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SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A

TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM8G48,USM8G48,SM8J48,USM8J48

SM8G48A,USM8G48A,SM8J48A,USM8J48A

AC POWER CONTROL APPLICATIONS

Repetitive Peak Off−State Voltage

R.M.S On−State Current

Gate Trigger Current

: I

= 30mA Max.

: I

= 20mA Max. (“A”Type)

Unit: mm

SM8G48, SM8J48, SM8G48A, SM8J48A

USM8G48, USM8J48, USM8G48A, USM8J48A

: V

DRM

= 400, 600V

: I

T (RMS)

= 8A

JEDEC

JEITA

TOSHIBA

―

13-10J1A

JEDEC

JEITA

TOSHIBA

―

13-10J2A

Weight: 1.7g

MAXIMUM RATINGS

CHARACTERISTIC

Repetitive Peak

Off-State Voltage

(U)SM8G48

(U)SM8G48A

(U)SM8J48

(U)SM8J48A

SYMBOL

RATING

400

DRM

600

T (RMS)

TSM

I t

di / dt

G (AV)

stg

UNIT

80 (50Hz)

88 (60Hz)

0.5

−40~125

A s

A / µs

°C

R.M.S On−State Current

Peak One Cycle Surge On−State

Current (Non-Repetitive)

I t Limit Value

Critical Rate of Rise of On−State

Current

(Note 1)

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Forward Gate Voltage

Peak Forward Gate Current

Junction Temperature

Storage Temperature Range

Note 1: V

DRM

= 0.5×Rated

≤

12A

≥

≤

250ns

= I

×2.0

2001-07-10

SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A

ELECTRICAL CHARACTERISTICS

(Ta = 25°C)

CHARACTERISTIC

Repetitive Peak Off−State Current

Gate Trigger Voltage

III

(U)SM8G48

(U)SM8J48

Gate Trigger

Current

(U)SM8G48A

(U)SM8J48A

III

Peak On−State Voltage

Gate Non−Trigger Voltage

Holding Current

Thermal Resistance

Critical Rate of

Rise of Off−State

Voltage

Critical Rate of

Rise of Off−State

Voltage at

Commutation

(U)SM8G48

(U)SM8J48

(U)SM8G48A

(U)SM8J48A

(U)SM8G48

(U)SM8J48

(U)SM8G48A

(U)SM8J48A

th (j−c)

= 12A

= Rated, Tc = 125°C

= 12V, I

= 1A

Junction to Case, AC

DRM

= Rated, T

= 125°C

Exponential Rise

= 12V

= 20Ω

= 12V

= 20Ω

SYMBOL

DRM

TEST CONDITION

DRM

= Rated

T2 (+), Gate (+)

T2 (+), Gate (−)

T2 (−), Gate (−)

T2 (−), Gate (+)

T2 (+), Gate (+)

T2 (+), Gate (−)

T2 (−), Gate (−)

T2 (−), Gate (+)

T2 (+), Gate (+)

T2 (+), Gate (−)

T2 (−), Gate (−)

T2 (−), Gate (+)

MIN

―

0.2

―

TYP.

―

300

200

―

MAX

1.5

―

1.5

―

2.8

―

V / µs

―

V / µs

―

°C / W

UNIT

µA

dv / dt

(dv / dt) c

DRM

= 400V, T

= 125°C

(di / dt) c =

−4.5A

/ ms

MARKING

NUMBER

SYMBOL

SM8G48, SM8G48A, USM8G48, USM8G48A

TYPE

SM8J48, SM8J48A, USM8J48, USM8J48A

SM8G48A, SM8J48A, USM8G48A, USM8J48A

Example

8A : January 1998

8B : Febrary 1998

8L : December 1998

MARK

M8G48

M8J48

2001-07-10

SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A

2001-07-10

SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A

2001-07-10

SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under

any intellectual property or other rights of TOSHIBA CORPORATION or others.

The information contained herein is subject to change without notice.

2001-07-10

参数对比

与USM8J48相近的元器件有：SM8G48、SM8J48、USM8G48、USM8J48A、USM8G48A、SM8J48A、SM8G48A、M8J48、M8G48。描述及对比如下：

型号	USM8J48	SM8G48	SM8J48	USM8G48	USM8J48A	USM8G48A	SM8J48A	SM8G48A	M8J48	M8G48
描述	AC POWER CONTROL APPLICATIONS	AC POWER CONTROL APPLICATIONS	AC POWER CONTROL APPLICATIONS	AC POWER CONTROL APPLICATIONS	AC POWER CONTROL APPLICATIONS	AC POWER CONTROL APPLICATIONS	AC POWER CONTROL APPLICATIONS	AC POWER CONTROL APPLICATIONS	AC POWER CONTROL APPLICATIONS	AC POWER CONTROL APPLICATIONS
是否无铅	含铅	-	-	含铅	含铅	含铅	含铅	含铅	-	-
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	-	-
零件包装代码	TO-220SM	TO-220FL	TO-220FL	TO-220SM	TO-220SM	TO-220SM	TO-220FL	TO-220FL	-	-
包装说明	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	-	-
针数	3	3	3	3	3	3	3	3	-	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	-	-
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	-
换向电压的临界上升率-最小值	10 V/us	10 V/us	10 V/us	10 V/us	4 V/us	4 V/us	4 V/us	4 V/us	-	-
最大直流栅极触发电流	30 mA	30 mA	30 mA	30 mA	20 mA	20 mA	20 mA	20 mA	-	-
最大直流栅极触发电压	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	-	-
最大维持电流	50 mA	50 mA	50 mA	50 mA	50 mA	50 mA	50 mA	50 mA	-	-
JESD-30 代码	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	-	-
元件数量	1	1	1	1	1	1	1	1	-	-
端子数量	2	3	3	2	2	2	3	3	-	-
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	-	-
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
封装形式	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE	-	-
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-
最大均方根通态电流	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A	-	-
重复峰值关态漏电流最大值	20 µA	20 µA	20 µA	20 µA	20 µA	20 µA	20 µA	20 µA	-	-
断态重复峰值电压	600 V	400 V	600 V	400 V	600 V	400 V	600 V	400 V	-	-
表面贴装	YES	NO	NO	YES	YES	YES	NO	NO	-	-
端子形式	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	-	-
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	-
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
触发设备类型	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	TRIAC	-	-