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W72M64VK100BC

2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package

器件类别：存储    存储   

厂商名称：White Electronic Designs Corporation

厂商官网：http://www.wedc.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
White Electronic Designs Corporation
Objectid
2112948879
包装说明
13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
Reach Compliance Code
unknow
compound_id
294360795
最长访问时间
100 ns
备用内存宽度
32
启动块
BOTTOM
命令用户界面
NO
数据轮询
YES
JESD-30 代码
R-PBGA-B159
内存密度
134217728 bi
内存集成电路类型
FLASH MODULE
内存宽度
64
功能数量
1
部门数/规模
8,64
端子数量
159
字数
2097152 words
字数代码
2000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
2MX64
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装等效代码
BGA159,10X16,50
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
3.3 V
编程电压
3.3 V
认证状态
Not Qualified
就绪/忙碌
YES
座面最大高度
2.2 mm
部门规模
4K,32K
最大待机电流
0.0004 A
最大压摆率
0.18 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
BALL
端子节距
1.27 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
切换位
YES
类型
NOR TYPE
写保护
HARDWARE
文档预览
White Electronic Designs
W72M64VK-XBX
2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package
FEATURES
Access Times of 90, 100, 120ns
Packaging
• 159 PBGA, 13x22mm - 1.27mm pitch
1,000,000 Erase/Program Cycles
Sector Architecture
• Bank 1 (4Mb): eight 4K word, eight 32K word
• Bank 2 (12Mb): twenty-four 32K word
• Bank 3 (12Mb): twenty-four 32K word
• Bank 4 (4Mb): eight 32K word
Bottom boot block
Zero Power Operation
Organized as 2Mx64 or 2x2Mx32
Commercial, Industrial and Military Temperature
Ranges
3.3 Volt for Read and Write Operations
Simultaneous Read/Write Operation:
• Data can be continuously read from one bank
while executing erase/program functions in
another bank
• Zero latency between read and write operations
Erase Suspend/Resume
• Suspends erase operations to allow programming
in same bank
Data# Polling and Toggle Bits
• Provides a software method of detecting the
status of program or erase cycles
This product is subject to change without notice.
Note: For programming information refer to Flash Programming
W72M64V-XBX Application Note.
Unlock Bypass Program command
• Reduces overall programming time when issuing
multiple program command sequences
Ready/Busy# output (RY/BY#)
• Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
• Hardware method of resetting the internal state
machine to the read mode
WP#/A
CC
input pin
• Write protect (WP#) function allows protection
two outermost boot sectors, regardless of sector
protect status
• Acceleration (A
CC
) function accelerates program
timing
Sector Protection
• Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within
that sector
• Temporary Sector Unprotect allows changing
data in protected sectors in-system
April 2005
Rev. 0
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W72M64VK-XBX
FIGURE 1: PIN CONFIGURATION FOR W72M64V-XBX
Top View
Pin Description
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
V
CC
2
GND
3
GND
4
GND
5
V
CC
6
V
CC
7
GND
8
GND
9 10
GND
V
CC
GND
DQ41
WE3#
V
CC
DQ57
DNU
WE4#
V
CC
V
CC
V
CC
DQ33
DQ43
DQ45
DQ47
DQ49
DQ59
DQ61
DQ63
V
CC
V
CC
DQ40
DQ35
DQ37
DQ39
DQ56
DQ51
DQ53
DQ55
V
CC
DQ0-63
A0-20
WE1-4#
CS1-4#
OE#
RESET#
WP#/ACC
RY/BY#
V
CC
GND
DNU
V
CC
DQ32
DQ42
DQ44
DQ46
DQ48
DQ58
DQ60
DQ62
V
CC
GND
CS3#
DQ34
DQ36
DQ38
CS4#
DQ50
DQ52
DQ54
GND
GND
OE#
A0
DNU*
V
CC
A12
A16
DNU*
A20
GND
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Hardware Reset
Hardware Write
Protect/Acceleration
Ready/Busy Output
Power Supply
Ground
Do Not Use
GND
A2
WP#/A
CC
A11
GND
V
CC
A7
A10
A15
GND*
GND
A3
A6
A9
V
CC
GND
A1
RESET#
A13
GND
GND
A4
A17
RY/BY#
GND
A14
A5
A18
A8
GND
GND
DQ17
WE2#
DQ29
DNU
DQ9
DQ4
WE1#
A19
GND
V
CC
DQ24
DQ19
DQ21
DQ31
DQ1
DQ11
DQ6
DQ15
V
CC
V
CC
DQ16
DQ26
DQ28
DQ23
DQ8
DQ3
DQ13
DQ7
V
CC
V
CC
CS2#
DQ18
DQ20
DQ30
DQ0
DQ10
DQ5
DQ14
V
CC
V
CC
V
CC
DQ25
DQ27
DQ22
CS1#
DQ2
DQ12
GND
V
CC
V
CC
GND
GND
GND
V
CC
V
CC
GND
GND
GND
V
CC
* Ball G8 is reserved for A
21
and ball G4 is reserved for A
22
on
W78M64V-XSBX.
