UF1001–UF1007
Vishay Lite–On Power Semiconductor
1.0A Ultra–Fast Rectifier
Features
D
Diffused junction
D
Ultra–fast switching for high efficiency
D
High current capability and low forward voltage
drop
D
Surge overload rating to 30A peak
D
Low reverse leakage current
D
Plastic material – UL Recognition flammability
classification 94V–0
94 9369
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
g
=Working peak reverse voltage
=DC Bl ki voltage
DC Blocking lt
Test Conditions
Type
UF1001
UF1002
UF1003
UF1004
UF1005
UF1006
UF1007
Symbol
V
RRM
=V
RWM
=V
R
V
Value
50
100
200
400
600
800
1000
30
1
–65...+150
Unit
V
V
V
V
V
V
V
A
A
°
C
Peak forward surge current
Average forward current
T
A
=55
°
C
Junction and storage temperature range
I
FSM
I
FAV
T
j
=T
stg
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Test Conditions
I
F
=1A
Type
UF1001–1003
UF1004
UF1005–1007
Symbol
V
F
V
F
V
F
I
R
I
R
t
rr
t
rr
C
D
C
D
R
thJA
Min
Typ
Max
1
1.3
1.7
5
100
50
75
Unit
V
V
V
m
A
m
A
ns
ns
pF
pF
K/W
Reverse current
Reverse recovery time
y
Diode capacitance
Thermal resistance
junction to ambient
T
A
=25
°
C
T
A
=100
°
C
I
F
=1A, I
R
=0.5A,
I
rr
=0.25A
V
R
=4V, f=1MHz
UF1001–1004
UF1005–1007
UF1001–1004
UF1005–1007
20
10
95
Rev. A2, 24-Jun-98
1 (4)
UF1001–UF1007
Vishay Lite–On Power Semiconductor
Characteristics
(T
j
= 25
_
C unless otherwise specified)
I
FSM
– Peak Forward Surge Current ( A )
I
FAV
– Average Forward Current ( A )
1.00
30
8.3 ms Single Half–Sine–Wave
JEDEC method
0.75
20
0.50
10
0.25
Single phase half–wave
Resistive or Inductive load
0
0
15458
0
1
10
Number of Cycles at 60 Hz
100
25
50
75
100 125
150 175
15460
T
amb
– Ambient Temperature (
°C
)
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
20
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
100
C
D
– Diode Capacitance ( pF )
10
I
F
– Forward Current ( A )
T
j
= 25°C
I
F
Pulse Width = 300
µs
T
j
= 25°C
f = 1 MHz
UF1001–UF1004
UF1004
1.0
UF1001–UF1003
10
UF1005–UF1007
0.1
0.01
0
15459
UF1005–UF1007
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
15461
1
10
V
R
– Reverse Voltage ( V )
100
V
F
– Forward Voltage ( V )
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
UF1001–UF1007
Vishay Lite–On Power Semiconductor
Dimensions in mm
14443
Case: molded plastic
Polarity: cathode band
Approx. weight: 0.35 grams
Mounting position: any
Marking: type number
Rev. A2, 24-Jun-98
3 (4)
UF1001–UF1007
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
