Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http://www.frontierusa.com
1A SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIERS
US1A-LFR THRU US1M-LFR
FEATURES
FOR SURFACE MOUNTED APPLICATIONS
LOW PROFILE PACKAGE
BUILT-IN STRAIN RELIEF
EASY PICK AND PLACE
PLASTIC MATERIAL USED CARRIES UNDERWRITERS
LABORATORY CLASSIFICATION 94 V-0
ULTRA FAST SWITCHING
GLASS PASSIVATED CHIP JUNCTION
HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS AT
TERMINALS
ROHS
MECHANICAL DATA
CASE: MOLDED PLASTIC, DO-214AC (SMA),
DIMENSIONS IN INCHES AND (MILLIMETERS)
TERMINALS: SOLDER PLATED
POLARITY: INDICATED BY CATHODE BAND
WEIGHT: 0.064 GRAMS
SOLDERING PAD
CATHODE
.087(2.2)
.065(1.65)
.040(1.25)
.071(1.8)
.220(5.6)
.192(4.9)
.190(4.8)
.157(4.0)
.177(4.5)
.110(2.8)
.090(2.3)
.100(2.6)
.080(2.0)
.071(1.8)
.035(0.9)
.080(2.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%
RATINGS
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
MAXIMUM RMS VOLTAGE
MAXIMUM DC BLOCKING VOLTAGE
MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT
AT TL=90°C
MAXIMUM OVERLOAD SURGE
8.3ms SINGLE HALF SINE-WAVE
TYPICAL JUNCTION CAPACITANCE (NOTE 1)
TYPICAL THERMAL RESISTANCE (NOTE 2)
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE
SYMBOL
US1A-LF
US1D-LF US1G-LF US1J-LF US1K-LF US1M-LF
US1B-LFR
UNITS
R
R
R
R
R
R
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
θ
JL
T
STG
T
OP
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
20
30
-55 TO + 150
-55 TO + 125
15
PF
°C/W
℃
℃
ELECTRICAL CHARACTERISTICS (A
T
T
A
=25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
MAXIMUM FORWARD VOLTAGE AT 1.0A AND 25℃
MAXIMUM REVERSE CURRENT AT 25℃
SYMBOL
US1D-LF US1G-LF US1J-LF US1K-LF US1M-LF
US1A-LF
UNITS
US1B-LFR
R
R
R
R
R
R
V
F
I
R
1.0
1.3
10
1.7
V
μA
MAXIMUM REVERSE RECOVERY TIME (NOTE 3)
T
RR
50
MARKING
US1A
US1B
US1D
US1G
NOTE: 1. MEASURED AT 1.0 MHZ AND APPLIED REVERSE VOLTAGE OF 4.0 V
2. THERMAL RESISTANCE FROM JUNCTION TO TERMINAL 5.0mm
2
(.013 mm THICK) LAND AREAS
3. REVERSE RECOVERY TEST CONDITIONS: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25 A
75
US1J
US1K
US1M
nS
US1A-LFR THRU US1M-LFR
Page: 1
RATINGS AND CHARACTERISTIC CURVE US1A-LFR THRU US1M-LFR
FIG. 1-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
50Ω
NO INDUCTIVE
10Ω
NO INDUCTIVE
Trr
FIG. 2-TYPICAL FORWARD
CURRENT DERATING CURVE
(-)
D.U.T.
(+)
25 V
dc
(approx)
PULSE
GENERATOR
(NOTE 2)
1Ω
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
+0.5A
AVERAGE FORWARD
CURRENT (A)
2.0
Single Phase Half Wave
60 Hz Resistive or Inductive Load
0
-0.25A
1.0
P.C.B MOUNTED ON
0.3×0.3”(8.0×8.0mm)
COPPER PAD
(-)
(+)
NOTE: 1. RISE TIME=7ns MAX. INPUT
IMPEDANCE=1 MOhms 22PF
2. RISE TIME =10ns MAX. SOURCE
IMPEDANCE=50 OHMS
-1.0A
1cm
0
25 50 75 100 125 150 175
LEAD TEMPERATURE (
o
C)
SET TIME BASE
FOR 10/20 ns/cm
FIG. 3-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT (uA)
FIG. 4-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT (A)
1000
100
100
US1A-LF ~US1D-LF
10
10
T
J
=100
o
C
T
J
=80
o
C
T
J
=25
o
C
20
40
60
80
100
120 140
1
US1G-LF
1
.1
US1J-LF ~US1M-LF
0.1
.01
.2 .4
.6
.8
1.0
1.2 1.4 1.6 1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5-MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
FIG. 6-TYPICAL JUNCTION CAPACITANCE
50
PEAK FORWARD SURGE CURRENT (A)
200
100
JUNCTION CAPACITANCE (pF)
8.3 ms Single Half Sine Wave
(JEDEC Method)
T
J
=25
o
C
US1A-LF ~US1G-LF
40
30
40
20
10
6
4
2
1
US1J-LF
US1M LF
20
10
0
0
1 2
4 6
10
20
40 60
100
NUMBER OF CYCLES AT 60 Hz
.1 .2
.4
1.0 2
4
10 20 40
100
REVERSE VOLTAGE (V)
US1A-LFR THRU US1M-LFR
Page: 2
NXP MCU