WE
1
#
Block Diagram
WE
2
#
CS
2
#
WE
3
#
CS
3
#
WE
4
#
CS
4
#
CS
1
#
RY/BY#
RESET#
OE#
A
0-20
2M x 16
2M x 16
2M x 16
2M x 16
V
CC
BYTE#
BYTE#
BYTE#
BYTE#
WP#/ACC
DQ
0-15
DQ
16-31
DQ
32-47
DQ
48-63
April 2005
Rev. 0
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Supply Voltage Range (V
CC
)
Signal Voltage Range
Storage Temperature Range
Endurance (write/erase cycles)
-55 to +125
-0.5 to +4.0
-0.5 to Vcc +0.5
-55 to +150
1,000,000 min.
Unit
°C
V
V
°C
cycles
W72M64VK-XBX
CAPACITANCE
T
A
= +25°C, F = 1.0MHz
Parameter
WE1-4# capacitance
CS1-4# capacitance
Data I/O capacitance
Address input capacitance
RESET# capacitance
RY/BY# capacitance
OE# capacitance
Symbol
C
WE
C
CS
C
I/O
C
AD
C
RS
C
RB
C
OE
Max
8
8
10
30
26
26
32
Unit
pF
pF
pF
pF
pF
pF
pF
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
Symbol
V
CC
T
A
T
A
Min
3.0
-55
-40
Max
3.6
+125
+85
Unit
V
°C
°C
Parameter
Pattern Data
Retention Time
DATA RETENTION
Test Conditions
150°C
125°C
Min
10
20
Unit
Years
Years
DC CHARACTERISTICS – CMOS COMPATIBLE
V
CC
= 3.3V ± 0.3V, -55°C ≤ T
A
≤ +125°C
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program or Erase (2,3)
V
CC
Standby Current (2)
Automatic Sleep Mode (2,4,5)
V
CC
Active Read-While-Program Current (1,2)
V
CC
Active Program-While-Erase Current (1,2)
V
CC
Active Program-While-Erase-Suspended Current (2,5)
A
CC
Accelerated Program Current
Input Low Voltage
Input High Voltage
Voltage for WP#/A
CC
Sector
Protect/Unprotect and Program Acceleration
Voltage for Autoselect and Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage (5)
Symbol
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
I
CC8
I
ACC
V
IL
V
IH
V
HH
V
ID
V
OL
V
OH1
V
LKO
Conditions
V
CC
= 3.6V, V
IN
= GND to V
CC
V
CC
= 3.6V, V
OUT
= GND to V
CC
CS# = V
IL
#, OE = V
IH
, f = 5MHz
CS# = V
IL
#, OE = V
IH
, WE# = V
IL
CS# = RESET# = V
CC
± 0.3V
V
IH
= V
CC
± 0.3V;
V
IL
= V
SS
± 0.3V
CS# = V
IL
#, OE = V
IH
CS# = V
IL
#, OE = V
IH
CS# = V
IL
#, OE = V
IH
CS# = V
IL
#, OE = V
IH
ACC Pin
VCC Pin
V
CC
= min
V
CC
= 3.0V + 0.3V
V
CC
= 3.0V + 0.3V
I
OL
= 4.0 mA, V
CC
= 3.0V
I
OH
= -2.0 mA, V
CC
= 3.0V
Min
-10
-10
Max
10
10
65
120
400
400
180
180
140
40
120
0.8
V
CC
+ 0.3
9.5
12.5
0.45
2.5
Unit
µA
µA
mA
mA
µA
µA
mA
mA
mA
mA
V
V
V
V
V
V
V
-0.5
2.1
8.5
8.5
2.55
2.3
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 8 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CC
MAX
3. I
CC
active while Embedded Algorithm (program or erase) is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30ns.
