Temperature Compensated Crystal Oscillator (VC-TCXO)
Data sheet
MODEL
：
TG5032CAN 40.000000MHz CHGNDA
Product. No.
：
X1G0044310104xx
Please refer to the 10.Packing information about xx (last 2 digits)
SEIKO EPSON CORPORATION
Pb free.
Complies with EU RoHS directive.
*About the products without the Pb-free mark.
Contains Pb in products exempted by EU RoHS directive.
(Contains Pb in sealing glass, high melting temperature type solder or other.)
INTRODUCTION
1. Any part of this material may not be reproduced or duplicated in any form or any means without the
written permission of Seiko Epson.
2. This sheet is not intended to guarantee or provide an approval of implementation of industrial patents.
[ 1 ] Characteristics
· Package size (5.0 mm×3.2 mm×1.45 mm)
· Ultra high stability VC-TCXO
· Output waveform : CMOS
· Reference weight Typ.75mg
[ 2 ] Absolute maximum ratings
Parameter
Symbol
Vcc-GND
Vc-GND
T_stg
Supply voltage
Frequency control voltage
Storage temperature range
Min.
-0.6
-0.6
-40
Specifications
Typ.
Max.
-
+6.0
-
Vcc+0.6
-
+90
Unit
V
V
°C
Conditions
-
Vc terminal
Storage as single product.
[ 3 ] Recommended operating conditions
Parameter
Symbol
Vcc
GND
Vc
T_use
Load_C
Supply voltage
Frequency control voltage
Operating temperature range
Output load
Min.
3.135
0
0.5
-40
13.5
Specifications
Typ.
3.3
-
1.5
-
15
Max.
3.465
0
2.5
+85
16.5
Unit
V
V
V
°C
pF
Conditions
-
-
Vc=1.5 +/-1.0V
-
-
[ 4 ] Frequency characteristics
( 1 ) Frequency characteristics
Parameter
(Vcc=3.3 V, GND=0.0 V, Vc=1.5 V, Load=15 pF, T_use=+25°C)
Symbol
fo
f_tol
fo-Tc
fo-Load
fo-Vcc
Output Frequency
Frequency tolerance *1
Frequency / temperature
characteristics
Frequency / load coefficient
Frequency / voltage coefficient
Min.
-
-2.0
-0.25
Specifications
Typ.
40
-
-
Max.
-
+2.0
+0.25
Unit
MHz
x10⁻⁶
x10⁻⁶
x10⁻⁶
x10⁻⁶
x10⁻⁶
x10⁻⁶
Conditions
-
T_use=+25°C+/-2°C
After 2 reflows *2
T_use=-40°C to +85°C
(Reference to +25°C)
Load +/- 10%
Vcc +/-5%
T_use = +25ºC, 24 hours *3
T_use = +25ºC 1 year
-0.1
-
+0.1
-0.1
-
+0.1
-0.02
-
+0.02
Frequency aging
f_age
-1.0
-
+1.0
*1 Include initial frequency tolerance and frequency deviation after reflow cycles.
*2 Measured in the elapse of 24 hours after reflow soldering.
*3 After 48 hours of continuous operation
2
( 2 ) Frequency control characteristics
Parameter
(Vcc=3.3 V, GND=0.0 V, Vc=1.5 V, Load=15 pF, T_use=+25°C)
Symbol
f_cont
Zin
-
Frequency control range
Input impedance
Frequency change polarity
Min.
-10.0
+5.0
100
Specifications
Typ.
Max.
-
-5.0
-
+10.0
-
-
Positive polarity
Unit
x10⁻⁶
x10⁻⁶
kΩ
-
Conditions
Vc=0.5V
Vc=2.5V
Vc=1.5V
-
[ 5 ] Electrical characteristics
Parameter
(Vcc=3.3 V, GND=0.0 V, Vc=1.5 V, Load=15 pF, T_use=+25°C)
Symbol
Icc
Voʜ
Voʟ
tr
tf
SYM
Current consumption
High level output voltage
Low level output voltage
Rise time
Fall time
Symmetry
Phase noise
L(f)
Specifications
Min.
Typ.
Max.
-
-
6.0
90%Vcc
-
-
-
-
10%Vcc
-
-
8.0
-
-
8.0
45
-
55
-
-59
-
-
-87
-
-
-111
-
-
-132
-
-
-150
-
-
-155
-
-
-156
-
Unit
mA
V
V
ns
ns
%
Conditions
Vcc=3.3V
-
-
10% Vcc to 90% Vcc level
90% Vcc to 10% Vcc level
50 % Vcc Level
1Hz offset
10Hz offset
100Hz offset
dBc/Hz
1kHz offset
10kHz offset
100kHz offset
1MHz offset
3
[ 6 ] Test circuit
1) Output Load : Load_C = 15 pF
Test Point
Vcc
Supply
Voltage
By-pass
Capacitor
0.1
F
Vc
OUT
GND
Load_C
Control
Voltage
2) Current consumption
A
Supply
Voltage
By-pass
Capacitor
0.1
F
Vcc
Vc
OUT
GND
Load_C
Control
Voltage
3) Conditions
1. Oscilloscope: Impedance Min. 1MΩ
Input capacitance Max. 10 pF
Band width Min. 300 MHz
Impossible to measure both frequency and wave form at the same time.
(In case of using oscilloscope's amplifier output, possible to measure both at the same time.)
2. Load_C includes probe capacitance.
3. A capacitor (By-pass:0.1 μF) is placed between Vcc and GND,and closely to TCXO.
4. Use the current meter whose internal impedance value is small.
5. Power Supply
Impedance of power supply should be as low as possible.
6. GND pin should be connected to low impedance GND.
4
[ 7 ] Outline drawing unit:mm
[ 8 ] Recommended foot print unit:mm
Please set By-pass capacitor
(0.1μF) near the Vcc pad
#9
#8
#7
To GND
#6
#9
#8
1.35
0.70
1.35
#6
#7
#10
#5
#1
#2
#3
5.00±0.2
#4
0.30
#1
#2
1.20 #3
2.50
#4
Pin #
Connection
#1
#2
#3
#4
#10
#5
0.60
1.20
#9
#8
#7
#6
0.60
0.90
1.20
1
2
3
4
5
6
7
8
9
10
Vc
N.C.
N.C.
GND
N.C.
OUT
N.C.
N.C.
Vcc
N.C.
1.45±0.2
0.30
0.15
Do not connect “N.C.” pin with
any other leads (also mutually)
To maintain stable operation, provide
a 0.1 μF by-pass capacitor at a
location as near as possible to the power
source terminal of the crystal product
(between Vcc - GND).
Material
Ceramics(Cavity)
Au plated nickel(Electric terminal)
Fe-Ni-Co(Lid)
[ 9 ] Reflow profile
Temperature[C]
300
250
200
150
100
50
Time
+25CtoPeak
0
60
120 180 240 300 360 420 480 540 600 660 720 780
Time[s]
;+217C
Tsmax;+200C
TL
TP
;+260C
+255C
Avg.
Ramp-up
3
C/sMax.
tp
;20sto40s
tL
60sto150s
(+217Cover)
Ramp-down
6C/sMax.
Tsmin;+150C
ts
60sto180s
(+150Cto+200C)
5
0.70
#10
#5
3.20±0.2
0.15
1.30 1.00
嵌入式系统
