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W24010S-70LI

Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 0.450 INCH, SOP-32

器件类别：存储    存储   

厂商名称：Winbond(华邦电子)

厂商官网：http://www.winbond.com.tw

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Winbond(华邦电子)
零件包装代码
SOIC
包装说明
0.450 INCH, SOP-32
针数
32
Reach Compliance Code
not_compliant
ECCN代码
EAR99
最长访问时间
100 ns
其他特性
CAN ALSO OPERATE AT 5V SUPPLY
I/O 类型
COMMON
JESD-30 代码
R-PDSO-G32
JESD-609代码
e0
长度
20.45 mm
内存密度
1048576 bit
内存集成电路类型
STANDARD SRAM
内存宽度
8
功能数量
1
端子数量
32
字数
131072 words
字数代码
128000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
128KX8
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP32,.56
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
3/5 V
认证状态
Not Qualified
座面最大高度
3 mm
最大待机电流
0.000005 A
最小待机电流
2 V
最大压摆率
0.07 mA
最大供电电压 (Vsup)
3.3 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
11.3 mm
文档预览
W24010
128K
×
8 CMOS STATIC RAM
GENERAL DESCRIPTION
The W24010 is a normal-speed, very low-power CMOS static RAM organized as 131072
×
8 bits that
operates on a wide voltage range from 2.7V to 5.5V power supply. The W24010 family, W24010-
70SL, W24010-70LE and W24010-70LI, can meet the requirement of various operating temperature.
This device is manufactured using Winbond's high performance CMOS technology.
FEATURES
•
•
•
•
•
Low power consumption:
−
Active: 350 mW (max.)
−
Standby: 15
µW
(max.)/3V
50
µW
(max.)/5V
Access time: 70 nS (max.)/5V
100 nS (max.)/3V
Single 3V/5V power supply
Fully static operation
All inputs and outputs directly TTL compatible
Three-state outputs
•
Battery back-up operation capability
•
Data retention voltage: 2V (min.)
•
Packaged in 32-pin 600 mil DIP, 450 mil SOP,
standard type one TSOP (8 mm
×
20 mm),
reverse type one TSOP (8 mm
×
20 mm),
small type one TSOP (8 mm
×
13.4 mm) and
reverse small type one TSOP (8 mm
×
13.4 mm)
•
PIN CONFIGURATIONS
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
DD
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
BLOCK DIAGRAM
CLK GEN.
A16
A14
A12
A4
A3
A2
A7
A6
A5
A9
I/O1
:
I/O8
DATA
CNTRL.
CLK
GEN.
WE
I/O7
I/O6
I/O5
I/O4
PRECHARGE CKT.
R
O
W
D
E
C
O
D
E
R
CORE CELL ARRAY
1024 ROWS
128 X 8 COLUMNS
I/O CKT.
COLUMN DECODER
A15
A13
A8
A1 A0
A11
A10
CS1
CS2
OE
A11
A9
A8
A13
WE
CS2
A15
V
DD
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-pin
TSOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
V
SS
I/O3
I/O2
I/O1
A0
A1
A2
A3
PIN DESCRIPTION
SYMBOL
A0−A16
I/O1−I/O8
CS1, CS2
WE
OE
V
DD
V
SS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Input
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
A4
A5
A6
A7
A12
A14
A16
NC
V
DD
A15
CS2
WE
A13
A8
A9
A11
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
32-pin
Reverse
TSOP
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
A3
A2
A1
A0
I/O1
I/O2
I/O3
V
SS
I/O4
I/O5
I/O6
I/O7
I/O8
CS1
A10
OE
-1-
Publication Release Date: December 1996
Revision A2
W24010
TRUTH TABLE
CS1
H
X
L
L
L
CS2
X
L
H
H
H
OE
X
X
H
L
X
WE
X
X
H
H
L
MODE
Not Selected
Not Selected
Output Disable
Read
Write
I/O1−I/O8
High Z
High Z
High Z
Data Out
