.1A
V
D
=400V, I
T
=0.1A, Tj=125°C
V
D
=V
DRM(max)
, Tj=125°C
mA
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
I
H
V
T
V
GT
I
D
0.25
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
(Tj=25°C,unless otherwise specified)
PARAMETER
Critical rate of change of
Off-state voltage
Critical rate of change of
Commutating voltage
Gate controlled turn-on
time
SYMBOL
dV
D
/dt
CONDITIONS
V
DM
= 67% V
DRM(max)
, T
j
=125°C;
exponential waveform, gate open
circuit
V
DM
=400V;T
j
=95°C,I
T(RMS)
=12A;
dI
com
/dt =5.4A/ms, gate open
circuit
I
TM
=16 A, V
D
= V
DRM(max)
, I
G
=0.1A;
dI
G
/dt=5A/µs
MIN
TYP
UT138FF UT138FG
100
200
250
MAX UNIT
V/µs
dV
com
/dt
20
V/µs
t
gt
2
µs
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R401-020,B
UTC UT138FF/FG
TYPICAL CHARACTERISTICS
Figure 1.Maximum on -state Dissipation.Ptot vs rms
On-state Current,I
T(RMS)
,Whereα=conduction Angle.
20
Ptot/W
α
15
α
T
hs
(max)/C
α=180
α=120
α=90
α=60
α=30
45
15
TRIAC
Figure 4.Maximum Permissible RMS Current I
T(RMS)
vs heatsinkTemperature T
hs
IT(RMS)/A
56℃
65
10
85
5
10
5
105
0
0
5
10
IT(RMS)/A
125
15
0
-50
0
50
T
hs
/℃
100
150
1000
Figure 2. Maximum Permissible Non-repetitive
Peak On-state Current I
TSM
,vs Pulse Width
t
p
,for Sinusoidal Currents,t
p
≦20ms
ITSM/A
Figure 5.Maximum Permissible Repetitive rms on-state
Current IT(RMS),vs Surge Duration,for Sinusoidal
Currents,f=50Hz;T
hs
≦56℃
IT(RMS)/A
25
20
15
100
dI
T
/dt limit
T2-G+ quadrant
10
10us
100us
I
T
T
Tj initial=25℃max
I
TSM
time
10
5
0
0.01
100
80
1ms
10ms
100ms
T/s
Figure 3 .Maximum Permissible Non-Repetitive
peak on-state Current I
TSM
,vs Number of Cycles,
for Sinusoidal Currents,f=50Hz
ITSM/A
I
T
I
TSM
time
T
Tj initial=25℃max
1
10
0.1
Surge Duration /S
Figure 6.Normalised Gate Trigger Voltage V
GT
(Tj)/
V
GT
(25℃),vs Junction Temperature Tj
V
GT
(Tj)
1.6 V
GT
(25℃)
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
Tj/℃
100
150
60
40
20
0
1
100
10
Number of Cycles at 50Hz
1000
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R401-020,B
UTC UT138FF/FG
Figure 7.Normalised Gate Trigger Current
I
GT
(Tj)/I
GT
(25℃),vs Junction Temperature Tj
I
GT
(Tj)
I
GT
(25℃)
T2+G+
T2+G-
T2-G-
T1-G+
Figure 10.Typical and Maximum
On-state Characteristic
IT/A
40
30
Tj=125℃
Tj=25℃
Vo=1.175V
Rs=0.0316 Ohms
20
typ
TRIAC
3
2.5
2
1.5
1
max
10
0.5
0
-50
0
50
Tj/℃
Figure 8.Normalised Latching Current
I
L
(Tj)/I
L
(25℃),vs Junction Temperature Tj
100
150
0
0
0.5
1
1.5
VT/V
2
2.5
3
3
2.5
2
1.5
1
0.5
0
I
L
(Tj)
I
L
(25℃)
10
Figure 11.Transient Thermal Impedance
Zth j-hs,vs Pulse Width tp
Zth j-hs (K/W)
with heatsink compound
without heatsink compound
1
unidirectional
bidirectional
0.1
P
D
0.01
t
0
50
Tj/℃
Figure 9.Normalised Holding Current
I
H
(Tj)/I
H
(25℃),vs Junction Temperature Tj
100
150
0.001
10us
0.1ms
1ms
10ms
tp/s
0.1s
1s
10s
tp
-50
3
2.5
2
1.5
1
0.5
0
I
H
(Tj)
I
H
(25℃)
Figure 12.Typical,critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature Tj
dV/dt(V/us)
1000
off-state dV/dt limit
100
UT138FG
UT138FF
10
dlcom/dt=15A/
ms
12
9.1
7
5.4
4.2
-50
0
50
Tj/℃
100
150
1
0
50
Tj/℃
100
150
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R401-020,B
UTC UT138FF/FG
TRIAC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R401-020,B
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参数对比
与U74LVC2G86L-S08-T相近的元器件有:U74LVC2G86、U74LVC2G86G-S08-T、U74LVC2G86L-S08-R。描述及对比如下:
型号 U74LVC2G86L-S08-T U74LVC2G86 U74LVC2G86G-S08-T U74LVC2G86L-S08-R
描述 This device has power-down protective circuit, preventing device destruction when it is powered down. This device has power-down protective circuit, preventing device destruction when it is powered down. This device has power-down protective circuit, preventing device destruction when it is powered down. This device has power-down protective circuit, preventing device destruction when it is powered down.
是否Rohs认证 符合 - 符合 符合
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
包装说明 SOP, - SOP, SOP,
Reach Compliance Code compliant - compli compliant
系列 LVC/LCX/Z - LVC/LCX/Z LVC/LCX/Z
JESD-30 代码 R-PDSO-G8 - R-PDSO-G8 R-PDSO-G8
长度 4.9 mm - 4.9 mm 4.9 mm
逻辑集成电路类型 XOR GATE - XOR GATE XOR GATE
功能数量 2 - 2 2
输入次数 2 - 2 2
端子数量 8 - 8 8
最高工作温度 85 °C - 85 °C 85 °C
最低工作温度 -40 °C - -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP - SOP SOP
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
传播延迟(tpd) 9.9 ns - 9.9 ns 9.9 ns
座面最大高度 1.75 mm - 1.75 mm 1.75 mm
最大供电电压 (Vsup) 5.5 V - 5.5 V 5.5 V
最小供电电压 (Vsup) 1.65 V - 1.65 V 1.65 V
标称供电电压 (Vsup) 1.8 V - 1.8 V 1.8 V
表面贴装 YES - YES YES
技术 CMOS - CMOS CMOS
温度等级 INDUSTRIAL - INDUSTRIAL INDUSTRIAL
端子形式 GULL WING - GULL WING GULL WING
端子节距 1.27 mm - 1.27 mm 1.27 mm
端子位置 DUAL - DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
宽度 3.9 mm - 3.9 mm 3.9 mm
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