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W9864G2GH-6I

512K X 4 BANKS X 32BITS SDRAM

器件类别:存储    存储   

厂商名称:Winbond(华邦电子)

厂商官网:http://www.winbond.com.tw

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Winbond(华邦电子)
零件包装代码
TSOP2
包装说明
TSSOP, TSSOP86,.46,20
针数
86
Reach Compliance Code
unknow
ECCN代码
EAR99
访问模式
FOUR BANK PAGE BURST
最长访问时间
5 ns
其他特性
AUTO/SELF REFRESH
最大时钟频率 (fCLK)
166 MHz
I/O 类型
COMMON
交错的突发长度
1,2,4,8
JESD-30 代码
R-PDSO-G86
长度
22.22 mm
内存密度
67108864 bi
内存集成电路类型
DDR DRAM
内存宽度
32
功能数量
1
端口数量
1
端子数量
86
字数
2097152 words
字数代码
2000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
2MX32
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装等效代码
TSSOP86,.46,20
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源
3.3 V
认证状态
Not Qualified
刷新周期
4096
座面最大高度
1.2 mm
自我刷新
YES
连续突发长度
1,2,4,8,FP
最大待机电流
0.003 A
最大压摆率
0.14 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
GULL WING
端子节距
0.5 mm
端子位置
DUAL
宽度
10.16 mm
文档预览
W9864G2GH
512K X 4 BANKS X 32BITS SDRAM
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
GENERAL DESCRIPTION ......................................................................................................... 3
FEATURES ................................................................................................................................. 3
AVAILABLE PART NUMBER...................................................................................................... 4
PIN CONFIGURATION ............................................................................................................... 5
PIN DESCRIPTION..................................................................................................................... 6
BLOCK DIAGRAM ...................................................................................................................... 7
FUNCTIONAL DESCRIPTION.................................................................................................... 8
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
7.13
7.14
7.15
7.16
7.17
7.18
7.19
7.20
8.
9.
8.1
9.1
Power Up and Initialization ............................................................................................. 8
Programming Mode Register.......................................................................................... 8
Bank Activate Command ................................................................................................ 8
Read and Write Access Modes ...................................................................................... 8
Burst Read Command .................................................................................................... 9
Burst Command .............................................................................................................. 9
Read Interrupted by a Read ........................................................................................... 9
Read Interrupted by a Write............................................................................................ 9
Write Interrupted by a Write............................................................................................ 9
Write Interrupted by a Read............................................................................................ 9
Burst Stop Command ................................................................................................... 10
Addressing Sequence of Sequential Mode .................................................................. 10
Addressing Sequence of Interleave Mode.................................................................... 10
Auto-precharge Command ........................................................................................... 11
Precharge Command.................................................................................................... 11
Self Refresh Command ................................................................................................ 11
Power Down Mode ....................................................................................................... 12
No Operation Command............................................................................................... 12
Deselect Command ...................................................................................................... 12
Clock Suspend Mode.................................................................................................... 12
Simplified Stated Diagram ............................................................................................ 14
Absolute Maximum Ratings .......................................................................................... 15