Data In
V
DD
CURRENT
I
SB
, I
SB1
I
SB
, I
SB1
I
DD
I
DD
I
DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Supply Voltage to V
SS
Potential
Input/Output to V
SS
Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
SL
LE
LI
RATING
-0.5 to +7.0
-0.5 to V
DD
+0.5
1.0
-65 to +150
0 to 70
-20 to 85
-40 to 85
UNIT
V
V
W
°C
°C
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(V
DD
= 5V
±10%;
V
DD
= 3V
±10%;
V
SS
= 0V; T
A
(°C) = 0 to 70 for SL, -20 to 85 for LE, -40 to 85 for LI)
PARAMETER
SYM.
TEST CONDITIONS
5V
±10%
MIN.
MAX.
+0.8
V
DD
+0.5
+1
+1
-0.5
+2.2
-1
-1
3V
±10%
MIN.
-0.5
+2.0
-1
-1
MAX.
+0.6
V
DD
+0.5
+1
+1
UNIT
Input Low Voltage
Input High Voltage
Input Leakage
Current
Output Leakage
Current
V
IL
V
IH
I
LI
I
LO
-
-
V
IN
= V
SS
to V
DD
V
I/O
= V
SS
to V
DD,
CS = V
IH
(min.) or
OE = V
IH
(min.) or
WE = V
IL
(max.)
V
V
µA
µA
Output Low Voltage
Output High
Voltage
V
OL
V
OH
I
OL
= +2.1 mA
I
OH
= -1.0 mA
-
2.4
0.4
-
-
2.2
0.4
-
V
V
-2-
W24010
Operating Characteristics, continued
PARAMETER
Operating Power
Supply Current
Standby Power
Supply Current
SYM.
TEST CONDITIONS
5V
±10%
MIN.
MAX.
70
-
3V
±10%
MIN.
-
MAX.
30
UNIT
I
DD
CS = V
IL
(max.), I/O = 0
mA, Cycle = min. Duty =
100%
CS = V
IH
(min.),
Cycle = min. Duty = 100%
CS
≥
V
DD
-0.2V
mA
I
SB
I
SB1
-
-
3
10
-
-
1
5
mA
µA
CAPACITANCE
(V
DD
= 5V, T
A
= 25° C, f = 1 MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYM.
C
IN
C
I/O
CONDITIONS
V
IN
= 0V
V
OUT
= 0V
MAX.
6
8
UNIT
pF
pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
CONDITIONS
3V
±10%,
0V to 2.4V
5V
±10%,
0V to 3.0V
5 nS
1.5V
See the drawing below
AC Test Loads and Waveform
1 TTL
OUTPUT
100 pF
Including
Jig and
Scope
OUTPUT
5 pF
Including
Jig and
Scope
(For T
CLZ,
T
OLZ,
T
CHZ,
T
OHZ,
T
WHZ,
T
OW
)
2.4V/3.0V
0V
5 nS
90%
10%
90%
10%
5 nS
1 TTL
-3-
Publication Release Date: December 1996
Revision A2
W24010
AC Characteristics, continued
(V
DD
= 5V
±10%;
V
DD
= 3V
±10%;
V
SS
= 0V; T
A
(°C) = 0 to 70 for SL, -20 to 85 for LE, -40 to 85 for LI)
Read Cycle
PARAMETER
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Selection to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
∗These
parameters are sampled but not 100% tested
SYM.
MIN.
T
RC
T
AA
T
ACS
T
AOE
T
CLZ
*
T
OLZ
*
T
CHZ
*
T
OHZ
*
T
OH
70
-
-
-
10
5
-
-
10
5V
MAX.
-
70
70
35
-
-
30
30
-
MIN.
100
-
-
-
15
5
-
-
15
3V
MAX.
-
100
100
50
-
-
35
35
-
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
Write Cycle
PARAMETER
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
CS1
, CS2, WE
SYM.
MIN.
T
WC
T
CW
T
AW
T
AS
T
WP
T
WR
T
DW
T
DH
T
WHZ
*
T
OHZ
*
T
OW
70
50
50
0
50
0
30
0
-
-
5
5V
MAX.
-
-
-
-
-
-
-
-
25
25
-
MIN.
100
70
70
0
70
0
50
0
-
-
10
3V
MAX.
-
-
-
-
-
-
-
-
30
30
-
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
Output Disable to Output in High Z
Output Active from End of Write
∗
These parameters are sampled but not 100% tested
-4-
W24010
TIMING WAVEFORMS
Read Cycle 1
(Address Controlled)
T
RC
Address
T
OH
D
OUT
T
AA
T
OH
Read Cycle 2
(Chip Select Controlled)
CS1
CS2
T
ACS
T
CLZ
D
OUT
T
CHZ
Read Cycle 3
(Output Enable Controlled)
T
RC
