UNISONIC TECHNOLOGIES CO., LTD
UF3N30Z
3A, 300V N-CHANNEL
POWER MOSFET
1
Power MOSFET
DESCRIPTION
TO-251
The UTC
UF3N30Z
is an N-channel enhancement mode Power
MOSFET using UTC’ s advanced technology to provide customers
with a minimum on-state resistance, low gate charge and superior
switching performance.
FEATURES
1
* R
DS(ON)
<2Ω @ V
GS
=10V, I
D
=3A
* High switching speed
* Typically 4nC low gate charge
* 100% avalanche tested
TO-252
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
UF3N30ZL-TM3-R
UF3N30ZG-TM3-R
UF3N30ZL-TN3-T
UF3N30ZG-TN3-T
UF3N30ZL-TN3-R
UF3N30ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
UF3N30ZL-TM3-R
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) T: Tube, R: Tape Reel
(2) TM3: TO-251, TN3: TO-252
(3) L: Lead Free, G: Halogen Free
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Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-826. B
UF3N30Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATINGS
UNIT
V
DSS
300
V
V
GSS
±20
V
Continuous
I
D
3
A
Continuous Drain Current
Pulsed
I
DM
12
A
Avalanche Energy
E
AS
52
mJ
Power Dissipation
P
D
50
W
Junction Temperature
T
J
+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
ELECTRICAL CHARACTERISTICS
MIN TYP MAX UNIT
300
1
10
-10
2
4
2
200
90
30
4
0.64
1.6
10
50
30
40
3
12
1.3
V
µA
µA
µA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=300V
Forward
V
GS
=+20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DD
=50V, I
D
=1.3A, I
G
=100µA,
Gate to Source Charge
Q
GS
V
GS
=10V
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω,
V
GS
=0~10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=0.85A
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QW-R502-826. B
UF3N30Z
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
300
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, I
D
(µA)
250
200
150
100
50
0
Drain Current, I
D
(µA)
200
150
100
50
0
0
0
70
210
280 350
140
Drain-Source Breakdown Voltage, BV
DSS
(V)
0.7
2.1 2.8
1.4
3.5 4.2
Gate Threshold Voltage, V
TH
(V)
Drain-Source On-State Resistance
Characteristics
0.5
V
GS
=10V, I
D
=0.425A
0.4
Drain Current vs. Source to Drain Voltage
1.0
0.8
0.6
Drain Current, I
D
(A)
0.3
Drain Current, I
D
(A)
0
0.2
0.4
0.6
0.8
Drain to Source Voltage, V
DS
(V)
1.0
0.2
0.1
0
0.4
0.2
0
0
0.2
0.4 0.6
0.8 1.0 1.2
Source to Drain Voltage, V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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