OPERATION MODE ................................................................................................................. 13
ELECTRICAL CHARACTERISTICS......................................................................................... 15
-1-
Publication Release Date:Aug. 13, 2007
Revision A09
W9864G2GH
9.2
9.3
9.4
9.5
10.
10.1
10.2
10.3
10.4
10.5
11.
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
11.10
11.11
11.12
11.13
11.14
11.15
11.16
11.17
11.18
11.19
11.20
11.21
11.22
12.
13.
12.1
Recommended DC Operating Conditions .................................................................... 15
Capacitance .................................................................................................................. 16
DC Characteristics ........................................................................................................ 16
AC Characteristics and Operating Condition................................................................ 17
Command Input Timing ................................................................................................ 20
Read Timing.................................................................................................................. 21
Control Timing of Input Data......................................................................................... 22
Control Timing of Output Data ...................................................................................... 23
Mode Register Set Cycle .............................................................................................. 24
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)...................................... 25
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)........... 26
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)...................................... 27
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge)........... 28
Interleaved Bank Write (Burst Length = 8) ................................................................... 29
Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 30
Page Mode Read (Burst Length = 4, CAS Latency = 3)............................................... 31
Page Mode Read/Write (Burst Length = 8, CAS Latency = 3) ..................................... 32
Auto-precharge Read (Burst Length = 4, CAS Latency = 3) ........................................ 33
Auto-precharge Write (Burst Length = 4) .................................................................... 34
Auto Refresh Cycle ..................................................................................................... 35
Self Refresh Cycle....................................................................................................... 36
Bust Read and Single Write (Burst Length = 4, CAS Latency = 3)............................. 37
Power Down Mode ...................................................................................................... 38
Auto-precharge Timing (Write Cycle).......................................................................... 39
Auto-precharge Timing (Read Cycle).......................................................................... 40
Timing Chart of Read to Write Cycle........................................................................... 41
Timing Chart of Write to Read Cycle........................................................................... 41
Timing Chart of Burst Stop Cycle (Burst Stop Command).......................................... 42
Timing Chart of Burst Stop Cycle (Precharge Command) .......................................... 42
CKE/DQM Input Timing (Write Cycle) ......................................................................... 43
CKE/DQM Input Timing (Read Cycle)......................................................................... 44
86L TSOP (II)-400 mil................................................................................................... 45
TIMING WAVEFORMS ............................................................................................................. 20
OPERATING TIMING EXAMPLE ............................................................................................. 25
PACKAGE SPECIFICATION .................................................................................................... 45
REVISION HISTORY ................................................................................................................ 46
Publication Release Date:Aug. 13, 2007
Revision A09
-2-
W9864G2GH
512K X 4 BANKS X 32BITS SDRAM
1. GENERAL DESCRIPTION
