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W9816G6JH-5

512K X 2 BANKS X 16 BITS SDRAM

厂商名称：Winbond(华邦电子)

厂商官网：http://www.winbond.com.tw

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W9816G6JH
512K
2 BANKS
16 BITS SDRAM
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
GENERAL DESCRIPTION ......................................................................................................... 3
FEATURES ................................................................................................................................. 3
ORDER INFORMATION ............................................................................................................. 4
PIN CONFIGURATION ............................................................................................................... 4
PIN DESCRIPTION..................................................................................................................... 5
BLOCK DIAGRAM ...................................................................................................................... 6
FUNCTIONAL DESCRIPTION.................................................................................................... 7
7.1
Power Up and Initialization ............................................................................................. 7
7.2
Programming Mode Register .......................................................................................... 7
7.3
Bank Activate Command ................................................................................................ 7
7.4
Read and Write Access Modes ...................................................................................... 7
7.5
Burst Read Command .................................................................................................... 8
7.6
Burst Write Command .................................................................................................... 8
7.7
Read Interrupted by a Read ........................................................................................... 8
7.8
Read Interrupted by a Write ............................................................................................ 8
7.9
Write Interrupted by a Write ............................................................................................ 8
7.10 Write Interrupted by a Read ............................................................................................ 8
7.11 Burst Stop Command ..................................................................................................... 9
7.12 Addressing Sequence of Sequential Mode .................................................................... 9
7.13 Addressing Sequence of Interleave Mode ...................................................................... 9
7.14 Auto-precharge Command ........................................................................................... 10
7.15 Precharge Command .................................................................................................... 10
7.16 Self Refresh Command ................................................................................................ 10
7.17 Power Down Mode ....................................................................................................... 11
7.18 No Operation Command ............................................................................................... 11
7.19 Deselect Command ...................................................................................................... 11
7.20 Clock Suspend Mode .................................................................................................... 11
OPERATION MODE ................................................................................................................. 12
ELECTRICAL CHARACTERISTICS ......................................................................................... 13
9.1
Absolute Maximum Ratings .......................................................................................... 13
9.2
Recommended DC Operating Conditions .................................................................... 13
9.3
Capacitance .................................................................................................................. 13
9.4
DC Characteristics ........................................................................................................ 14
9.5
AC Characteristics ........................................................................................................ 15
TIMING WAVEFORMS ............................................................................................................. 17
10.1 Command Input Timing ................................................................................................ 17
10.2 Read Timing.................................................................................................................. 18
10.3 Control Timing of Input/Output Data ............................................................................. 19
10.4 Mode Register Set Cycle .............................................................................................. 20
Publication Release Date: Dec. 27, 2016
Revision: A02
-1-
8.
9.
10.
W9816G6JH
11.
OPERATING TIMING EXAMPLE ............................................................................................. 21
11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) ...................................... 21
11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge) ........... 22
11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) ...................................... 23
11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge) ........... 24
11.5 Interleaved Bank Write (Burst Length = 8) ................................................................... 25
11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 26
11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3) .............................................. 27
