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UF4002G

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:Yenyo Technology Co., Ltd.

厂商官网:http://www.yenyo.com.tw/

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YENYO
Glass Passivated Ultra Fast Recovery Rectifier
Voltage Range 50 to 1000 V
Current 1.0 Ampere
DO-41
.034(.86)
.028(.71)
1.0(25.4)
MIN.
DIA.
UF4001G THRU UF4007G
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Mechanical Data
Case: Molded plastic DO-41
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 0.34 gram
.205(5.2)
.160(4.1)
.107(2.7)
1.0(25.4)
MIN.
.080(2.0)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMTER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
L
=55
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 1.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
UF
SYMBOL 4001G
V
RRM
V
RMS
V
DC
IF
(AV)
50
35
50
UF
4002G
100
70
100
UF
4003G
200
140
200
UF
4004G
400
280
400
1.0
UF
4005G
600
420
600
UF
4006G
800
560
800
UF
UNIT
4007G
1000
700
1000
V
V
V
A
I
FSM
30
A
V
F
I
R
Trr
C
J
R
JA
T
J
, T
STG
1.0
1.3
5.0
100
50
17
60
-55 to +150
1.7
V
uA
uA
nS
pF
o
75
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to lead.
1/2
R1, MAY-12
RATINGS AND CHARACTERISTIC CURVES UF4001G THRU UF4007G
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
30
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
0.8
25
20
0.6
15
0.4
10
0.2
60 Hz Resistive or
Inductive load
0
0
50
100
o
5
0
150
1
10
100
LEAD TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
UF4001G-UF4003G
1.0
UF4004G
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
100
T
J
=125 C
o
10
0.1
UF4005G-UF4007G
1
T
J
=25 C
o
0.01
0.4
0.6
0.8
1.0
T
J
=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
1.2
1.4
1.6
1.8
o
0.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
o
10
1
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
YENYO TECHNOLOGY CO., LTD.
2/2
R1, MAY-12
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参数对比
与UF4002G相近的元器件有:UF4003G、UF4004G、UF4005G、UF4006G、UF4007G。描述及对比如下:
型号 UF4002G UF4003G UF4004G UF4005G UF4006G UF4007G
描述 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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