W9864G2GH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
512K words
×
4 banks
×
32 bits. Using pipelined architecture and 0.11 µm process technology,
W9864G2GH delivers a data bandwidth of up to 800M bytes per second. For different application,
W9864G2GH is sorted into the following speed grades:-5,-6/-6C/-6I,-7.The -5 parts can run up to
200MHz/CL3.The -6/-6C/-6I parts can run up to 166 MHz/CL3. And the grade of –6C with t
CK
=7.5nS
on CL=2, t
IH
=0.8nS on CL=2/3.And the -6I grade which is guaranteed to support -40°C ~ 85°C.The -7
parts can run up to 143 MHz/CL3.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9864G2GH is ideal for main memory in
high performance applications.
2. FEATURES
3.3V± 0.3V for -5/-6/-6C/-6I grade power supply
2.7V
½
3.6V for -7 grade power supply
524,288 words
×
4 banks
×
32 bits organization
Self Refresh Current: Standard and Low Power
CAS Latency: 2 & 3
Burst Length: 1, 2, 4, 8 and full page
Sequential and Interleave Burst
Byte data controlled by DQM0-3
Auto-precharge and controlled precharge
Burst read, single write operation
4K refresh cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 86-pin, 400 mil
W9864G2GH is using Lead free materials
-3-
Publication Release Date:Aug. 13, 2007
Revision A09
W9864G2GH
3. AVAILABLE PART NUMBER
PART NUMBER
SPEED (CL=3)
SELF REFRESH
CURRENT (MAX.)
OPERATING
TEMPERATURE
W9864G2GH-5
W9864G2GH-6/-6C
W9864G2GH-6I
W9864G2GH-7
200 MHz
166 MHz
166 MHz
143 MHz
2mA
2mA
2mA
2mA
0°C ~ 70°C
0°C ~ 70°C
-40°C ~ 85°C
0°C ~ 70°C
-4-
Publication Release Date:Aug. 13, 2007
Revision A09
W9864G2GH
4. PIN CONFIGURATION
VCC
DQ0
V
CC
Q
DQ1
DQ2
V
SS
Q
DQ3
DQ4
V
CC
Q
DQ5
DQ6
VSSQ
DQ7
NC
VCC
DQM0
WE
CAS
RAS
CS
NC
BS0
BS1
A10/AP
A0
A1
A2
DQM2
V
CC
NC
DQ16
V
SS
Q
DQ17
DQ18
V
CC
Q
DQ19
DQ20
V
SS
Q
DQ21
DQ22
V
CC
Q
DQ23
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
V
ss
DQ15
V
SS
Q
DQ14
DQ13
V
CC
Q
DQ12
DQ11
V
SS
Q
DQ10
DQ9
V
CC
Q
DQ8
NC
V
SS
DQM1
NC
NC
CLK
CKE
A9
A8
A7
A6
A5
A4
A3
DQM3
V
SS
NC
DQ31
V
CC
Q
DQ30
DQ29
V
SS
Q
DQ28
DQ27
V
CC
Q
DQ26
DQ25
V
SS
Q
DQ24
V
SS
-5-
Publication Release Date:Aug. 13, 2007
Revision A09
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参数对比
与W9864G2GH-6I相近的元器件有:W9864G2GH、W9864G2GH-5、W9864G2GH-6C、W9864G2GH-6、W9864G2GH-7。描述及对比如下:
型号 W9864G2GH-6I W9864G2GH W9864G2GH-5 W9864G2GH-6C W9864G2GH-6 W9864G2GH-7
描述 512K X 4 BANKS X 32BITS SDRAM 512K X 4 BANKS X 32BITS SDRAM 512K X 4 BANKS X 32BITS SDRAM 512K X 4 BANKS X 32BITS SDRAM 512K X 4 BANKS X 32BITS SDRAM 512K X 4 BANKS X 32BITS SDRAM
是否Rohs认证 符合 - 符合 符合 符合 符合
零件包装代码 TSOP2 - TSOP2 TSOP2 TSOP2 TSOP2
包装说明 TSSOP, TSSOP86,.46,20 - TSSOP, TSSOP86,.46,20 TSSOP, TSSOP86,.46,20 TSSOP, TSSOP86,.46,20 TSSOP, TSSOP86,.46,20
针数 86 - 86 86 86 86
Reach Compliance Code unknow - compli unknow compli compli
ECCN代码 EAR99 - EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 5 ns - 4.5 ns 5 ns 5 ns 5.5 ns
其他特性 AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 166 MHz - 200 MHz 166 MHz 166 MHz 143 MHz
I/O 类型 COMMON - COMMON COMMON COMMON COMMON
交错的突发长度 1,2,4,8 - 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 代码 R-PDSO-G86 - R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86
长度 22.22 mm - 22.22 mm 22.22 mm 22.22 mm 22.22 mm
内存密度 67108864 bi - 67108864 bi 67108864 bi 67108864 bi 67108864 bi
内存集成电路类型 DDR DRAM - DDR DRAM DDR DRAM DDR DRAM DDR DRAM
内存宽度 32 - 32 32 32 32
功能数量 1 - 1 1 1 1
端口数量 1 - 1 1 1 1
端子数量 86 - 86 86 86 86
字数 2097152 words - 2097152 words 2097152 words 2097152 words 2097152 words
字数代码 2000000 - 2000000 2000000 2000000 2000000
工作模式 SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C - 70 °C 70 °C 70 °C 70 °C
组织 2MX32 - 2MX32 2MX32 2MX32 2MX32
输出特性 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP - TSSOP TSSOP TSSOP TSSOP
封装等效代码 TSSOP86,.46,20 - TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH - SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 4096 - 4096 4096 4096 4096
座面最大高度 1.2 mm - 1.2 mm 1.2 mm 1.2 mm 1.2 mm
自我刷新 YES - YES YES YES YES
连续突发长度 1,2,4,8,FP - 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
最大待机电流 0.003 A - 0.003 A 0.003 A 0.003 A 0.003 A
最大压摆率 0.14 mA - 0.15 mA 0.14 mA 0.14 mA 0.13 mA
最大供电电压 (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V - 3 V 3 V 3 V 2.7 V
标称供电电压 (Vsup) 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES - YES YES YES YES
技术 CMOS - CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL - COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING - GULL WING GULL WING GULL WING GULL WING
端子节距 0.5 mm - 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 DUAL - DUAL DUAL DUAL DUAL
宽度 10.16 mm - 10.16 mm 10.16 mm 10.16 mm 10.16 mm
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