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W24LH8S-70SL

Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, SOP-28

器件类别:存储    存储   

厂商名称:Winbond(华邦电子)

厂商官网:http://www.winbond.com.tw

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器件参数
参数名称
属性值
厂商名称
Winbond(华邦电子)
零件包装代码
SOIC
包装说明
SOP,
针数
28
Reach Compliance Code
unknown
ECCN代码
EAR99
最长访问时间
70 ns
JESD-30 代码
R-PDSO-G28
JESD-609代码
e3
长度
18.11 mm
内存密度
262144 bit
内存集成电路类型
STANDARD SRAM
内存宽度
8
功能数量
1
端子数量
28
字数
32768 words
字数代码
32000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
32KX8
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
认证状态
Not Qualified
座面最大高度
2.85 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
MATTE TIN
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
宽度
8.41 mm
文档预览
Preliminary W24LH8
32K
×
8 CMOS STATIC RAM
GENERAL DESCRIPTION
The W24LH8 is a normal speed, very low power CMOS static RAM organized as 32768
×
8 bits that
operates on a wide voltage range from 2.7V to 3.6V power supply. The W24LH8 family, W24LH8-
70LE and W24LH8-70LI, can meet requirement of various operating temperature. This device is
manufactured using Winbond's high performance CMOS technology.
FEATURES
Low power consumption:
Active: 156 mW (max.)
Standby: 10.8
µW
(max.)
Access time: 70 nS
2.7V to 3.6V supply voltage
Fully static operation
All inputs and outputs directly TTL compatible
Three-state outputs
Battery back-up operation capability
Data retention voltage: 2V (min.)
Packaged in 28-pin 600 mil DIP, 330 mil SOP
and standard type one TSOP (8 mm
×
13.4
mm)
PIN CONFIGURATIONS
BLOCK DIAGRAM
CLK GEN.
A12
A14
R
O
W
D
E
C
O
D
E
R
PRECHARGE CKT.
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28-pin
DIP
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
DD
WE
A13
A8
A9
A11
A2
A3
A4
A5
A6
A7
A13
CORE CELL ARRAY
512 ROWS
64 X 8 COLUMNS
OE
I/O1
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
I/O8
DATA
CNTRL.
CLK
GEN.
I/O CKT.
COLUMN DECODER
WE
CS
OE
A11 A10 A1 A0 A8 A9
PIN DESCRIPTION
OE
A11
A9
A8
A13
WE
V
DD
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
1
0
1
1
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
V
SS
I/O3
I/O2
I/O1
A0
A1
A2
28-pin
TSOP
SYMBOL
A0−A14
I/O1−I/O8
CS
WE
OE
V
DD
V
SS
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Input
Write Enable Input
Output Enable Input
Power Supply
Ground
-1-
Publication Release Date: January 1999
Revision A2
Preliminary W24LH8
TRUTH TABLE
CS
H
L
L
L
OE
X
H
L
X
WE
X
H
H
L
MODE
Not Selected
Output Disable
Read
Write
I/O1−I/O8
High Z
High Z
Data Out
Data In
V
DD
CURRENT
I
SB
, I
SB
1
I
DD
I
DD
I
DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Supply Voltage to V
SS
Potential
Input/Output to V
SS
Potential
Allowable Power Dissipation
Storage Temperature
SL
Operating Temperature
LE
LI
RATING
-0.5 to +4.6
-0.5 to V
DD
+0.5
1.0
-65 to +150
0 to 70
-20 to 85
-40 to 85
UNIT
V
V
W
°C
°C
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(V
DD
= 2.7V−3.6V; V
SS
= 0V; T
A
(°C) = 0 to 70 for SL; -20 to 85 for LE; -40 to 85 for LI)
PARAMETER
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage Current
SYM.
V
IL
V
IH
I
LI
I
LO
TEST CONDITIONS
-
-
V
IN
= V
SS
to V
DD
V
I/O
= V
SS
to V
DD,
CS = V
IH
(min.) or
OE = V
IH
(min.) or
WE = V
IL
(max.)
I
OL
= +2.1 mA
I
OH
= -1.0 mA
MIN.
-0.5
+2.0
-1
-1
MAX.
+0.6
V
DD
+0.5
+1
+1
UNIT
V
V
µA
µA
Output Low Voltage
Output High Voltage
V
OL
V
OH
-
2.2
0.4
-
V
V
-2-
Preliminary W24LH8
Operating Characteristics, continued
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Operating Power Supply
Current
Standby Power Supply
Current
I
DD
I
SB
I
SB1
CS = V
IL
(max.), I/O = 0 mA,
Cycle = min. Duty = 100%
CS = V
IH
(min.), Cycle =
min. Duty = 100%
CS
V
DD
-0.2V
-
-
-
-
-
0.5
40
1
3
mA
mA
µA
Note: Typical parameter is measured under ambient temperature T
A
= 25° C and V
DD
= 5V/ 3V.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25° C, f = 1 MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYM.