5. Not tested.
April 2005
Rev. 0
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
V
CC
= 3.3V ± 0.3V, -55°C ≤ T
A
≤ +125°C
Parameter
Write Cycle Time (3)
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Pulse Width High (3)
Duration of Word Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time Before Write (3)
Chip Programming Time (4)
Symbol
t
AVAV
t
WLEL
t
ELEH
t
AVWL
t
DVEH
t
EHDX
t
ELAX
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
CPH
Min
90
0
35
0
45
0
45
30
-90
Max
Min
100
0
45
0
45
0
45
30
-100
Max
W72M64VK-XBX
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – CS# CONTROLLED
-120
Min
120
0
50
0
50
0
50
30
Max
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
sec
Unit
300
5
0
42
0
300
5
0
42
300
5
42
NOTES:
1. Typical value for t
WHWH1
is 7µs.
2. Typical value for t
WHWH2
is 0.4 sec.
3. Guaranteed by design, but not tested.
4. Typical value is 36 sec. The typical chip programming time is considerably less than the maximum chip
programming time listed, since most bytes program faster than the maximum program times listed.
FIGURE 2
AC Test Circuit
I
OL
Current Source
AC Test Conditions
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
V
Z
» 1.5V
(Bipolar Supply)
Typ
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
Unit
V
ns
V
V
D.U.T.
C
EFF
= 50 pf
Current Source
I
OH
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75W.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
April 2005
Rev. 0
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
V
CC
= 3.3V ± 0.3V, -55°C ≤ T
A
≤ +125°C
Parameter
Write Cycle Time (3)
Chip Select Setup Time (3)
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Pulse Width High (3)
Duration of Byte Programming Operation (1)
Sector Erase (2)
Read Recovery Time before Write (3)
VCC Setup Time
Chip Programming Time (4)
Address Setup Time to OE# low during toggle
bit polling
Write Recovery Time from RY/BY# (3)
Program/Erase Valid to RY/BY#
Symbol
t
AVAV
t
ELWL
t
WLWH
t
AVWL
t
DVWH
t
WHDX
t
WLAX
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
VCS
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
WPH
Min
90
0
35
0
45
0
45
30
-90
Max
Min
100
0
50
0
50
0
50
30
-100
Max
W72M64VK-XBX
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – WE# CONTROLLED
-120
Min
120
0
50
0
50
0
50
30
Max
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
µs
sec
ns
ns
ns
Unit
300
5
0
50
42
t
ASO
t
RB
t
BUSY
15
0
90
15
0
90
0
50
300
5
0
50
42
15
0
90
300
5
42
NOTES:
1. Typical value for t
WHWH1
is 7µs.
2. Typical value for t
WHWH2
is 0.4 sec.
3. Guaranteed by design, but not tested.
4. Typical value is 36 sec. The typical chip programming time is considerably less than the maximum chip
programming time listed, since most bytes program faster than the maximum program times listed.
AC CHARACTERISTICS – READ-ONLY OPERATIONS
V
CC
= 3.3V ± 0.3V, -55°C ≤ T
A
≤ +125°C
Parameter
Read Cycle Time (1)
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select High to Output High Z
Output Enable High to Output High Z
Output Hold from Addresses, CS# or OE#
Change, Whichever occurs first
Output Enable Hold Time (1)
Read
Toggle and
Data# Polling
1.
Guaranteed by design, not tested.
