VHF 15
Half Controlled
Single Phase Rectifier Bridge
with Freewheeling Diode
I
dAVM
= 21 A
V
RRM
= 800-1600 V
V
RSM
V
DSM
V
900
1300
1500
1700
V
RRM
V
DRM
V
800
1200
1400
1600
Type
6
4
2
1
3
4
1
2
3
6
VHF 15-08io5
VHF 15-12io5
VHF 15-14io5
VHF 15-16io5
8
8
Symbol
I
dAV
I
dAVM
x
I
FRMS
, I
TRMS
I
FSM
, I
TSM
Test Conditions
T
K
= 85°C, module
module
per leg
T
VJ
= 45°C;
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
repetitive, I
T
= 50 A
Maximum Ratings
15
21
15
190
210
170
190
160
180
140
145
150
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/ms
Features
Package with DCB ceramic base
plate
Isolation voltage 3600 V~
Planar passivated chips
1/4" fast-on terminals
UL registered E 72873
q
q
q
q
q
I
2
t
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
Applications
Supply for DC power equipment
DC motor control
q
q
(di/dt)
cr
T
VJ
= 125°C
f =50 Hz, t
P
=200
ms
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
di
G
/dt = 0.3 A/ms
q
q
q
non repetitive, I
T
= 1/2 • I
dAV
500
1000
10
A/ms
V/ms
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
(dv/dt)
cr
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
R
GK
=
¥;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
p
= 30
ms
t
p
= 500
ms
t
p
= 10 ms
£
£
£
Dimensions in mm (1 mm = 0.0394")
V
W
W
W
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
10
5
1
0.5
-40...+125
125
-40...+125
50/60 Hz, RMS
I
ISOL
£
1 mA
Mounting torque
t = 1 min
t=1s
(M5)
(10-32 UNF)
3000
3600
2-2.5
18-22
50
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
x
for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-3
VHF 15
Symbol
I
R
, I
D
V
T
, V
F
V
T0
r
T
V
GT
I
GT
Test Conditions
V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 45 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 125°C
V
D
= 2/3 V
DRM
V
D
= 2/3 V
DRM
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 125°C
£
£
£
£
£
£
£
£
£
£
£
£
typ.
T
VJ
= T
VJM
T
VJ
= 25°C
Characteristic Values
£
£
£
5
0.3
2.8
1.0
40
1.0
1.2
65
80
50
0.2
5
150
200
100
100
2
150
75
2.4
0.6
3.0
0.75
12.6
6.3
50
mA
mA
V
V
mW
V
V
mA
mA
mA
V
mA
mA
mA
mA
mA
ms
ms
mC
K/W
K/W
K/W
K/W
mm
mm
m/s
2
1000
µs
t
gd
100
typ.
Limit
T
VJ
= 25°C
0.1
1
1
10
1: I
GT
, T
VJ
= 125°C
V
V
G
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
2
3
6
4
5
V
GD
I
GD
I
L
T
VJ
= T
VJM
;
T
VJ
= T
VJM
;
I
G
= 0.3 A; t
G
= 30
ms;
di
G
/dt = 0.3 A/ms;
I
GD
, T
VJ
= 125°C
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
1
10
100
1000
I
G
mA
I
H
t
gd
t
q
Q
r
R
thJC
R
thJK
d
S
d
A
a
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
¥
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 0.3 A; di
G
/dt = 0.3 A/ms
T
VJ
= 125°C, I
T
= 15 A, t
P
= 300
ms,
V
R
= 100 V
di/dt = -10 A/ms, dv/dt = 20 V/ms, V
D
= 2/3 V
DRM
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creepage distance on surface
Creepage distance in air
Max. allowable acceleration
Fig. 1 Gate trigger range
10
1
10
100
I
G
mA 1000
Fig. 2 Gate controlled delay time t
gd
© 2000 IXYS All rights reserved
2-3
750
VHF 15
Fig. 3 Surge overload current per chip
I
FSM
: Crest value, t: duration
Fig. 4 I
2
t versus time (1-10 ms)
per chip
Fig. 5 Max. forward current at
heatsink temperature
Fig. 6 Power dissipation versus direct output current and ambient temperature
Constants for Z
thJK
calculation:
i
1
2
3
R
thi
(K/W)
0.34
1.16
1.5
t
i
(s)
0.0344
0.12
0.5
Fig. 7 Transient thermal impedance junction to heatsink per chip
© 2000 IXYS All rights reserved
3-3