C
IN
C
I/O
CONDITIONS
V
IN
= 0V
V
OUT
= 0V
MAX.
6
8
UNIT
pF
pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
0V to 2.4V
5 nS
1.5V
See the drawing below
CONDITIONS
AC Test Loads and Waveform
1 TTL
OUTPUT
100 pF
Including
Jig and
Scope
,
1 TTL
OUTPUT
5 pF
Including
Jig and
Scope
(For T
CLZ,
T
OLZ,
T
CHZ
T
OHZ,
T
WHZ,
T
OW
)
2.4V
0V
5 nS
90%
10%
90%
10%
5 nS
-3-
Publication Release Date: January 1999
Revision A2
Preliminary W24LH8
AC Characteristics, continued
(V
DD
= 2.7V−3.6V; V
SS
= 0V; T
A
(°C) = 0 to 70 for SL; -20 to 85 for LE; -40 to 85 for LI)
Read Cycle
PARAMETER
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Selection to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
These parameters are sampled but not 100% tested
SYMBOL
T
RC
T
AA
T
ACS
T
AOE
T
CLZ
*
T
OLZ
*
T
CHZ
*
T
OHZ
*
T
OH
MIN.
70
-
-
-
10
5
-
-
10
MAX.
-
70
70
35
-
-
30
30
-
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
Write Cycle
PARAMETER
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
Output Disable to Output in High Z
Output Active from End of Write
These parameters are sampled but not 100% tested
CS, WE
SYMBOL
T
WC
T
CW
T
AW
T
AS
T
WP
T
WR
T
DW
T
DH
T
WHZ
*
T
OHZ
*
T
OW
MIN.
70
50
50
0
50
0
40
0
-
-
5
MAX.
-
-
-
-
-
-
-
-
25
25
-
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
-4-
Preliminary W24LH8
TIMING WAVEFORMS
Read Cycle 1
(Address Controlled)
T
RC
Address
T
OH
D
OUT
T
AA
T
OH
Read Cycle 2
(Chip Select Controlled)
CS
T
ACS
T
CLZ
D
OUT
T
CHZ
Read Cycle 3
(Output Enable Controlled)
T
RC
Address
T
AA
OE
T
AOE
T
OLZ
CS
T
ACS
D
OUT
T
CLZ
T
CHZ
T
OHZ
T
OH
-5-
Publication Release Date: January 1999
Revision A2
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参数对比
与W24LH8S-70SL相近的元器件有:W24LH8Q-70LE、W24LH8Q-70SL、W24LH8Q-70LI、W24LH8S-70LE、W24LH8S-70LI、W24LH8-70SL、W24LH8-70LI、W24LH8-70LE。描述及对比如下:
型号 W24LH8S-70SL W24LH8Q-70LE W24LH8Q-70SL W24LH8Q-70LI W24LH8S-70LE W24LH8S-70LI W24LH8-70SL W24LH8-70LI W24LH8-70LE
描述 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, SOP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, SOP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, SOP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 Standard SRAM, 32KX8, 70ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
厂商名称 Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子) Winbond(华邦电子)
零件包装代码 SOIC TSOP TSOP TSOP SOIC SOIC DIP DIP DIP
包装说明 SOP, TSOP1, TSOP1, TSOP1, SOP, SOP, DIP, DIP, DIP,
针数 28 28 28 28 28 28 28 28 28
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns
JESD-30 代码 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDIP-T28 R-PDIP-T28 R-PDIP-T28
长度 18.11 mm 11.8 mm 11.8 mm 11.8 mm 18.11 mm 18.11 mm 37.08 mm 37.08 mm 37.08 mm
内存密度 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1 1
端子数量 28 28 28 28 28 28 28 28 28
字数 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words
字数代码 32000 32000 32000 32000 32000 32000 32000 32000 32000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 85 °C 70 °C 85 °C 85 °C 85 °C 70 °C 85 °C 85 °C
最低工作温度 - -20 °C - -40 °C -20 °C -40 °C - -40 °C -20 °C
组织 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP TSOP1 TSOP1 TSOP1 SOP SOP DIP DIP DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 2.85 mm 1.2 mm 1.2 mm 1.2 mm 2.85 mm 2.85 mm 5.33 mm 5.33 mm 5.33 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
标称供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
表面贴装 YES YES YES YES YES YES NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL OTHER COMMERCIAL INDUSTRIAL OTHER INDUSTRIAL COMMERCIAL INDUSTRIAL OTHER
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子节距 1.27 mm 0.55 mm 0.55 mm 0.55 mm 1.27 mm 1.27 mm 2.54 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
宽度 8.41 mm 8 mm 8 mm 8 mm 8.41 mm 8.41 mm 15.24 mm 15.24 mm 15.24 mm
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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