Address
T
AA
OE
T
AOE
T
OLZ
CS1
T
OH
CS2
T
ACS
D
OUT
T
CLZ
T
CHZ
T
OHZ
-5-
Publication Release Date: December 1996
Revision A2
查看更多>
参数对比
与W24010S-70LI相近的元器件有：W24010-70LI、W24010U-70LE、W24010V-70LI、W24010Q-70LI、W24010V-70LE、W24010T-70LI、W24010Q-70LE。描述及对比如下：
型号 W24010S-70LI W24010-70LI W24010U-70LE W24010V-70LI W24010Q-70LI W24010V-70LE W24010T-70LI W24010Q-70LE
描述 Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 0.450 INCH, SOP-32 Standard SRAM, 128KX8, 100ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32 Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.4 MM, REVERSE, TSOP1-32 Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32 Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.4 MM, REVERSE, TSOP1-32 Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 SOIC DIP TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1
包装说明 0.450 INCH, SOP-32 0.600 INCH, PLASTIC, DIP-32 8 X 20 MM, REVERSE, TSOP1-32 8 X 13.4 MM, REVERSE, TSOP1-32 8 X 13.40 MM, TSOP1-32 8 X 13.4 MM, REVERSE, TSOP1-32 8 X 20 MM, TSOP1-32 8 X 13.40 MM, TSOP1-32
针数 32 32 32 32 32 32 32 32
Reach Compliance Code not_compliant _compli not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-G32 R-PDIP-T32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
长度 20.45 mm 41.91 mm 18.4 mm 11.8 mm 11.8 mm 11.8 mm 18.4 mm 11.8 mm
内存密度 1048576 bit 1048576 bi 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1
端子数量 32 32 32 32 32 32 32 32
字数 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000 128000 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -20 °C -40 °C -40 °C -20 °C -40 °C -20 °C
组织 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP DIP TSOP1-R TSOP1-R TSOP1 TSOP1-R TSOP1 TSOP1
封装等效代码 SOP32,.56 DIP32,.6 TSSOP32,.8,20 TSSOP32,.56,20 TSSOP32,.56,20 TSSOP32,.56,20 TSSOP32,.8,20 TSSOP32,.56,20
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3/5 V 3/5 V 3/5 V 3/5 V 3/5 V 3/5 V 3/5 V 3/5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 3 mm 5.33 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
最大待机电流 0.000005 A 0.000005 A 0.000005 A 0.000005 A 0.000005 A 0.000005 A 0.000005 A 0.000005 A
最小待机电流 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V
最大压摆率 0.07 mA 0.07 mA 0.07 mA 0.07 mA 0.07 mA 0.07 mA 0.07 mA 0.07 mA
最大供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
最小供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
标称供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
表面贴装 YES NO YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL OTHER INDUSTRIAL INDUSTRIAL OTHER INDUSTRIAL OTHER
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 1.27 mm 2.54 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 11.3 mm 15.24 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm
厂商名称 Winbond(华邦电子) - - Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子)
其他特性 CAN ALSO OPERATE AT 5V SUPPLY CAN ALSO OPERATE AT 5V SUPPLY - - CAN ALSO OPERATE AT 5V SUPPLY - CAN ALSO OPERATE AT 5V SUPPLY CAN ALSO OPERATE AT 5V SUPPLY
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器件捷径:
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