Temperature Compensated Crystal Oscillator (TCXO)
Data sheet
MODEL
：
TG5032CBN 30.720000MHz CBGHNA
Product. No.
：
X1G0045710096xx
Please refer to the 11.Packing information about xx (last 2 digits)
SEIKO EPSON CORPORATION
Pb free.
Complies with EU RoHS directive.
*About the products without the Pb-free mark.
Contains Pb in products exempted by EU RoHS directive.
(Contains Pb in sealing glass, high melting temperature type solder or other.)
INTRODUCTION
1. Any part of this material may not be reproduced or duplicated in any form or any means without the
written permission of Seiko Epson.
2. This sheet is not intended to guarantee or provide an approval of implementation of industrial patents.
[ 1 ] Characteristics
· Package size (5.0 mm×3.2 mm×1.45 mm)
· Ultra high stability TCXO
· Output waveform : CMOS
· Reference weight Typ.72mg
[ 2 ] Absolute maximum ratings
Parameter
Symbol
Vcc-GND
T_stg
Supply voltage
Storage temperature range
Min.
-0.6
-40
Specifications
Typ.
-
-
Max.
+6.0
+90
Unit
V
°C
Conditions
-
Storage as single product.
[ 3 ] Recommended operating conditions
Parameter
Symbol
Vcc
GND
T_use
Load_C
Supply voltage
Operating temperature range
Output load
Min.
3.135
0
-40
13.5
Specifications
Typ.
3.3
-
-
15
Max.
3.465
0
+85
16.5
Unit
V
V
°C
pF
Conditions
-
-
-
-
[ 4 ] Frequency characteristics
Parameter
(Vcc=3.3 V, GND=0.0 V, Load=15 pF, T_use=+25°C)
Symbol
fo
f_tol
fo-Tc
fo-Load
fo-Vcc
f_age
-
-
Output Frequency
Frequency tolerance *1
Frequency / temperature
characteristics
Frequency / load coefficient
Frequency / voltage coefficient
Frequency aging
Holdover stability,
constant temperature
Holdover stability,
constant temperature
Min.
-
-1.0
-0.28
-0.1
-0.1
-0.5
-3.0
-0.01
-0.04
Specifications
Typ.
30.72
-
-
-
-
-
-
-
-
Max.
-
+1.0
+0.28
+0.1
+0.1
+0.5
+3.0
+0.01
+0.04
Unit
MHz
x10⁻⁶
x10⁻⁶
x10⁻⁶
x10⁻⁶
x10⁻⁶
x10⁻⁶
x10⁻⁶
x10⁻⁶
Conditions
-
T_use=+25°C+/-2°C
After 2 reflows *2
T_use=-40°C to +85°C
(Reference to +25°C)
Load +/- 10%
Vcc +/-5%
T_use = +25ºC first year
T_use = +25ºC 20 years
T_use=+25 °C, 24 hours
(after 10 days of continuous
operation)
T_use=+25 °C, 24 hours
(after 48 hours of continuous
operation)
Holdover stability
*3
-
-4.6
-
+4.6
x10⁻⁶
(Free-run accuracy)
*1 Include initial frequency tolerance and frequency deviation after reflow cycles.
*2 Measured in the elapse of 24 hours after reflow soldering.
*3 This includes initial frequency tolerance, frequency / temperature characteristics, frequency / load coefficient,
frequency/voltage coefficient and frequency aging (+25°C, 20 years) .
2
[ 5 ] Electrical characteristics
Parameter
(Vcc=3.3 V, GND=0.0 V, Load=15 pF, T_use=+25°C)
Symbol
Icc
Voʜ
Voʟ
tr
tf
SYM
Current consumption
High level output voltage
Low level output voltage
Rise time
Fall time
Symmetry
Phase noise
L(f)
Specifications
Min.
Typ.
Max.