11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) ................................... 28
11.9 Auto Precharge Read (Burst Length = 4, CAS Latency = 3) ........................................ 29
11.10 Auto Precharge Write (Burst Length = 4) .................................................................... 30
11.11 Auto Refresh Cycle ..................................................................................................... 31
11.12 Self Refresh Cycle ....................................................................................................... 32
11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)............................ 33
11.14 Power Down Mode ...................................................................................................... 34
11.15 Auto-precharge Timing (Read Cycle) .......................................................................... 35
11.16 Auto-precharge Timing (Write Cycle) .......................................................................... 36
11.17 Timing Chart of Read to Write Cycle ........................................................................... 37
11.18 Timing Chart of Write to Read Cycle ........................................................................... 37
11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command) .......................................... 38
11.20 Timing Chart of Burst Stop Cycle (Precharge Command) .......................................... 38
11.21 CKE/DQM Input Timing (Write Cycle) ......................................................................... 39
11.22 CKE/DQM Input Timing (Read Cycle) ......................................................................... 40
PACKAGE SPECIFICATION .................................................................................................... 41
REVISION HISTORY ................................................................................................................ 42
12.
13.
Publication Release Date: Dec. 27, 2016
Revision: A02
-2-
W9816G6JH
1. GENERAL DESCRIPTION
W9816G6JH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
512K words
2 banks
16 bits. W9816G6JH delivers a data bandwidth of up to 200M words per
second. To fully comply with the personal computer industrial standard, W9816G6JH is sorted into the
following speed grades: -5, -6, -6I, -7 and -7I.
The -5 grade parts can run up to 200MHz/CL3.
The -6 and -6I grade parts can run up to 166MHz/CL3 (the -6I industrial grade parts which is
guaranteed to support -40°C ≤ T
A
≤ 85°C).
The -7 and -7I grade parts can run up to 143MHz/CL3 (the -7I industrial grade parts which is
guaranteed to support -40°C ≤ T
A
≤ 85°C).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9816G6JH is ideal for main memory in
high performance applications.
2. FEATURES
3.3V ± 0.3V power supply for -5/-6/-6I speed grades
2.7V~3.6V power supply for -7/-7I speed grades
Up to 200 MHz Clock Frequency
524,288 words x 2 banks x 16 bits organization
Self Refresh current: standard and low power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and Full Page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Auto-precharge and Controlled Precharge
2K Refresh Cycles/32 mS
Interface: LVTTL
Packaged in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant
Publication Release Date: Dec. 27, 2016
Revision: A02
-3-
W9816G6JH
3. ORDER INFORMATION
PART NUMBER
W9816G6JH-5
W9816G6JH-6
W9816G6JH-6I
W9816G6JH-7
W9816G6JH-7I
SPEED GRADE
200MHz/CL3
166MHz/CL3
166MHz/CL3
143MHz/CL3
143MHz/CL3
SELF REFRESH CURRENT
(MAX)
2mA
2mA
2mA
2mA
2mA
OPERATING
TEMPERATURE
0°C ~ 70°C
0°C ~ 70°C
-40°C ~ 85°C
0°C ~ 70°C
-40°C ~ 85°C
4. PIN CONFIGURATION
VDD
DQ0
DQ1
VSSQ
DQ2
DQ3
VDDQ
DQ4
DQ5
VSSQ
DQ6
DQ7
VDDQ
LDQM
WE
CAS
RAS
CS
BA
A10
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
VSS
DQ15
DQ14
VSSQ
DQ13
DQ12
VDDQ
DQ11
DQ10
VSSQ
DQ9
DQ8
VDDQ
NC
UDQM
CLK
CKE
NC
A9
A8
A7
A6
A5
A4
VSS
Publication Release Date: Dec. 27, 2016
Revision: A02
-4-
W9816G6JH
5. PIN DESCRIPTION
PIN NUMBER
PIN NAME
FUNCTION
DESCRIPTION
21, 22, 23, 24,
27, 28, 29, 30,
31, 32, 20
19
A0A10
Address
Multiplexed pins for row and column address.
Row address: A0A10. Column address: A0A7.
Select bank to activate during row address latch time,
or bank to read/write during column address latch
time.
Multiplexed pins for data input and output.
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
Command input. When sampled at the rising edge of
the clock,
RAS
,
CAS
and
WE
define the operation
to be executed.
BA
Bank Select
2, 3, 5, 6, 8, 9,
11, 12, 39, 40,
DQ0DQ15
42, 43, 45, 46,
48, 49
18
CS
Data
Input/ Output
Chip Select
17
RAS
Row Address
Strobe
16
15
CAS
WE
Column
Address Strobe Referred to
RAS
Write Enable
Input/Output
Mask
Clock Inputs
Clock Enable
Power
Ground
Power for I/O
buffer
Referred to
RAS
The output buffer is placed at Hi-Z (with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write
operation with zero latency.
System clock used to sample inputs on the rising
edge of clock.
CKE controls the clock activation and deactivation.
When CKE is low, Power Down mode, Suspend
mode, or Self Refresh mode is entered.
Power for input buffers and logic circuit inside DRAM.
Ground for input buffers and logic circuit inside
DRAM.
Separated power from V
DD
, used for output buffers to
improve noise immunity.
36, 14
UDQM/
LDQM
CLK
CKE
V
DD
V
SS
V
DDQ
V
SSQ
NC
35
34
1, 25
26, 50
7, 13, 38, 44,
4, 10, 41, 47
33, 37
Ground for I/O Separated ground from V
SS
, used for output buffers
buffer
to improve noise immunity.
No Connection No connection.
Publication Release Date: Dec. 27, 2016
Revision: A02
-5-
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参数对比
与W9816G6JH-5相近的元器件有：W9816G6JH、W9816G6JH-6、W9816G6JH-6I、W9816G6JH-7I、W9816G6JH-7。描述及对比如下：
型号 W9816G6JH-5 W9816G6JH W9816G6JH-6 W9816G6JH-6I W9816G6JH-7I W9816G6JH-7
描述 512K X 2 BANKS X 16 BITS SDRAM 512K X 2 BANKS X 16 BITS SDRAM 512K X 2 BANKS X 16 BITS SDRAM 512K X 2 BANKS X 16 BITS SDRAM 512K X 2 BANKS X 16 BITS SDRAM 512K X 2 BANKS X 16 BITS SDRAM
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器件捷径:
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