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VN2222

230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

器件类别:半导体    分立半导体   

厂商名称:Calogic

厂商官网:http://www.calogic.net/

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器件参数
参数名称
属性值
端子数量
3
最小击穿电压
60 V
加工封装描述
TO-92, 3 PIN
状态
DISCONTINUED
包装形状
包装尺寸
圆柱形的
端子形式
THROUGH-孔
端子涂层
锡 铅
端子位置
BOTTOM
包装材料
塑料/环氧树脂
结构
单一的 WITH BUILT-IN 二极管
元件数量
1
晶体管应用
开关
晶体管元件材料
通道类型
N沟道
场效应晶体管技术
金属-OXIDE SEMICONDUCTOR
操作模式
ENHANCEMENT
晶体管类型
通用小信号
最大漏电流
0.2300 A
反馈电容
8 pF
最大漏极导通电阻
7.5 ohm
文档预览
VN2222 Series
N-Channel Enhancement-Mode
MOS Transistors
VN2222 Series
FEATURES
CORPORATION
Low r
DS(on)
<7.5Ω
Switching
Amplification
PIN CONNECTIONS
ORDERING INFORMATION
Part
Package
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
VN2222LL
Plastic TO-92
VN2222LM
Plastic TO-237
For sorted chips in carriers see 2N7000
APPLICATIONS
BOTTOM VIEW
BOTTOM VIEW
3
TO-92
(TO-226AA)
2
1
1 2 3
1. SOURCE
2. GATE
3. DRAIN
TO-237
1 2 3
1. SOURCE
2. GATE
3. TAB-DRAIN
CD5
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
T
L
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
1
LIMITS
VN2222LL
60
±30
VN2222LM
60
±30
0.26
0.16
1
1
0.4
-55 to 150
300
UNITS
V
T
A
= 25
o
C
T
A
= 100 C
o
o
0.23
0.14
1
A
T
A
= 25 C
T
A
= 100 C
o
0.8
0.32
W
o
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
C
THERMAL RESISTANCE RATINGS
SYMBOL
R
thJA
1
THERMAL RESISTANCE
Junction-to-Ambient
LIMITS
VN2222LL
156
VN2222LM
125
UNITS
K/W
Pulse width limited by maximum junction temperature.
VN2222 Series
CORPORATION
SPECIFICATIONS
a
SYMBOL
STATIC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
70
2.3
60
PARAMETER
TYP
b
LIMITS
MIN
MAX
UNIT
TEST CONDITIONS
V
0.6
2.5
±100
10
500
On-State Drain Current
c
1000
5
750
7.5
7.5
13.5
100
mS
µS
mA
nA
µA
I
D
= 100µA, V
GS
= 0V
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= 48V, V
GS
= 0V
T
J
= 125
o
C
V
DS
= 10V, V
GS
= 10V
V
GS
= 5V, I
D
= 0.2A
V
GS
= 10V, I
D
= 0.5A
T
J
= 125
o
C
V
DS
= 10V, I
D
= 0.5A
V
DS
= 10V, I
D
= 0.2A
r
DS(ON)
Drain-Source On-Resistance
c
2.5
4.4
g
FS
g
OS
DYNAMIC
C
iss
C
oss
C
rss
SWITCHING
t
ON
t
OFF
Notes:
Forward Transconductance
c
Common Source Output Conductance
c
230
1200
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
16
11
2
60
25
5
pF
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Turn-On Time
Turn-Off Time
7
7
10
ns
10
V
DD
= 15V, R
L
= 23Ω, I
D
= 0.6A
V
GEN
= 10V, R
G
= 25Ω
(Switching time is essentially independent of
operating temperature)
a. T
A
= 25
o
C unless otherwise noted.
b. For design aid only, not subject to production testing.
c. Pulse test; PW =
≤300µS,
duty cycle
≤2%.
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参数对比
与VN2222相近的元器件有:VN2222LM、VN2222LL。描述及对比如下:
型号 VN2222 VN2222LM VN2222LL
描述 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
端子数量 3 3 3
端子形式 THROUGH-孔 WIRE WIRE
端子位置 BOTTOM BOTTOM BOTTOM
元件数量 1 1 1
晶体管应用 开关 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
是否Rohs认证 - 不符合 不符合
零件包装代码 - TO-237AA TO-92
包装说明 - CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
针数 - 3 3
Reach Compliance Code - unknow compli
ECCN代码 - EAR99 EAR99
配置 - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 - 60 V 60 V
最大漏极电流 (Abs) (ID) - 0.25 A 0.099 A
最大漏极电流 (ID) - 0.26 A 0.23 A
最大漏源导通电阻 - 7.5 Ω 7.5 Ω
FET 技术 - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss) - 5 pF 5 pF
JEDEC-95代码 - TO-237AA TO-92
JESD-30 代码 - O-PBCY-W3 O-PBCY-W3
JESD-609代码 - e0 e0
工作模式 - ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 - 150 °C 150 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - ROUND ROUND
封装形式 - CYLINDRICAL CYLINDRICAL
极性/信道类型 - N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) - 1 W 0.4 W
认证状态 - Not Qualified Not Qualified
表面贴装 - NO NO
端子面层 - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches - 1 1
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