-
-
6.0
90%Vcc
-
-
-
-
10%Vcc
-
-
8.0
-
-
8.0
45
-
55
-
-64
-
-
-91
-
-
-115
-
-
-136
-
-
-151
-
-
-155
-
-
-156
-
Unit
mA
V
V
ns
ns
%
Conditions
Vcc=3.3V
-
-
10% Vcc to 90% Vcc level
90% Vcc to 10% Vcc level
50 % Vcc Level
1Hz offset
10Hz offset
100Hz offset
dBc/Hz
1kHz offset
10kHz offset
100kHz offset
1MHz offset
[ 6 ] Enable/disable function
Parameter
Symbol
Vɪʜ
Vɪʟ
-
-
Enable voltage
Disable voltage
Input impedance
Output resistance of disable
Specifications
Min.
Typ.
Max.
70%Vcc
-
Vcc
0
-
30%Vcc
50
-
-
High impedance
Unit
V
V
kΩ
-
Conditions
OE terminal (Enable voltage)
OE terminal (Disable voltage)
Vcc=3.3V
OE input level
“H” or “Open”
“L”
Oscillation
Enable
Enable
Outputs
Enable : specified frequency
Disable : high impedance
* OE input voltage must be lower than Vcc. Note that rise-up time of
OE input voltage must not be shorter than the rise-up time of supply voltage.
OE
V
IL
V
Disable
IH
Enable
high impedance
3
[ 7 ] Test circuit
1) Output Load : Load_C = 15 pF
Test Point
Vcc
Supply
Voltage
By-pass
Capacitor
0.1
F
N.C.
OUT
GND
Load_C
2) Current consumption
A
Supply
Voltage
By-pass
Capacitor
0.1
F
Vcc
N.C.
OUT
GND
Load_C
3) Conditions
1. Oscilloscope: Impedance Min. 1MΩ
Input capacitance Max. 10 pF
Band width Min. 300 MHz
Impossible to measure both frequency and wave form at the same time.
(In case of using oscilloscope's amplifier output, possible to measure both at the same time.)
2. Load_C includes probe capacitance.
3. A capacitor (By-pass:0.1 μF) is placed between Vcc and GND,and closely to TCXO.
4. Use the current meter whose internal impedance value is small.
5. Power Supply
Impedance of power supply should be as low as possible.
6. GND pin should be connected to low impedance GND.
4
[ 8 ] Outline drawing unit:mm
[ 9 ] Recommended foot print unit:mm
Please set By-pass capacitor
(0.1μF) near the Vcc pad
#9
#8
#7
To GND
#6
#9
#8
1.35
0.70
1.35
#6
#7
#10
#5
#1
#2
#3
5.00±0.2
#4
0.30
#1
#2
1.20 #3
2.50
#4
Pin #
Connection
#1
#2
#3
#4
#10
#5
0.60
1.20
#9
#8
#7
#6
0.60
0.90
1.20
1
2
3
4
5
6
7
8
9
10
N.C.
N.C.
OE
GND
N.C.
OUT
N.C.
N.C.
Vcc
N.C.
1.45±0.2
0.30
0.15
Do not connect “N.C.” pin with
any other leads (also mutually)
To maintain stable operation, provide
a 0.1 μF by-pass capacitor at a
location as near as possible to the power
source terminal of the crystal product
(between Vcc - GND).
If OE Function does not use,
We recommended connecting
OE(#3pin) to Vcc(#9pin).
Material
Ceramics(Cavity)
Au plated nickel(Electric terminal)
Fe-Ni-Co(Lid)
[ 10 ] Reflow profile
Temperature[C]
300
250
200
150
100
50
Time
+25CtoPeak
0
60
;+217C
Tsmax;+200C
TL
TP
;+260C
+255C
Avg.
Ramp-up
3
C/sMax.
tp
;20sto40s
tL
60sto150s
(+217Cover)
Ramp-down
6C/sMax.
Tsmin;+150C
ts
60sto180s
(+150Cto+200C)
120 180 240 300 360 420 480 540 600 660 720 780
Time[s]
5
0.70
#10
#5
3.20±0.2
0.15
1.30 1.00
