UNISONIC TECHNOLOGIES CO., LTD
UT75N02
Preliminary
Power MOSFET
75A, 25V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UT75N02
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
1
TO- 251
FEATURES
* R
DS(ON)
< 7mΩ @ V
GS
=10V
* R
DS(ON)
< 8mΩ @ V
GS
=7V
1
TO-220
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT75N02L-TA3-T
UT75N02G-TA3-T
UT75N02L-TM3-T
UT75N02G-TM3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-251
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
V
DSS
25
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
I
D
75
A
Pulsed Drain Current (Note 2)
I
DM
170
A
Avalanche Current
I
AR
60
A
Avalanche Energy
L=0.1mH
E
AS
140
mJ
Repetitive Avalanche Energy (Note 3) L=0.05mH
E
AR
5.6
mJ
TO-220
40
Power Dissipation
P
D
W
TO-251
28
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. Duty cycle≤1%.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-251
TO-220
TO-251
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
3.13
4.53
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UT75N02
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
V
DS
= 20V, V
GS
= 0V
V
DS
=20V, V
GS
= 0V, T
J
= 125°C
V
DS
=0V, V
GS
=±20V
MIN
25
25
250
±250
1
70
1.5
5
6
5000
1800
800
7
7
24
6
140
40
75
1.3
75
3
7
8
TYP MAX UNIT
V
µA
µA
nA
V
A
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
=250µA
On-State Drain Current (Note 1)
I
D(ON)
V
DS
= 10V, V
GS
= 10V
Static Drain-Source On-Resistance
V
GS
= 10V, I
D
= 30A
R
DS(ON)
(Note 1)
V
GS
= 7V, I
D
= 24A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=15V, V
GS
=0 V, f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS (Note 2)
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DS
= 15V, V
GS
= 10V, I
D
≈30A
Turn-OFF Delay Time
t
D(OFF)
R
GS
= 2.5Ω, R
L
= 1Ω,
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
=0.5V
(BR)DSS
, V
GS
=10V, I
D
=35A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward Voltage (Note 1)
V
SD
I
F
= I
S
, V
GS
= 0V
Continuous Current
I
S
Notes: 1. Pulse test : Pulse Width≤300μsec, Duty Cycle≤2%
2. Independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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