UNISONIC TECHNOLOGIES CO., LTD
UP1868
LOW SATURATION VOLTAGE
PNP POWER TRANSISTOR
FEATURES
* Low saturation voltage with equivalent on-resistance be R
CE(SAT)
about 40mΩ at 5A)
* High gain that can be replace parts for power MOSFET.
PNP SILICON TRANSISTOR
*Pb-free plating product number: UP1868L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
UP1868-AA3-F-R
UP1868L-AA3-F-R
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
PNP SILICON TRANSISTOR
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Peak Pulse Current
I
C(PEAK)
-20
A
Continuous Collector Current
I
C
-6
A
Power Dissipation
P
C
3
W
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(at Ta = 25℃ unless otherwise specified)
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
=-100µA
Breakdown Voltage (Note)
BV
CEO
I
C
=-10mA
BV
EBO
I
E
=-100µA
I
C
=-500mA,I
B
=-5mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=-2A, I
B
=-50mA
(Note)
I
C
=-6A, I
B
=-250mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=-6A, I
B
=-250mA
Base-Emitter Turn-On Voltage (Note)
V
BE(ON)
V
CE
=-1V, I
C
=-6A
V
CB
=-12V
Collector Cut-Off Current
I
CBO
V
CB
=-12V,Ta=100℃
Emitter Cut-Off Current
I
EBO
V
EB
=-6V
h
FE1
V
CE
=-1V , I
C
=-10mA
h
FE2
V
CE
=-1V , I
C
=-500mA
DC Current Gain (Note)
h
FE3
V
CE
=-1V , I
C
=-5mA
h
FE4
V
CE
=-1V , I
C
=-10A
Current Gain Bandwidth Product
f
T
V
CE
=-10V, I
C
=-100mA, f=50MHz
Output Capacitance
C
ob
V
CB
=-20V, f=1MHz
t
ON
I
C
=-4A, I
B1
=-400mA
Switching Times
I
B2
=400mA, V
CC
=-10V
t
OFF
Note: Pulse test: Pulse Width=300μs, Duty Cycle≦2%
PARAMETER
MIN
-15
-12
-6
MAX UNIT
V
V
V
-55
-100 mV
-132 -160 mV
-440 mV
-1050 -1200 mV
-950 -1050 mV
-10
nA
-1.0
µA
-10
nA
1000
TYP
300
300
200
150
80
161
120
116
MHz
pF
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
Saturation Voltage, V
CE(SAT)
(V)
Turn on Voltage, V
BE(ON)
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, I
C
(A)
Saturation Voltage, V
CE(SAT)
(V)
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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