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WEDPN16M64VR-125BI

Synchronous DRAM Module, 16MX64, 5.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219

器件类别:存储    存储   

厂商名称:White Electronic Designs Corporation

厂商官网:http://www.wedc.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
White Electronic Designs Corporation
包装说明
BGA, BGA219,16X16,50
Reach Compliance Code
unknown
访问模式
FOUR BANK PAGE BURST
最长访问时间
5.8 ns
其他特性
AUTO/SELF REFRESH
备用内存宽度
32
最大时钟频率 (fCLK)
125 MHz
I/O 类型
COMMON
JESD-30 代码
R-PBGA-B219
长度
32 mm
内存密度
1073741824 bit
内存集成电路类型
SYNCHRONOUS DRAM MODULE
内存宽度
64
功能数量
1
端口数量
1
端子数量
219
字数
16777216 words
字数代码
16000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
16MX64
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装等效代码
BGA219,16X16,50
封装形状
RECTANGULAR
封装形式
GRID ARRAY
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
刷新周期
8192
座面最大高度
2.2 mm
自我刷新
YES
最大待机电流
0.24 A
最大压摆率
0.75 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
1.27 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
25 mm
参数对比
与WEDPN16M64VR-125BI相近的元器件有:WEDPN16M64VR-100BC、WEDPN16M64VR-125BM、WEDPN16M64VR-125BC、WEDPN16M64VR-100BI、WEDPN16M64VR-66BI、WEDPN16M64VR-66BM、WEDPN16M64VR-133BC、WEDPN16M64VR-133BI、WEDPN16M64VR-100BM。描述及对比如下:
型号 WEDPN16M64VR-125BI WEDPN16M64VR-100BC WEDPN16M64VR-125BM WEDPN16M64VR-125BC WEDPN16M64VR-100BI WEDPN16M64VR-66BI WEDPN16M64VR-66BM WEDPN16M64VR-133BC WEDPN16M64VR-133BI WEDPN16M64VR-100BM
描述 Synchronous DRAM Module, 16MX64, 5.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 Synchronous DRAM Module, 16MX64, 5.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 Synchronous DRAM Module, 16MX64, 5.8ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 Synchronous DRAM Module, 16MX64, 7.5ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 Synchronous DRAM Module, 16MX64, 7.5ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219 Synchronous DRAM Module, 16MX64, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation White Electronic Designs Corporation
包装说明 BGA, BGA219,16X16,50 BGA, BGA219,16X16,50 32 X 25 MM, PLASTIC, BGA-219 BGA, BGA219,16X16,50 BGA, BGA219,16X16,50 BGA, BGA219,16X16,50 32 X 25 MM, PLASTIC, BGA-219 BGA, BGA219,16X16,50 BGA, BGA219,16X16,50 32 X 25 MM, PLASTIC, BGA-219
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknow unknow unknown
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 5.8 ns 6 ns 5.8 ns 5.8 ns 6 ns 7.5 ns 7.5 ns 5.4 ns 5.4 ns 6 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO REFRESH
备用内存宽度 32 32 32 32 32 32 32 32 32 32
最大时钟频率 (fCLK) 125 MHz 100 MHz 125 MHz 125 MHz 100 MHz 66 MHz 66 MHz 133 MHz 133 MHz 100 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219 R-PBGA-B219
长度 32 mm 32 mm 32 mm 32 mm 32 mm 32 mm 32 mm 32 mm 32 mm 32 mm
内存密度 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bi 1073741824 bi 1073741824 bit
内存集成电路类型 SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
内存宽度 64 64 64 64 64 64 64 64 64 64
功能数量 1 1 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1 1 1
端子数量 219 219 219 219 219 219 219 219 219 219
字数 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words
字数代码 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000 16000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 70 °C 125 °C 70 °C 85 °C 85 °C 125 °C 70 °C 85 °C 125 °C
最低工作温度 -40 °C - -55 °C - -40 °C -40 °C -55 °C - -40 °C -55 °C
组织 16MX64 16MX64 16MX64 16MX64 16MX64 16MX64 16MX64 16MX64 16MX64 16MX64
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 BGA BGA BGA BGA BGA BGA BGA BGA BGA BGA
封装等效代码 BGA219,16X16,50 BGA219,16X16,50 BGA219,16X16,50 BGA219,16X16,50 BGA219,16X16,50 BGA219,16X16,50 BGA219,16X16,50 BGA219,16X16,50 BGA219,16X16,50 BGA219,16X16,50
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 8192 8192 8192 8192 8192 8192 8192 8192 8192 8192
座面最大高度 2.2 mm 2.2 mm 2.2 mm 2.2 mm 2.2 mm 2.2 mm 2.2 mm 2.2 mm 2.2 mm 2.2 mm
最大待机电流 0.24 A 0.24 A 0.24 A 0.24 A 0.24 A 0.24 A 0.24 A 0.24 A 0.24 A 0.24 A
最大压摆率 0.75 mA 0.75 mA 0.75 mA 0.75 mA 0.75 mA 0.75 mA 0.75 mA 0.75 mA 0.75 mA 0.75 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL MILITARY COMMERCIAL INDUSTRIAL INDUSTRIAL MILITARY COMMERCIAL INDUSTRIAL MILITARY
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL BALL BALL
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 25 mm 25 mm 25 mm 25 mm 25 mm 25 mm 25 mm 25 mm 25 mm 25 mm
自我刷新 YES YES - YES YES YES - YES YES -
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