VSMY2941RGX01, VSMY2941GX01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm,
Surface Emitter Technology
VSMY2941RGX01
VSMY2941GX01
FEATURES
Package type: surface-mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
Peak wavelength:
λ
p
= 940 nm
AEC-Q101 qualified
High radiant power
Very high radiant intensity
Angle of half intensity:
ϕ
= ± 8°
Terminal configurations: gullwing or reverse
gullwing
• Package matches with detector VEMD2000X01 series
• Floor life: 4 weeks, MSL 2a, according to J-STD-020
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
•
•
•
•
•
DESCRIPTION
As part of the
SurfLight
TM
portfolio, the VSMY2941X01
series are infrared, 940 nm emitting diodes based on GaAlAs
surface emitter chip technology with extreme high radiant
intensities, high optical power and high speed, molded in
clear, untinted plastic packages (with lens) for surface
mounting (SMD).
APPLICATIONS
•
•
•
•
Miniature light barrier
Photointerrupters
Optical switch
Emitter source for proximity sensors
PRODUCT SUMMARY
COMPONENT
VSMY2941RGX01
VSMY2941GX01
Note
• Test conditions see table “Basic Characteristics“
I
e
(mW/sr)
160
160
ϕ
(deg)
±8
±8
λ
P
(nm)
940
940
t
r
(ns)
5
5
ORDERING INFORMATION
ORDERING CODE
VSMY2941RGX01
VSMY2941GX01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction-to-ambient
Rev. 1.0, 08-Nov-17
According to Fig. 10, J-STD-020
J-STD-051, soldered on PCB
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
70
140
500
120
100
-40 to +85
-40 to +100
260
250
UNIT
V
mA
mA
mA
mW
°C
°C
°C
°C
K/W
Document Number: 84573
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY2941RGX01, VSMY2941GX01
www.vishay.com
Vishay Semiconductors
80
P
V
- Power Dissipation (mW)
120
100
80
60
40
20
0
0
20
40
60
80
100
R
thJA
= 250 K/W
I
F
- Forward Current (mA)
70
60
50
40
30
20
10
0
0
20
40
60
80
100
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant power
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
I
F
= 50 mA
I
F
= 70 mA
I
F
= 70 mA
I
F
= 70 mA, 10 % to 90 %
I
F
= 70 mA, 10 % to 90 %
V
R
= 0 V, f = 1 MHz, E = 0
mW/cm
2
I
F
= 50 mA, t
p
= 20 ms
I
F
= 70 mA, t
p
= 20 ms
I
F
= 500 mA, t
p
= 100 μs
I
F
= 70 mA, t
p
= 20 ms
I
F
= 50 mA
TEST CONDITION
I
F
= 50 mA, t
p
= 20 ms
I
F
= 70 mA, t
p
= 20 ms
I
F
= 500 mA, t
p
= 100 μs
I
F
= 50 mA
SYMBOL
V
F
V
F
V
F
TK
VF
I
R
C
J
I
e
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
MIN.
-
-
-
-
-
60
-
-
-
-
-
920
-
-
-
-
TYP.
1.4
1.5
2.6
-0.7
30
115
160
850
40
-0.2
±8
940
55
0.28
5
6
MAX.
1.7
-
-
-
-
170
-
-
-
-
-
960
-
-
-
-
UNIT
V
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Not designed for reverse operation
Rev. 1.0, 08-Nov-17
Document Number: 84573
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY2941RGX01, VSMY2941GX01
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
115
110
105
100
95
90
85
-60 -40 -20
0
20
40
60
80
100
I
F
= 50 mA
t
p
= 20 ms
Vishay Semiconductors
I
F
- Forward Current (mA)
t
p
= 100 μs
100
10
1
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
F
- Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
I
e, rel
- Relative Radiant Intensity (%)
T
amb
- Ambient Temperature (°C)
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
V
F, rel
- Relative Forward Voltage (%)
I
F
= 50 mA
t
p
= 20 ms
105
I
e, rel
- Relative Radiant Intensity
110
100%
I
F
= 70 mA
80%
60%
100
40%
95
20%
90
-60 -40 -20
0
20
40
60
80
100
0%
800
850
900
950
1000
1050
T
amb
- Ambient Temperature (°C)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
λ
- Wavelength (nm)
Fig. 7 - Relative Radiant Intensity vs. Wavelength
0°
10
10°
20°
30°
I
e,rel
- Relative Radiant Intensity
(I
e
/ I
e
(70 mA))
t
p
= 100 μs
I
e, rel
- Relative Radiant Intensity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
1
0.1
10
100
I
F
- Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.0, 08-Nov-17
Document Number: 84573
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
VSMY2941RGX01, VSMY2941GX01
www.vishay.com
SOLDER PROFILE
Axis Title
300
Max. 260 °C
Vishay Semiconductors
DRYPACK
10000
250
2nd line
Temperature (°C)
255 °C
240 °C
217 °C
Max. 30 s
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
245 °C
200
150
Max. 120 s
Max. 100 s
Max. ramp down 6 °C/s
Max. ramp up 3 °C/s
1000
1st line
2nd line
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 2a, according to J-STD-020.
100
50
0
0
50
100
100
10
150
Time (s)
200
250
300
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
19841
Fig. 9 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
PACKAGE DIMENSIONS
in millimeters:
VSMY2941RGX01
0.4
0.05 ± 0.1
Ø 1.8 ± 0.1
Z
2.77 ± 0.2
1.6
2.2
2.2
5.8 ± 0.2
0.3
2.3 ± 0.2
exposed copper
0.19
Z 20:1
1.1 ± 0.1
0.5
2.3 ± 0.2
0.4
anode
pin ID
cathode
technical drawings
according to DIN
specifications
0.75
1.7
solder
pad proposal
acc. IPC 7351
Not indicated tolerances ± 0.1
Ø 2.3 ± 0.1
6.7
Drawing-No.: 6.544-5391.03-4
Issue: 2; 19.09.14
Rev. 1.0, 08-Nov-17
Document Number: 84573
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.254
VSMY2941RGX01, VSMY2941GX01
www.vishay.com
PACKAGE DIMENSIONS
in millimeters:
VSMY2941GX01
0.4
Ø 1.8
Vishay Semiconductors
2.77 ± 0.2
X
1.6
0.05
0.19
2.2
2.2
4.2 ± 0.2
exposed copper
0.3
X 20:1
2.3 ± 0.2
0.5
2.3 ± 0.2
0.4
0.6
anode
pin ID
cathode
solder
pad proposal
acc. IPC 7351
technical drawings
according to DIN
specifications
0.75
Not indicated tolerances ± 0.1
2.45
5.15
Drawing-No.: 6.544-5383.03-4
Issue: 2; 19.09.14
Rev. 1.0, 08-Nov-17
Document Number: 84573
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.254