Symbol
Min
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
t
OEH
0
0
10
90
-90
Max
90
90
40
20
20
0
0
10
Min
100
-100
Max
100
100
40
20
20
0
0
10
Min
120
-120
Max
Unit
ns
120
120
50
20
20
ns
ns
ns
ns
ns
ns
April 2005
Rev. 0
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
查看更多>
参数对比
与W72M64VK100BC相近的元器件有：W72M64VK120BM、W72M64VK-XBX、W72M64VK100BM、W72M64VK90BM、W72M64VK90BI、W72M64VK90BC、W72M64VK120BI、W72M64VK120BC、W72M64VK100BI。描述及对比如下：
型号 W72M64VK100BC W72M64VK120BM W72M64VK-XBX W72M64VK100BM W72M64VK90BM W72M64VK90BI W72M64VK90BC W72M64VK120BI W72M64VK120BC W72M64VK100BI
描述 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package
是否Rohs认证 不符合 不符合 - 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 White Electronic Designs Corporation White Electronic Designs Corporation - White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation
包装说明 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159 - 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159
Reach Compliance Code unknow unknow - unknow unknow unknow unknow unknow unknow unknow
最长访问时间 100 ns 120 ns - 100 ns 90 ns 90 ns 90 ns 120 ns 120 ns 100 ns
备用内存宽度 32 32 - 32 32 32 32 32 32 32
启动块 BOTTOM BOTTOM - BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
命令用户界面 NO NO - NO NO NO NO NO NO NO
数据轮询 YES YES - YES YES YES YES YES YES YES
JESD-30 代码 R-PBGA-B159 R-PBGA-B159 - R-PBGA-B159 R-PBGA-B159 R-PBGA-B159 R-PBGA-B159 R-PBGA-B159 R-PBGA-B159 R-PBGA-B159
内存密度 134217728 bi 134217728 bi - 134217728 bi 134217728 bi 134217728 bi 134217728 bi 134217728 bi 134217728 bi 134217728 bi
内存集成电路类型 FLASH MODULE FLASH MODULE - FLASH MODULE FLASH MODULE FLASH MODULE FLASH MODULE FLASH MODULE FLASH MODULE FLASH MODULE
内存宽度 64 64 - 64 64 64 64 64 64 64
功能数量 1 1 - 1 1 1 1 1 1 1
部门数/规模 8,64 8,64 - 8,64 8,64 8,64 8,64 8,64 8,64 8,64
端子数量 159 159 - 159 159 159 159 159 159 159
字数 2097152 words 2097152 words - 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
字数代码 2000000 2000000 - 2000000 2000000 2000000 2000000 2000000 2000000 2000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 125 °C - 125 °C 125 °C 85 °C 70 °C 85 °C 70 °C 85 °C
最低工作温度 - -55 °C - -55 °C -55 °C -40 °C - -40 °C - -40 °C
组织 2MX64 2MX64 - 2MX64 2MX64 2MX64 2MX64 2MX64 2MX64 2MX64
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 BGA BGA - BGA BGA BGA BGA BGA BGA BGA
封装等效代码 BGA159,10X16,50 BGA159,10X16,50 - BGA159,10X16,50 BGA159,10X16,50 BGA159,10X16,50 BGA159,10X16,50 BGA159,10X16,50 BGA159,10X16,50 BGA159,10X16,50
封装形状 RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY GRID ARRAY - GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
编程电压 3.3 V 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
就绪/忙碌 YES YES - YES YES YES YES YES YES YES
座面最大高度 2.2 mm 2.2 mm - 2.2 mm 2.2 mm 2.2 mm 2.2 mm 2.2 mm 2.2 mm 2.2 mm
部门规模 4K,32K 4K,32K - 4K,32K 4K,32K 4K,32K 4K,32K 4K,32K 4K,32K 4K,32K
最大待机电流 0.0004 A 0.0004 A - 0.0004 A 0.0004 A 0.0004 A 0.0004 A 0.0004 A 0.0004 A 0.0004 A
最大压摆率 0.18 mA 0.18 mA - 0.18 mA 0.18 mA 0.18 mA 0.18 mA 0.18 mA 0.18 mA 0.18 mA
最大供电电压 (Vsup) 3.6 V 3.6 V - 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V - 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES - YES YES YES YES YES YES YES
技术 CMOS CMOS - CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL MILITARY - MILITARY MILITARY INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
端子形式 BALL BALL - BALL BALL BALL BALL BALL BALL BALL
端子节距 1.27 mm 1.27 mm - 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 BOTTOM BOTTOM - BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
切换位 YES YES - YES YES YES YES YES YES YES
类型 NOR TYPE NOR TYPE - NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
写保护 HARDWARE HARDWARE - HARDWARE HARDWARE HARDWARE HARDWARE HARDWARE HARDWARE HARDWARE
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