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US2A

2 A, 50 V, SILICON, RECTIFIER DIODE

器件类别:分立半导体    高效整流二极管   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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器件:US2A

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器件参数
参数名称
属性值
封装类型
Case Style
SMB
Maximum average forward rectified curre
2
Maximum recurrent peak reverse voltage
50
Peak forward surge curre
50
Maximum instantaneous forward voltage
1.0
Maximum reverse curre
10
TRR(nS)
50
class
Diodes
文档预览
US2A-US2M
Surface Mount Rectifiers
REVERSE VOLTAGE: 50 - 1000 V
FORWARD CURRENT: 2.0 A
Features
vvvv
Plastic package has
underwriters laboratories
vflam
mability
classification
94V-0
For surface mount applications
Glass passivated chip junctions
Low profile package
Easy pick and place
Ultrafast recovery times for high efficiency
Low forward voltage,low power loss
Built-in strain relief,ideal for autom ated placem ent
111
High temperature soldering:
250
o
C/10 seconds on terminals
2.3± 0.15
DO-214AA(SMB)
4.7± 0.25
2.0± 0.15
5.4± 0.2
Case:JEDEC DO-214AA,m olded plastic body over
passivated chip
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C am bient tem perature unless otherwise specified
US2A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
L
=90
O
C
Peak forw ard surge current 8.3ms single half-
sine-w ave superimposed on rated load(JEDEC
Method)
Maximum instantaneous forw ard voltage at 2A
Maximum DC reverse current
at rated DC blockjing voltage
@T
A
=25
o
C
@T
A
=125
o
C
US2B
100
70
100
0.203MAX
Mechanical Data
1.3± 0.2
3.6± 0.3
0.2± 0.05
US2D
200
140
200
US2G
400
280
400
2.0
50
US2J
600
420
600
US2K
800
560
800
US2M
1000
700
1000
UNITS
V
V
V
A
A
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
R
JA
JL
50
35
50
1.0
10
350
50
50
40
15
-55--------+150
-55--------+150
1.7
V
Maximum reverse recovery time at I
F
=0.5A
I
R
=1.0A I
rr
=0.25A
Typical junction capacitance at 4.0V,1MH
Z
Maximum thermal resistance (NOTE1)
Operating temperature range
Storage temperature range
75
30
o
ns
pF
C/W
o
o
T
J
T
STG
C
C
NOTE: 1.P.C.B.mounted on 0.2X0.2"(5.0X5.0mm)copper pad area
http://www.luguang.cn
mail:lge@luguang.cn
US2A-US2M
Surface Mount Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
2 .4
2 .0
PEAK FORWARD SURGE
CURRENT,AMPERES
R E S IS T IV E O R IN D U C T IV E
LOAD
45
40
35
30
25
20
15
10
5
0
1
TL=110
8 .3 m s S I N G L E H A L F S I N E - W A V E
(J E D E C M E T H O D )
1 .4
1 .0
0 .8
0 .4
0 .2 X 0 .2 " (5 .0 X 5 .0 m m )
CO PPER PAD
AREAS
0
0
25
50
75
100
125
150
10
100
LEAD TEMPERATURE
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
0
NUMBER OF CYCLES AT 60HZ
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS FORWARD
CURRENT,AMPERES
US2A-US2G
100
INSTANTANEOUS REVERSE
LEAKAGE CURRENT(mA)
T
J
=125
10
125
100℃
US2J-US2M
1
1
0.1
25℃
0.1
0.01
0.4
0.6
0.8
PULSE WIDTH=300
s1%DUTY CYCLE
T
J
=25
1.0
1.2
1.4
1.6
1.8
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE(V)
FIG.5 -- TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE
(
O
C/W)
JUNCTION CAPACITANCE(pF)
200
100
60
40
20
10
6
4
    
T
J
=25
US2K,US2M
PERCENT OF RATED PEAK REVERSE VOLTAGE. (
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
100
)
US2A-US2J
10
1
2
1
0.1 0.2
0.4
1
2
0.1
0.01
0.1
1
10
100
4
10
20
40
100
REVERSE VOLTAGE(V)
T,PULSE DURATION,
http://www.luguang.cn
mail:lge@luguang.cn
查看更多>
参数对比
与US2A相近的元器件有:US2B、US2D、US2J、US2K、US2M。描述及对比如下:
型号 US2A US2B US2D US2J US2K US2M
描述 2 A, 50 V, SILICON, RECTIFIER DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 1000 V, SILICON, RECTIFIER DIODE
零件包装代码 - SMB SMB SMB SMB SMB
制造商包装代码 - SMB SMB SMB SMB SMB
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