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US1M-HE3

DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode

器件类别：分立半导体    二极管   

厂商名称：Vishay(威世)

厂商官网：http://www.vishay.com

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
零件包装代码
DO-214AC
包装说明
R-PDSO-C2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, HIGH RELIABILITY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.7 V
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
30 A
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
认证状态
Not Qualified
最大重复峰值反向电压
1000 V
最大反向恢复时间
0.075 µs
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
40
文档预览
US1A thru US1M
Vishay General Semiconductor
Surface Mount Ultrafast Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
1.0 A
50 V to 1000 V
30 A
50 ns, 75 ns
1.0 V, 1.7 V
150 °C
DO-214AC (SMA)
Features
•
•
•
•
•
•
•
•
Low profile package
Ideal for automated placement
Glass passivated chip junction
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-214AC (SMA)
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Device Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 110 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
Symbol
US1A
UA
50
35
50
US1B
UB
100
70
100
US1D
UD
200
140
200
US1G US1J US1K US1M
UG
400
280
400
1.0
30
- 55 to + 150
UJ
600
420
600
UK
800
560
800
UM
1000
700
1000
V
V
V
A
A
°C
Units
Document Number 88768
05-Aug-05
www.vishay.com
1
US1A thru US1M
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Test condition
Symbol
V
F
I
R
t
rr
C
J
50
15
US1A
US1B
1.0
10
50
75
10
US1D US1G US1J US1K US1M
1.7
Units
V
µA
ns
pF
Maximum instantaneous forward at 1.0 A
(1)
voltage
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
T
A
= 25 °C
T
A
=100 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum thermal resistance
(1)
Symbol
R
θJA
R
θJL
US1A
US1B US1D US1G
75
27
US1J
US1K
US1M
Units
°C/W
Notes:
(1) P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad area
www.vishay.com
2
Document Number 88768
05-Aug-05
US1A thru US1M
Vishay General Semiconductor
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
Instantaneous Reverse Leakage Current (µA)
1.2
100
T
j
= 150 °C
10
T
j
= 125 °C
Average Forward Rectified Current (A)
Resistive or Inductive Load
1.0
0.8
0.6
0.4
0.2
0.2 x 0.2” (5.0 x 5.0 mm)
Copper Pad Areas
0
25
50
75
100
125
150
T
j
= 100 °C
1
0,1
US1A-US1G
T
j
= 25 °C
0
0,01
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics
30
100
T
L
= 110 °C
8.3
ms Single Half Sine-Wave
25
Instantaneous Forward Current (A)
Peak Forward Surge Current (A)
T
j
= 150 °C
10
T
j
= 125 °C
20
15
10
5
1
T
j
= 100 °C
0,1
T
j
= 25 °C
US1J-US1M
0
1
10
100
0,01
0,2
0,7
1,2
1,7
2,2
2,7
3,2
Number
of Cycles at 60 Hz
Instantaneous Forward
Voltage
(V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Instantaneous Forward Characteristics
100
Instantaneous Reverse Leakage Current (µA)
1000
T
j
= 150 °C
100
T
j
= 125 °C
Instantaneous Forward Current (A)
10
T
j
= 125 °C
1
T
j
= 150 °C
10
T
j
= 100 °C
1
US1J-US1M
0,1
T
j
= 25 °C
0,1
T
j
= 100 °C
US1A-US1G
T
j
= 25 °C
0,01
0,3
0,5
0,7
0,9
1,1
0,01
0
20
40
60
80
100
1,3
1,5
1,7
Instantaneous Forward
Voltage
(V)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 6. Typical Reverse Leakage Characteristics
Document Number 88768
05-Aug-05
www.vishay.com
3
US1A thru US1M
Vishay General Semiconductor
100
100
pF - Junction Capacitance
US1A - US1G
Transient Thermal Impedance (°C/W)
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
10
10
US1J - US1M
1
1
0.1
1
10
0.1
0.01
0.1
1
10
100
Reverse
Voltage
(V)
t - Pulse Duration (sec.)
Figure 7. Typical Junction Capacitance
Figure 8. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 MIN.
(1.68 MIN.)
0.110 (2.79)
0.100 (2.54)
0.074 MAX.
(1.88 MAX.)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
0.208
(5.28) REF
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
www.vishay.com
4
Document Number 88768
05-Aug-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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参数对比
与US1M-HE3相近的元器件有：US1G-HE3、US1A-HE3、US1J-E3、US1K-HE3、US1B-HE3、US1A-E3、US1D-HE3、US1D-E3、US1J-HE3。描述及对比如下：
型号 US1M-HE3 US1G-HE3 US1A-HE3 US1J-E3 US1K-HE3 US1B-HE3 US1A-E3 US1D-HE3 US1D-E3 US1J-HE3
描述 DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode Rectifier Diode, 1 Element, 1A, 600V V(RRM), DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode Rectifier Diode, 1 Element, 1A, 50V V(RRM), DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode Rectifier Diode, 1 Element, 1A, 200V V(RRM), DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合 符合
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.7 V 1 V 1 V 1.7 V 1.7 V 1 V 1 V 1 V 1 V 1.7 V
JESD-609代码 e3 e3 e3 e3 e3 e3 e3 e3 e3 e3
湿度敏感等级 1 1 1 1 1 1 1 1 1 1
最大非重复峰值正向电流 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A
元件数量 1 1 1 1 1 1 1 1 1 1
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
最大重复峰值反向电压 1000 V 400 V 50 V 600 V 800 V 100 V 50 V 200 V 200 V 600 V
最大反向恢复时间 0.075 µs 0.05 µs 0.05 µs 0.075 µs 0.075 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.075 µs
表面贴装 YES YES YES YES YES YES YES YES YES YES
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
是否无铅 不含铅 不含铅 不含铅 - 不含铅 不含铅 - 不含铅 - 不含铅
厂商名称 Vishay(威世) - - - Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
零件包装代码 DO-214AC DO-214AC DO-214AC - DO-214AC DO-214AC - DO-214AC - DO-214AC
包装说明 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 - R-PDSO-C2 R-PDSO-C2 - R-PDSO-C2 - R-PDSO-C2
针数 2 2 2 - 2 2 - 2 - 2
其他特性 FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY - FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY - FREE WHEELING DIODE, HIGH RELIABILITY - FREE WHEELING DIODE, HIGH RELIABILITY
二极管元件材料 SILICON SILICON SILICON - SILICON SILICON - SILICON - SILICON
JEDEC-95代码 DO-214AC DO-214AC DO-214AC - DO-214AC DO-214AC - DO-214AC - DO-214AC
JESD-30 代码 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 - R-PDSO-C2 R-PDSO-C2 - R-PDSO-C2 - R-PDSO-C2
端子数量 2 2 2 - 2 2 - 2 - 2
最低工作温度 -55 °C -55 °C -55 °C - -55 °C -55 °C - -55 °C - -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR - RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE - SMALL OUTLINE
峰值回流温度（摄氏度） 260 260 260 - 260 260 - 260 - 260
认证状态 Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified - Not Qualified - Not Qualified
端子形式 C BEND C BEND C BEND - C BEND C BEND - C BEND - C BEND
端子位置 DUAL DUAL DUAL - DUAL DUAL - DUAL - DUAL
处于峰值回流温度下的最长时间 40 40 40 - 40 40 - 40 - 40
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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